Determining the state of a qubit on time scale much shorter than its relaxation is an essential requirement for quantum information processing. With aid nondegenerate parametric amplifier, we demonstrate continuous detection jumps transmon with $90\mathrm{%}$ fidelity discrimination. Entirely fabricated by standard two-step optical-lithography techniques, this type amplifier consists dispersion-engineered Josephson-junction (JJ) array. By using long arrays, containing...

Spin-dependent transport properties of Mn2RuxGa thin-films are studied as function the Ru concentration and substrate-induced strain. The large spontaneous Hall angle 7.7% twenty times bigger than in other 3d metals is a signature its half-metallicity. compensation temperature where magnetization two inequivalent antiferromagnetically coupled Mn sublattices cancel can be tuned by varying x or biaxial This zero-moment half metal free from demagnetizing forces creates no stray field,...

Tunnel magnetoresistance ratios of up to 40% are measured between 10 K and 300 when the highly spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature bias dependences effect, with a sign change near −0.2 V, reflect structure Mn2RuxGa interface density states. Despite moment vanishing at compensation temperature 200 for x≈0.8, ratio remains non-zero throughout region, demonstrating that spin-transport governed by one...

The Heusler compound Mn2RuxGa (MRG) may well be the first compensated half metal. Here, structural, magnetic and transport properties of thin films MRG are discussed. There is evidence half-metallicity up to x = 0.7, compensation two Mn sublattice moments observed at specific compositions temperatures, leading a zero-moment potential benefits for using such with perpendicular anisotropy spin-torque tunnel junctions oscillators, as low critical current, high magnetoresistance ratio,...

Abstract Ionic liquid gating is a versatile method for inducing metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping metal oxide films under debate. WO 3 film-based field effect discussed this report. Flat and relatively smooth were deposited on SrTiO substrates by pulsed laser deposition. Swept constant gate voltage characteristics are measured both argon oxygen atmospheres. results show clear dependence the pressure experimental chamber....

Magnetotransport is investigated in thin films of the half-metallic ferrimagnet ${\mathrm{Mn}}_{2}{\mathrm{Ru}}_{x}\mathrm{Ga}$ pulsed magnetic fields up to 58 T. A nonvanishing Hall signal observed over a broad temperature range, spanning compensation (155 K), where net moment strictly zero, anomalous conductivity $6673\phantom{\rule{0.28em}{0ex}}{\mathrm{\ensuremath{\Omega}}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{m}}^{\ensuremath{-}1}$, and coercivity exceeds...

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to helical spin-polarization these states, proximity topological matter nearby superconductor predicted induce unconventional superconductivity and, thus, host Majorana physics. We report on preparation and characterization Nb-based superconducting quantum interference devices patterned top insulator SnTe thin films. The...

Ferrimagnetic ${\mathrm{Mn}}_{2}{\mathrm{Fe}}_{x}\mathrm{Ga}\phantom{\rule{4pt}{0ex}}(0.26\ensuremath{\le}x\ensuremath{\le}1.12)$ thin films have been characterized by x-ray diffraction, magnetometry, absorption spectroscopy, magnetic circular dichroism, and M\"ossbauer spectroscopy with the aim of determining structure site-specific magnetism this tetragonal, $\mathrm{D}{0}_{22}$-structure Heusler compound. High-quality epitaxial low root-mean-square surface roughness...

The high kinetic inductance offered by granular aluminum (grAl) has recently been employed for linear inductors in superconducting high-impedance qubits and detectors. Due to its large critical current density compared typical Josephson junctions, resilience external magnetic fields, low dissipation, grAl may also provide a robust source of non-linearity strongly driven quantum circuits, topological superconductivity, hybrid systems. Having said that, can the be sufficient build qubit? Here...

Point contact Andreev reflection spectroscopy is employed to extract the effective Fermi-level spin polarization of three distinct compositions from (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$ topological insulator family. The end members, ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}$, exhibit high 70(4)% 57(3)%, respectively. High-field $({\ensuremath{\mu}}_{0}H=14\phantom{\rule{0.16em}{0ex}}\mathrm{T})$ point shows carrier...

The magneto-optical Kerr effect (MOKE) is often assumed to be proportional the magnetisation of a magnetically ordered metallic sample; in ferrimagnets with chemically distinct sublattices, such as rare-earth transition-metal alloys, it depends on difference between sublattice contributions. Here we show that highly spin polarized, fully compensated ferrimagnet, where sublattices are similar, MOKE observed even when net moment strictly zero. We analyse spectral ellipsometry and Mn 2 Ru x Ga,...

Abstract Superconducting granular aluminum is attracting increasing interest due to its high kinetic inductance and low dissipation, favoring use in particle detectors, superconducting resonators or quantum bits. We perform switching current measurements on DC-SQUIDs, obtained by introducing two identical geometric constrictions rings of various normal-state resistivities the range from ρ n = 250–5550 μ Ω cm. The relative SQUID loop, tens nH, leads a suppression modulation measured versus...

Abstract Due to its negligible spontaneous magnetization, high spin polarization and giant perpendicular magnetic anisotropy, Mn 2 Ru x Ga (MRG) is an ideal candidate as oscillating layer in THz spin-transfer-torque nano-oscillators. Here, the effect of ultrathin Al Ta diffusion barriers between MRG MgO tunnel junctions investigated compared devices with a bare MRG/MgO interface. Both compensation temperature, T comp , electrode tunneling magnetoresistance (TMR) device are highly sensitive...

The effect of vacuum annealing thin films the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. 39.3 nm deposited on (100) MgO substrates exhibit perpendicular magnetic anisotropy due a small 1% tetragonal elongation induced by substrate strain. main change modification in compensation temperature, which first increases 50 K for as-deposited film 185 after Celsius, and then falls 140 Celsius. There are minor changes atomic order,...

A thin Hafnium film is shown to act both as an effective diffusion barrier for manganese at a thickness of 0.7 nm and exchange coupling layer in sandwich structure with perpendicular magnetic anisotropy. The two layers are Co20Fe60B20 the low moment ferrimagnet Mn2RuxGa (MRG). relative orientation changes sign compensation temperature MRG. energy reaches 0.11 mJ m−2 thinnest Hf interlayers. Ruthenium, usual metal choice ferromagnetic heterostructures, cannot be used zero-moment half MRG...

High kinetic inductance materials constitute a valuable resource for superconducting quantum circuits and hybrid architectures. Superconducting granular aluminum (grAl) reaches sheet inductances in the nH/$\square$ range, with proven applicability bits microwave detectors. Here we show that single photon internal quality factor $Q_{\mathrm{i}}$ of grAl resonators exceeds $10^5$ magnetic fields up to 1T, aligned in-plane films. Small perpendicular fields, range 0.5mT, enhance by approximately...

We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The polarization increases monotonically as a function ion fluence. A relatively high 46 % SHA 3.1 are achieved on 40 nm thick irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in trends is observed for low disorder...

Single crystals of the metallically degenerate fully magnetic semiconductors CuCr2Se4 and CuCr2Se3Br have been prepared by Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- platelet-shaped are characterised means high field magnetotransport (μ0H≤ 14 T) Point Contact Andreev Reflection. relatively spin polarisation observed |P|>0.56, together with low minority carrier effective mass 0.25 me,...

The optical properties of InAs/InP multi-layer quantum wire (QWR) structures various spacer thicknesses have been investigated by means room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra revealed transitions assigned to QWR families heights equal integer number 5, 6 7 monolayers. From comparison experimental theoretical results atomic concentration phosphorus in wires has estimated.

Abstract The manifestation of spin-orbit interactions, long known to dramatically affect the band structure heavy-element compounds, governs physics in surging class topological matter. A particular example is found new family crystalline insulators. In this systems transport occurs at surfaces and spin-momentum locking yields crystal-symmetry protected spin-polarized transport. We investigated current-phase relation SnTe thin films connected superconducting electrodes form SQUID devices....

We present the nanofabrication and transport properties of single silicon nanowires (NWs) having mean widths in range from sub-30 to 500 nm. Hall effect measurements are undertaken magnetic fields 14 T at 300 K. The NWs defined by electron-beam lithography (EBL) using negative tone resist hydrogen silsesquioxane (HSQ) as a mask for reactive ion etching (RIE). Silicon patterned on nonuniform highly doped n-type silicon-on-insulator (SOI) substrates. doping profile has been observed show...

Here the authors report on temperature, Ru concentration and substrate-induced strain dependence of transport properties MRG at or near compensation point . Two sets samples by co-sputtering from Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga targets: (i) where is constant x ~ 1 (Δc/a) varied .8% to 3 .6% (ii) ~1 .9% 0 .62 1.1. The spontaneous Hall effect (SHE) are measured in a physical measurement system, with maximum applied...

Point Contact Andreev Reflection (PCAR) is one of the few available methods for determination Fermi level spin polarisation in metals and degenerate semiconductors. It has traditionally been applied at fixed (liquid He) temperatures, using pure niobium as superconductor, essentially zero magnetic fields, all which limit amount information that it can provide – i.e. do not allow extraction sign make assignment transport regime to ballistic or diffusive almost impossible. Here a series...