A5035341377- Quantum Dots Synthesis And Properties
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Electromagnetic Launch and Propulsion Technology
- Perovskite Materials and Applications
- Magnetic and transport properties of perovskites and related materials
- solar cell performance optimization
- Welding Techniques and Residual Stresses
- Dielectric materials and actuators
- ZnO doping and properties
- MXene and MAX Phase Materials
- Gas Sensing Nanomaterials and Sensors
- Hydrogen embrittlement and corrosion behaviors in metals
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
Luxembourg Institute of Science and Technology
2015-2024
University of Luxembourg
2016-2021
National Institute of Chemistry
2021
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation G. Rey, A. Redinger, J. Sendler, T. P. Weiss, M. Thevenin, Guennou, B. El Adib, S. Siebentritt; The band gap of Cu2ZnSnSe4: Effect order-disorder. Appl. Phys. Lett. 15 September 2014; 105 (11): 112106. https://doi.org/10.1063/1.4896315 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends...
Abstract Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered depth gradients and alkali extrinsic doping. Sodium well known impede interdiffusion of in polycrystalline Cu(In,Ga)Se 2 films, thus influencing distribution. Here, however, sodium shown have opposite effect monocrystalline gallium-free CuInSe grown on GaAs substrates. Gallium in-diffusion from substrates...
Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly processing. We replace the toxic deposited CdS buffer layer from our Cu(In,Ga)(S,Se)2 (CIGS)-based solar cells with a benign inkjet-printed annealed Zn(O,S) 230 000 times less 64 chemicals. The wetting final thickness on CIGS is controlled by UV ozone treatment drop spacing, whereas annealing temperature atmosphere determine composition band gap. best cell...
Abstract Chemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO 2 films suitable for piezoelectric applications. Control processing parameters is utmost importance to obtain high‐quality functional films. However, the impact annealing atmosphere on properties solution‐processed not clear. In this work, influence and growth methods orientation, density electrical La:HfO studied. The 45 nm‐thick are grown by two routes, conventional (crystallization final film)...
Abstract Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se 2 (CIGSe) solar cells. Doping normally achieved through solid state reactions, but recent observations of gas-phase alkali transport the kesterite sulfide (Cu ZnSnS 4 ) system (re)open way a novel strategy. However, current understanding very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% 8% by sodium incorporation alone, (ii) identifies most likely routes...
We investigate the dopant concentration and majority carrier mobility in epitaxial CuInSe2 thin films for different copper-to-indium ratios selenium excess during growth. find that all copper-poor samples are n-type, hopping conduction a shallow donor state plays significant role transport. Annealing sodium ambient enhances gallium in-diffusion from substrate wafer changes net doping of previously n-type to p-type. suggest incorporation glass might be responsible observed p-type...
Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% 7.7% on average, respectively) due enhanced fill factor 0.58 0.61 0.62), open-circuit voltage (Voc) 314 mV 337 325 mV) short-circuit current density 35.3 mA⋅cm −2 38.3 38.6 −2). Voc improvement was higher for cells an increase in radiative at room shallower defect activation energy as determined by photoluminescence (PL) dependent admittance...
In this work, we demonstrate an approach for improving ferroelectric properties of La:HfO2 thin films by shifting the grain growth regime toward heterogeneous nucleation. A dilute 0.083 M instead a 0.25 solution together with annealing step after every spin-coating cycle film gives rise to significant improvement properties. While remanent polarization 7 μC/cm2 was found randomly oriented conventional films, value 15 is result mixed 111 and 002 preferential orientation. more than 50%...
Antiferroelectrics have been recently sparking interest due to their potential use in energy storage and electrocaloric cooling. Their main distinctive feature is antiferroelectric switching, i.e., the possibility induce a phase transition polar by an electric field. Here, we investigate switching behavior of model perovskite PbZrO3 using thin films processed chemical solution deposition different geometries orientations. Both out-of-plane in-plane configurations are investigated. The...
Abstract Currently, Sb 2 Se 3 thin films receive considerable research interest as a solar cell absorber material. When completed into device stack, the major bottleneck for further improvement is open‐circuit voltage, which focus of work presented here. Polycrystalline thin‐film absorbers and cells are prepared in substrate configuration dominant recombination path studied using photoluminescence spectroscopy temperature‐dependent current–voltage characteristics. It found that...
The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied the presence oxygen gas pulsing is investigated means isotopic tracking <sup>18</sup>O from water precursor and <sup>16</sup>O gas.
This study reports a strong ME effect in thin-film composites consisting of nickel, iron, or cobalt foils and 550 nm thick AlN films grown by PE-ALD at (low) temperature 250 °C ensuring isotropic highly conformal coating profiles. The film quality the interface between are meticulously investigated means high-resolution transmission electron microscopy adhesion test. An (transition) layer partially amorphous AlxOy/AlOxNy with thicknesses 10 20 nm, corresponding to on Ni, Fe, Co foils, is...
Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into device stack, the major bottleneck for further improvement is open circuit voltage, which focus of work presented here. Polycrystalline film absorbers and cells are prepared in substrate configuration dominant recombination path studied using photoluminescence spectroscopy temperature dependent current-voltage characteristics. It found that post-deposition...