C. L. Yang

ORCID: 0009-0000-7412-7803
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Research Areas
  • Quantum and electron transport phenomena
  • Semiconductor Quantum Structures and Devices
  • Physics of Superconductivity and Magnetism
  • Molecular Junctions and Nanostructures
  • Graphene research and applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Magnetic properties of thin films
  • Nanowire Synthesis and Applications
  • Surface and Thin Film Phenomena
  • Electronic and Structural Properties of Oxides
  • Thermal Radiation and Cooling Technologies
  • Porphyrin and Phthalocyanine Chemistry
  • Quantum-Dot Cellular Automata
  • Cold Atom Physics and Bose-Einstein Condensates
  • Guidance and Control Systems
  • Adaptive Dynamic Programming Control
  • Advanced Thermodynamics and Statistical Mechanics
  • Random lasers and scattering media
  • Iron-based superconductors research
  • Electrocatalysts for Energy Conversion
  • Spectroscopy and Quantum Chemical Studies
  • Rare-earth and actinide compounds
  • Luminescence and Fluorescent Materials
  • Adaptive Control of Nonlinear Systems

Beijing National Laboratory for Molecular Sciences
2020-2025

Peking University
1995-2025

South China University of Technology
2020-2022

State Key Laboratory of Luminescent Materials and Devices
2020-2022

Hong Kong University of Science and Technology
2022

University of Hong Kong
2010-2022

State Key Laboratory for Structural Chemistry of Unstable and Stable Species
2020

Hebei Normal University
2015

National Laboratory for Superconductivity
2015

Institute of Physics
2011-2015

We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has gate-voltage dependence unless the electron is reduced values. Such transition WAL correlated unusual changes longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at negative gate voltages possible role of surface states phenomena.

10.1103/physrevlett.105.176602 article EN Physical Review Letters 2010-10-19

Electron transfer (ET) is crucial in many chemical reactions, but its mechanism and role are hardly understood nanobiotechnology due to the complexity of reaction species pathways involved. By modulating monitoring electron behavior at single-molecule level, we can better understand fundamental mechanisms ways control them for technological use. Here, unravel a single-electron catalysis under positively charged nanoconfinement. We demonstrate that both (2 + 2) (4 4) cycloadditions be...

10.1021/jacs.4c18064 article EN Journal of the American Chemical Society 2025-02-06

Using Corbino samples we have observed oscillatory dc conductance in a high-mobility two-dimensional electron system when it is subjected to crossed microwave and magnetic fields. At the strongest of oscillation minima found be vanishingly small, indicating macroscopic insulating state associated with this minimum. With increasing voltage bias, crossover from Ohmic electron-heating regime observed.

10.1103/physrevlett.91.096803 article EN Physical Review Letters 2003-08-29

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers be accomplished through Zener tunneling mechanism, and make significant contribution the magnetoresistance. A remarkable oscillation effect weak field magnetoresistance has been observed high-mobility 2DEGs GaAs-AlGa$_{0.3}$As$_{0.7}$ heterostructures, well explained by...

10.1103/physrevlett.89.076801 article EN Physical Review Letters 2002-07-24

Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on Hall bar sample of single layer graphene. In resistance, the shows common damping effect SdH and can be well accounted for by an elevated electron temperature that is found to linearly dependent bias. differential novel phase inversion has been observed with increasing bias, namely we observe oscillation maxima develop into minima vice versa. Moreover, it onset biasing current, at which extremum about...

10.1103/physrevb.84.115429 article EN Physical Review B 2011-09-21

Using a two-axis magnet, we have studied experimentally the influence of parallel magnetic field $({B}_{∕∕})$ on microwave-induced resistance oscillations (MIROs) and zero-resistance states (ZRS) previously discovered in high-mobility two-dimensional electron system. We observed strong suppression MIRO/ZRS by modest ${B}_{∕∕}\ensuremath{\sim}1\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. In Hall bar samples, magnetoplasmon resonance (MPR) has also been concurrently with MIRO/ZRS. contrast to...

10.1103/physrevb.74.045315 article EN Physical Review B 2006-07-18

The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing sharp commensurate geometrical (GR). Analysis shows that MIRO, MP, GR decoupled from each other in these experiments.

10.1103/physrevb.74.075313 article EN Physical Review B 2006-08-09

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTEffect of variation in the microenvironment fractal structure on donor decay curve resulting from a one-step dipolar energy-transfer processC. L. Yang, P. Evesque, and M. A. El-SayedCite this: J. Phys. Chem. 1986, 90, 7, 1284–1288Publication Date (Print):March 1, 1986Publication History Published online1 May 2002Published inissue 1 March 1986https://pubs.acs.org/doi/10.1021/j100398a016https://doi.org/10.1021/j100398a016research-articleACS...

10.1021/j100398a016 article EN The Journal of Physical Chemistry 1986-03-01

The past two decades have witnessed increasingly rapid advances in the field of single-molecule electronics, which are expected to overcome limitation miniaturization silicon-based microdevices, thus promoting development device manufacturing technologies and characterization means. In addition this, they can enable us investigate intrinsic properties materials at atomic- or molecular-length scale probe new phenomena that inaccessible ensemble experiments. this perspective, we start from a...

10.1063/1.5144275 article EN The Journal of Chemical Physics 2020-03-23

A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopant patterns. The STM’s low energy electron beam removes hydrogen from H terminated Si(100) surfaces selective adsorption of PH3 precursor molecules, followed by room temperature overgrowth and 500 °C rapid thermal anneal to create activated P-donor patterns in As+-implanted lines. Electrical magnetoresistance...

10.1116/1.1813466 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2004-11-01

10.1016/j.physe.2003.11.205 article EN Physica E Low-dimensional Systems and Nanostructures 2004-02-27

Using very high-mobility $\mathrm{Ga}\mathrm{As}∕{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ two-dimensional electron Hall bar samples, we have experimentally studied the photoresistance and/or photovoltaic oscillations induced by microwave irradiation in regime where both $1∕B$ and $B$-periodic can be observed. In frequency range between 27 $130\phantom{\rule{0.3em}{0ex}}\mathrm{GHz}$, found that these two types of are decoupled from each other, consistent with respective...

10.1103/physrevb.76.153306 article EN Physical Review B 2007-10-16

We report the crystal growth of a new compound, Yb3Os4Ge13, by using Bi-flux method. X-ray diffraction measurement shows that it crystallizes in quasi-skutterudite-type caged structure with cubic space group Pm-3n (No. 223). Magnetic measurements reveal almost fully localized Yb f-moments above 120 K. The resistivity exhibits crossover from metallic to insulating behavior logarithmic increase below ~ 40 specific heat coefficient rapid upturn ~5 K and exceeds 2 J mol-1 K-2 at Our experimental...

10.1103/physrevb.91.075120 article EN Physical Review B 2015-02-20

Chirality is an important aspect of nature, and numerous macroscopic methods have been developed to understand control chirality. For the chiral tertiary amines, their flexible flipping process makes it possible achieve high controllability without bond formation breaking. Here, we present a type stable single-molecule devices formed by using graphene-molecule-graphene junctions. These allow real-time, in situ, long-time measurements individual nitrogen center with temporal resolution....

10.1126/sciadv.ado1125 article EN cc-by-nc Science Advances 2024-07-12

Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following brief overview now well-known phenomenon, this paper reports on aspects more recent experiments subject. These are: new associated with multi-photon processes; suppression Shubnikov-de Haas high-frequency microwaves; and microwave photoconductivity hole system.

10.1142/s0217979204026846 article EN International Journal of Modern Physics B 2004-11-30

Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport such quasi-one-dimensional with and without perpendicular magnetic field was characterized at cryogenic temperatures. Experimental data fit well two-dimensional weak localization interaction theory when the phase coherence length is shorter than smaller dimension confinement. Below transition temperature wire...

10.1103/physrevb.74.153311 article EN Physical Review B 2006-10-24

The knowledge of electron g factor is essential for spin manipulation in the field spintronics and quantum computing. While there exist technical difficulties determining sign semiconductors by established magneto-optical spectroscopic methods. We develop a technique to precisely measure amplitude using time resolved Kerr rotation.

10.1063/1.3402769 article EN Applied Physics Letters 2010-04-12

In a high-mobility two-dimensional hole gas (2DHG) in C-doped (001) $\text{GaAs}/{\text{Al}}_{0.4}{\text{Ga}}_{0.6}\text{As}$ quantum wells, we observe sharp features the differential magnetoresistance, which interpret as Zener-tunneling peak and valley associated with commensuration transition of Landau orbits. Comparison data that $\text{GaAs}/{\text{Al}}_{0.3}{\text{Ga}}_{0.7}\text{As}$ 2D electron suggests amplitude Zener oscillations 2DHG is strongly damped. The indicate significant...

10.1103/physrevb.80.041310 article EN Physical Review B 2009-07-20

A two-peak photoluminescence (PL) spectrum of ${\mathit{p}}^{\mathrm{\ensuremath{-}}}$-type porous silicon (PS) has been observed in atmospheric stored samples. According to different spectral characteristics, especially linewidth, and effects induced by storage illumination samples, the low- high-energy peaks are identified as due emission caused quantum confinement remnant Si walls PS siloxene and/or ${\mathrm{SiO}}_{2}$ on surfaces, respectively. light-emitting mechanism accounting for PL...

10.1103/physrevb.51.11194 article EN Physical review. B, Condensed matter 1995-04-15

The advancement of molecular electronics endeavors to build miniaturized electronic devices using molecules as the key building blocks by harnessing their internal structures and orbitals. To date, linear planar conjugated or cross-conjugated have been extensively employed in fabrication single-molecule devices, benefiting from good conductivity compatibility with electrode architectures. However, development multifunctional particularly those unique charge transport properties, necessitates...

10.1021/jacs.4c10924 article EN Journal of the American Chemical Society 2024-10-19
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