A5073361611- 2D Materials and Applications
- Graphene research and applications
- Molecular Junctions and Nanostructures
- Carbon Nanotubes in Composites
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Force Microscopy Techniques and Applications
- Mechanical and Optical Resonators
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Electronic Packaging and Soldering Technologies
- Photocathodes and Microchannel Plates
- Electrocatalysts for Energy Conversion
- Nanomaterials for catalytic reactions
- Semiconductor Lasers and Optical Devices
- Graphene and Nanomaterials Applications
- Advanced Surface Polishing Techniques
- Topological Materials and Phenomena
- Perovskite Materials and Applications
- Interconnection Networks and Systems
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor materials and interfaces
IMEC
2024
SUNY Polytechnic Institute
2016-2019
National Institute of Technology Calicut
2011
Abstract Metal–semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of junction pinning metal Fermi energy. Here, a graphene–WSe 2 p‐type junction, which exhibits lack level pinning, is studied. The displays near‐ideal diode with large gate tunability small leakage currents. Using electrostatically coupled to WSe channel tune barrier height, Schottky–Mott limit probed in single...
In the development of semiconductor devices, bipolar junction transistor (BJT) features prominently as being first solid state that helped to usher in digital revolution. For any new semiconductor, therefore, fabrication and characterization BJT are important for both technological importance historical significance. Here, we demonstrate a device exfoliated TMD WSe2. We use buried gates electrostatically create doped regions with back-to-back p–n junctions. two central characteristics...
Abstract We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension Natori’s and includes transmission probability drain-channel coupling parameter. latter parameter gives rise theoretical R ON significantly larger than those predicted previously. To validate our fabricated n-channel MOSFETs with varying channel lengths. length dependence these...
Electron microscopes have been improved to achieve ever smaller beam spots, a key parameter that determines the instrument's resolution. The techniques measure size of beam, however, not progressed same degree. There is an on-going need develop detection technologies can potentially characterize smallest electron further improve capabilities these instruments. We report on new detector based single-walled carbon nanotube. Nanotubes are atomically smooth, well-defined diameter similar in...
The three pillars of semiconductor device technologies are (1) the p-n diode, (2) metal-oxide-semiconductor field-effect transistor and (3) bipolar junction transistor. They have enabled unprecedented growth in field information technology that we see today. Until recently, technological revolution for better, faster more efficient devices has been governed by scaling down dimensions following Moore's Law. With slowing law, there is a need alternative materials computing can continue...
In this paper, direct die-to-wafer (D2W) hybrid bonding flow is explored using plasma diced dies with bond pad pitch scaling down to 2 μm. All the die preparation steps (including backside thinning, dicing, surface activation, and pick-and-place) are proposed demonstrated on carrier wafers minimize defects at of enable thin handling capability. With flexible shape design (chamfered corners) can be realized, inspection results show well-defined edge clean sidewall. Good Kelvin daisy chain...
We examine total ionizing dose effects in devices that can reconfigure into both n- and p-channel MOSFETs. The are fabricated using 2-D transition metal dichalcogenide semiconductor WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> allow better insight radiation than unipolar devices. central feature of the device is use buried gates to create p-type doping. Since doping not fixed, we dynamically achieve different polarity In addition,...
We describe measurements of diode leakage currents in p-n and p-i-n diodes formed along individual single-walled carbon nanotubes (SWNTs) the ranges well below direct detection limit. When cooled, these exhibit down range 10−25 A or equivalent to 1 electron/19 days. To verify our measurement such low currents, we use photovoltaic property under varying temperatures extract dark currents. Since are sensitive near IR spectrum, show promise as zero current noise, near-infrared detectors.
In this paper, the development of 3D superconducting (SC) interconnects including SC microbumps, through silicon vias (TSVs) and pads on 300mm Si wafers for quantum computing application is reported. particular, indium plating different layers, D2W TCB stacking based room temperature (RT) electrical test failure analysis stacked samples, critical (Tc) tests conformality layers depositions inside high aspect ratio TSVs, hollow TSV Cu filled process flows, RT PVD α-Ta layer CMP full thickness...
For many years, metal–semiconductor interfaces have suffered from defective interfaces, causing their energy band alignment to diverge the Schottky–Mott rule. The van der Waals interface between graphene and transition metal dichalcogenide WSe2 takes rule textbook laboratory. Because of lack Fermi-level pinning, in article number 1901392, Samuel W. LaGasse, Ji Ung Lee, co-workers achieve perfect tuning graphene–WSe2 Schottky barrier.
Though many technologies exist for improving solar cell efficiencies, there remains an unexplored fundamental parameter, the diode ideality factor (n), that we can exploit. The Shockley–Queisser limit states maximum conversion efficiency in a single p–n junction is achievable only when it operated ideal of n = 1. Generation and recombination losses correlate directly to increase dark saturation current n, both which have competing effects on open-circuit voltage. Here, demonstrate new...
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of junction pinning metal Fermi energy. We report measurements on a boron nitride encapsulated graphene-tungsten diselenide (WSe$_2$) which exhibits ideal diode complete lack Fermi-level pinning. The barrier height device is rigidly tuned electrostatic gating WSe$_2$, enabling experimental verification Schottky-Mott limit...
We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension (J. Appl. Phys. 76, 4879 (1994)) and includes transmission probability drain-channel coupling capacitor. latter parameter gives rise theoretical RON significantly larger than those predicted previously. To validate our fabricated n-channel MOSFETs with varying channel lengths. length...