A5052703056- Force Microscopy Techniques and Applications
- Advanced MEMS and NEMS Technologies
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Advanced Surface Polishing Techniques
- Advancements in Photolithography Techniques
- Metal and Thin Film Mechanics
- Mechanical and Optical Resonators
- Ion-surface interactions and analysis
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Diamond and Carbon-based Materials Research
- Quantum and electron transport phenomena
- Electrowetting and Microfluidic Technologies
- Nanofabrication and Lithography Techniques
- Electronic and Structural Properties of Oxides
- Copper Interconnects and Reliability
- Surface and Thin Film Phenomena
- Advanced Sensor and Energy Harvesting Materials
- Piezoelectric Actuators and Control
- Advanced Materials and Mechanics
- Photonic Crystals and Applications
- Near-Field Optical Microscopy
- Semiconductor materials and interfaces
Technische Universität Ilmenau
2006-2018
Kirchhoff (Germany)
2007-2009
University of Kassel
1998-2006
Single-electron devices operating at room temperature require sub-5 nm quantum dots having tunnel junctions of comparable dimensions. Further development in nanoelectronics depends on the capability to generate mesoscopic structures and interfacing these with complementary metal–oxide–semiconductor a single system. The authors employ combination two novel methods fabricating silicon single-electron transistors (SETs), Fowler–Nordheim scanning probe lithography (F-N SPL) active cantilevers...
Understanding the consequences of local surface charging on evolving etching profile is a critical challenge in high density plasma etching. Deflection positively charged ions locally varying electric fields can cause defects such as notching, bowing, and microtrenching. We have developed numerical simulation model capturing influence effect over entire course process. The fully integrated into ViPER (Virtual Plasma Etch Reactor)—a full featured processing software at Ilmenau University...
In the last years, silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping have been developed. There flow of and deposition precursors is chopped which results in controllable sidewall passivation anisotropy. However, rippled sidewalls are a serious limit for various applications. We report development novel technique (GCET) process order to achieve smooth (rippled free) surface. As direct etch mask, we used 1 or 2-μm-thick resist layer, was...
Scanning proximity probes are uniquely powerful tools for analysis, manipulation, and bottom-up synthesis. A massively parallel cantilever-probe platform is demonstrated. 128 self-sensing self-actuated proximal discussed. Readout based on piezoresistive sensors bending control bimorph dc/ac actuations described in detail.
High-speed atomic force microscopy (AFM) is actually a functional tool for the studies of dynamical phenomena biological and chemical objects on sub-second timescale. In order to increase imaging speed, all dynamic components AFM have be optimized. This paper presents advancement in development novel x?y scanner high-speed non-contact AFM. We developed quasi-monolithic integration silicon parallel kinematic mechanism with piezoelectric actuators. Decoupling motion directions realized due...
A novel combination of silicon micromachining and deposition on whiskers (111) oriented substrates shows promise for stable field emission electron emitters sensors scanning probe microscopy. As a show high-density high-resolution beam applications owing to small (within 3°) divergence half angle emitted electrons. Due the sharpening diamond coated Si tips threshold voltage, which is necessary create current (nanoampers) decreased from initial 1300 V about 150 V. The coating stabilizes...
Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport such quasi-one-dimensional with and without perpendicular magnetic field was characterized at cryogenic temperatures. Experimental data fit well two-dimensional weak localization interaction theory when the phase coherence length is shorter than smaller dimension confinement. Below transition temperature wire...
A simulation program based on a phenomenological surface etching reaction model and reactant transport including shadowing diffuse particle reflection at the sidewalls was developed to investigate dependence of rate profile quality gas chopping deep reactive ion processes process parameters sample temperature. The simulations are in good agreement with experimental results. heating characteristics geometry (area, thickness) teeny microelectromechanical systems devices or membrane-like...
This article presents the fabrication and characteristics of 8×64, parallel, self-actuated, independently addressable scanning proximal probes with through-silicon via interconnection passing completely through a silicon wafer. The low-resistance highly doped polysilicon through-wafer electrical interconnects have been integrated (SPPs) to enable back side contacts application-specific circuit used as an atomic force microscope control circuitry. Every SPP sensor contains deflection sensor,...
The authors report a microfabrication procedure of self-actuated piezoresistive scanning probes (SAPSPs). They are designed for SAPSP instrument that is integrated with an ion beam aligned single implantation in ultrahigh vacuum. novelty the design hollow pyramid, instead previously mechanically hand mounted pyramid [J. Vac. Sci. Technol. B 23, 2798 (2005)]. has dual purpose. First it collimates and suppresses secondary particles from back side cantilever, so target material can be used...