Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki; Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping. Appl. Phys. Lett. 23 July 2012; 101 (4): 043501. https://doi.org/10.1063/1.4737876 Download citation file: Ris (Zotero) Reference Manager EasyBib...

To produce nitrogen-free synthesis gas or hydrogen by the partial oxidation of methane using air as an oxidant, NiO−Cr2O3−MgO complex oxide was proposed effective one. Lattice oxygen NiO in effectively transferred to CH4 give H2 and CO ratio 2−3:1 at 700 °C. reduced metallic Ni during course reaction with CH4, successfully oxidized Repeated cycles were carried out without any loss activity. The role Cr2O3 seemed weaken Ni−O bond NiO−MgO oxide, which is less reducible In addition, surface...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTNickel-catalyzed reactions involving strained .sigma. bonds. II. Nickel(0)-catalyzed reaction of bicyclo[1.1.0] butanes with olefinsR. Noyori, T. Suzuki, Y. Kumagai, and H. TakayaCite this: J. Am. Chem. Soc. 1971, 93, 22, 5894–5896Publication Date (Print):November 1, 1971Publication History Published online1 May 2002Published inissue 1 November 1971https://doi.org/10.1021/ja00751a053RIGHTS & PERMISSIONSArticle Views218Altmetric-Citations32LEARN...

A <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> -band millimeter-wave transmitter and receiver that are based on impulse radio (IR) architecture were developed. The IR-based apparatuses have an optical-fiber input/output interface board supports multi protocol signals (OC-192 10 GbE) implements a forward error correction (FEC), enabling 10-Gb/s data transmission both in space fiber seamlessly. Analyzing model with simple on/off...

Using GaAs/AlGaAs/InAs/AlGaAs/GaAs tunneling diodes, we have investigated the resonant current through InAs wetting layers and self-assembled quantum dots obtained from Stranski-Krastanow growth mode. For both with without dots, two-dimensional (2D) electronic states in is observed. From this observation, can determine 2D ground state energy. On other hand, peaks due to three-dimensional (3D) emitter zero-dimensional (0D) are observed only for case of an layer dots.

A small spherical stepping motor with two degrees of freedom is developed. The composed sub motors. Each submotor the two-phase permanent-magnet bipolar linear type and shape semi-circle. rotational axes submotors cross at same point, this structure enables developed to move in any direction. size 75/spl times/75/spl times/68 mm. positioning resolutions inner outer are 0.01deg 0.03deg respectively holding torques 0.2Nm 0.03Nm respectively. feature torque high resolution suitable apply it...

The authors have developed a highly uniform, InP-based high-electron-mobility transistor (HEMT) technology for high-speed optical communication system integrated circuits (ICs). Special attention was paid to obtaining high yield and uniformity without degrading the high-frequency characteristics of these HEMTs. An InP etch-stopper layer employed control gate recess etching. successfully fabricated InAlAs-InGaAs HEMTs with cutoff frequency 175 GHz after interconnection, which is sufficiently...

High-efficiency Schottky-barrier solar cells with a metal-insulator semiconductor structure have been fabricated on p-type InP. The open-circuit voltage and the energy conversion efficiency can be increased by introducing thin oxide layer between metal semiconductor. are 0.78 V 14.5% under AM2 conditions.

Oxide layers prepared with bromine water are found to increase the barrier height for Au-InP Schottky diodes. Electrical characteristics measured and relationships between preparation conditions diode parameters examined. The typical value of ideality factor 0.83 eV 1.1, respectively. Some instabilities observed in characteristics.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTNickel-catalyzed reactions involving strained bonds. 17. Nickel(0)-catalyzed of bicyclo[1.1.0]butanes. Geminal two-bond cleavage reaction and the stereospecific olefin trapping carbenoid intermediateH. Takaya, T. Suzuki, Y. Kumagai, M. Hosoya, H. Kawauchi, R. NoyoriCite this: J. Org. Chem. 1981, 46, 14, 2854–2861Publication Date (Print):July 1, 1981Publication History Published online1 May 2002Published inissue 1 July...

We investigated transparent oxide thin-film transistors (TFTs) using n-(In 2 O 3 ) 0.9 (SnO 0.1 /InGaZnO 4 (n-ITO/IGZO) modulation-doped heterostructures, which are effective in achieving high carrier mobilities. From transmittance measurements and UV photoemission spectroscopy, n-ITO/IGZO heterostructures expected to realize the type-II energy band lineup, both conduction minimum valence maximum of n-ITO higher than those IGZO. Van der Pauw Hall revealed mobility enhancement two-dimensional...

A wavelet generator (WG) based on simple ultra-wideband impulse radio (UWB-IR) architecture has been developed to use for multi-gigabit communications systems that utilize the W-band millimeter wave (75–110 GHz). The WG radiates a pulse signal, or wavelet, whose full width at half maximum is less than 80 ps, which makes it possible realize 12.5-Gb/s ON/OFF keying transmitter. consists of only two components: (PG) and band pass filter (BPF). digital-based PG was fabricated by using 0.13-μm...

Nonlinear response in photoelectron emission from alkali antimonides, such as ${\mathrm{Cs}}_{3}$Sb and ${\mathrm{K}}_{3}$Sb, under intense laser irradiation was observed directly. The photocurrent proportional to the incident power at lower intensity, but it showed quadratic higher intensity. Energy distribution of emitted electrons region coincided for most part with that excited by natural light a wavelength half laser. These results seem present experimental evidence double-photon...

We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$k$</tex></formula> ) oxynitride Notation="TeX">$\hbox{TaO}_{x}\hbox{N}_{y}$</tex></formula> gate dielectric Notation="TeX">$(k \sim\!\hbox{24})$</tex></formula> obtained by sputtering deposition. The MIS-HEMTs show...

This paper describes a new preamplifier IC with 0,15-/spl mu/m gate InP-based high electron mobility transistors (HEMTs) for high-speed fiber optic communication system. The consists of lumped-element transimpedance amplifier (TIA) the input stage and highly stabilized distributed cascode-configured unit cells gain stage. A gain-peaking technique was employed to enhance bandwidth flatness preamplifier. peaking profile compensates lack TIA. As result, we achieved flat 52 dB/spl Omega/ 49 GHz.

The positioning accuracy, output torque, and the trajectory tracing property of developed spherical stepping motor are tested. is composed two arc-shaped submotors a rotational submotor. center each submotor identical. following characteristics derived from experimental results. resolutions inner, middle, outer 0.00781[deg], 0.00586[deg] respectively. holding torques 0.093[Nm], 0.38[Nm] 2.06[Nm] It can trace along circle radiation within 0.2[deg] error, star 0.4[deg] error. In comparison...

144-Gbit/s operation of a selector circuit and 100-Gbit/s 4:1 multiplexer (MUX) using 0.10/spl mu/m InP HEMT technology were achieved. To increase the timing margin while reducing power consumption, two-phase lock architecture was used for MUX. In addition, to align between data clock, critical issue at high bit-rate, Gilbert-cell-type delay buffer applied clock tree precisely compensate gate in blocks. We also tested maximum speed core MUX, circuit, achieving operation. As far as we know,...

We investigated the spin-splitting in an almost strain-free ${\text{In}}_{0.89}{\text{Ga}}_{0.11}{\text{Sb/In}}_{0.88}{\text{Al}}_{0.12}\text{Sb}$ two-dimensional electron gas (2DEG) by magnetoresistance measurements at 1.5 K. A large effective gyromagnetic factor ($g$ factor) $|{g}^{\ensuremath{\ast}}|=33--34$ was obtained means of coincidence method, which assumes mass ${m}^{\ensuremath{\ast}}=0.021{m}_{0}$ Fermi energy. In spite $g$ and high mobility...

We have investigated insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor (MIS) devices with Al2O3 or AlTiO (an alloy of and TiO2) gate dielectrics obtained by atomic layer deposition on AlGaN. Analyzing insulator-thickness dependences threshold voltages for the MIS devices, we evaluated positive charges, whose density at AlTiO/AlGaN is significantly lower than that Al2O3/AlGaN interface. This a higher dielectric constant lead to rather shallower Al2O3....

This paper describes a series of fire experiments in 0.9m by 0.6m 0.4m high compartment. A single rectangular opening is set for the ventilation with factors (AH0.5 ) ranging from 0.02 m5/2 to 0.10 m5/2. Propane gas and three kinds solid fuel (wood crib, PMMA polyurethane flexible foam) are used as fuels. Mass loss rates measured net heat release estimated furniture calorimeter examine combustion efficiency, which effects ejected flame formation. Results indicate that efficiency depends on...

This paper describes a full-rate-clock 4:1 multiplexer (MUX) in 0.13-/spl mu/m InP-based HEMT technology for 40-Gb/s and above optical fiber link systems. To reduce output jitter, the serialized data are retimed at final stage by retimer, D-type flip-flop, which has symmetric layout with an optimized spacing to ground that minimizes coupling capacitances. A phase adjuster, composed of exclusive OR delay switch, uses external control signals change each clock entering retimer gives correct...