A5085645737- Ferroelectric and Piezoelectric Materials
- Microwave Dielectric Ceramics Synthesis
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Anodic Oxide Films and Nanostructures
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Antenna Design and Analysis
- Energy Harvesting in Wireless Networks
- Electronic and Structural Properties of Oxides
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing
- Quantum Computing Algorithms and Architecture
- Quantum-Dot Cellular Automata
- Tactile and Sensory Interactions
- Multiferroics and related materials
- Nanomaterials and Printing Technologies
- Magnetic and transport properties of perovskites and related materials
University of Luxembourg
2023-2025
Luxembourg Institute of Science and Technology
2023-2025
Institute for Biomedical Engineering
2021
ETH Zurich
2021
Nanoscale 3D printing is attracting attention as an alternative manufacturing technique for a variety of applications from electronics and nanooptics to sensing, nanorobotics, energy storage. The constantly shrinking critical dimension in state-of-the-art technologies requires fabrication complex conductive structures with nanometer resolution. Electrochemical techniques are capable producing impurity-free metallic conductors superb electrical mechanical properties, however, true nanoscale...
Abstract Chemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO 2 films suitable for piezoelectric applications. Control processing parameters is utmost importance to obtain high‐quality functional films. However, the impact annealing atmosphere on properties solution‐processed not clear. In this work, influence and growth methods orientation, density electrical La:HfO studied. The 45 nm‐thick are grown by two routes, conventional (crystallization final film)...
Lead-free piezoelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT–BCT) thin films deposited by chemical solution deposition on platinized silicon substrates using ethylene glycol and ethanol solvents for alkaline-earth carboxylates transition-metal alkoxides, respectively, are studied. Undoped manganese-doped BZT-BCT prepared repeated of a 0.1 M precursor multistep annealing at 850 °C until reaching the thickness about 120 nm exhibit predominantly columnar microstructure with preferential...
Acoustic haptic technology adds touch sensations to human-machine interfaces by integrating piezoelectric actuators onto touchscreens. Traditional technologies use opaque lead-containing ceramics that are both toxic and visible. We have developed a highly transparent lead-free device using potassium sodium niobate (KNN) conductive oxide thin films. The KNN film, grown on glass, exhibits pure perovskite phase dense microstructure. This achieves up 80% transmittance, surpassing lead zirconate...
Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped and solid solution (Hf,Zr)O$_2$ films. Functional properties can be further tuned via multilayering, however, this approach not yet been fully explored HfO$_2$-ZrO$_2$ This work demonstrates a 50 nm thick, solution-processed multilayer film, marking it as thickest such film to date exhibiting ferroelectric properties. The structure was confirmed through transmission electron microscopy...
Manganese-doped 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO (BZT–BCT) ferroelectric thin films deposited on platinized sapphire substrates by chemical solution deposition and multistep-annealed at 850 °C, are investigated. The 100 nm 340 thick films...
High operational frequencies of the upcoming 5G network will result in shorter broadcast distances and dead zones. Additional access points signal repeaters embedded into existing infrastructure therefore be needed. We demonstrate an autonomous communication module based on additively manufactured transparent antenna set to operate at 2.4 GHz. The is made inkjet-printed indium tin oxide, with visible light transmittance, electrical conductivity, Haake's figure merit 87%, 1,280 S cm−1, 4.9 ×...