A5026453582- Advanced Surface Polishing Techniques
- Force Microscopy Techniques and Applications
- Surface and Thin Film Phenomena
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Advanced MEMS and NEMS Technologies
- Silicon and Solar Cell Technologies
- Advanced Measurement and Metrology Techniques
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Photolithography Techniques
- Nanofabrication and Lithography Techniques
- Advanced Fiber Optic Sensors
- Photonic and Optical Devices
- Mechanical and Optical Resonators
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Electric Power Systems and Control
- Advanced Research in Systems and Signal Processing
- Electronic and Structural Properties of Oxides
- Advanced machining processes and optimization
- Scientific Measurement and Uncertainty Evaluation
- Advanced Materials Characterization Techniques
- Piezoelectric Actuators and Control
Technische Universität Ilmenau
1996-2022
Universität Innsbruck
2018
Kirchhoff (Germany)
2008-2009
Institut für Mikroelektronik- und Mechatronik-Systeme
1993
Scanning proximity probes are uniquely powerful tools for analysis, manipulation, and bottom-up synthesis. A massively parallel cantilever-probe platform is demonstrated. 128 self-sensing self-actuated proximal discussed. Readout based on piezoresistive sensors bending control bimorph dc/ac actuations described in detail.
Scanning probe-based methods for surface modification and lithography are an emerging method of producing sub 20-nm features nanoelectronic applications. In this study, we have demonstrated the nanoscale based on patterning 10 to 50-nm-thick calix[4]arene by electric-field-induced electrostatic scanning probe lithography. The size control is obtained using interactions depends applied bias speed AFM tip. width lines dots varies from 60 nm depending tip-sharpness, tip-substrate separation...
Abstract The field of optical lithography is subject to intense research and has gained enormous improvement. However, the effort necessary for creating structures at size 20 nm below considerable using conventional technologies. This resulting financial requirements can only be tackled by few global companies thus a paradigm change semiconductor industry conceivable: custom design solutions specific applications will dominate future development (Fritze in: Panning EM, Liddle JA (eds) Novel...
Abstract Field effect devices on the basis of InSb are increasingly used in semiconductor technique. Due to non‐parabolicity band structure conduction theoretical description such is more complicated than for other materials. A simple method self‐consistent quantum mechanical calculation electronic inversion layers materials with a Kane presented which well suited application The based an extension modified local density approximation interface problems. efficiency this shown example by...
The fabrication process, application, and properties of a novel piezoresistive multiprobe with an integrated thermal tip deflection actuator are described in this article. optimized process the microprobe enables high-frequency sensor operation integration high sharp conical tip, which was additionally covered titanium using atomic layer deposition to improve mechanical endurance ensure electrical conductivity. This applied high-resolution self-assembled monolayer surface investigations...
Abstract A new method is described for the self‐consistent calculation of electron and hole densities, band bending, subband energies in inversion layers MIS‐structures. This makes use simple expressions carrier densities which take into account influence interface semiconductor–insulator within a modified local density approximation. The allows an accuracy comparable with that one explicit solutions Schrödinger equation layers. But it numerical simplicity classical method. gives possibility...
A modified Thomas-Fermi approximation (TFA) developed originally for inversion layers is used to calculate electron-density profiles, the spatial dependences of potential, surface potentials, and energies bound states depletion accumulation in n-type GaAs. Remarkable agreement with recently published results self-consistent calculations Ehlers Mills [Phys. Rev. B 34, 3939 (1986)] achieved. All deficiencies conventional TFA discussed there are removed. Methodological advantages discussed.
Abstract A modified Thomas‐Fermi method for the calculation of electronic structure accumulation layers in MIS‐systems is presented which spite simplicity a “classical” yields results good agreement with extensive self‐consistent quantum mechanical calculations. It shown that suitable to describe characteristics bound and mobile carriers layers. The used calculate n‐ p‐type GaAs discuss influence effects at interface on dependence total charge layer surface band bending. Comparison made...
This article presents the fabrication and characteristics of 8×64, parallel, self-actuated, independently addressable scanning proximal probes with through-silicon via interconnection passing completely through a silicon wafer. The low-resistance highly doped polysilicon through-wafer electrical interconnects have been integrated (SPPs) to enable back side contacts application-specific circuit used as an atomic force microscope control circuitry. Every SPP sensor contains deflection sensor,...
This paper focuses on a new Nano Fabrication Machine 100 (NFM-100) with working range up to mm in diameter and its integrated tip-based system, which can be used as an Atomic Force Microscope (AFM) well for Field-Emission-Scanning-Probe-Lithography (FESPL). The combination of both systems offers the possibility fabricate analyze micro- nanostructures high resolution precision down single nanometer over large area one configuration without tool or sensor change. After description basic...
In this work the application of a self-sensing and self-actuating cantilever for gas-flow measurement is investigated. The placed in flow excited permanently at its first resonance mode. Simultaneously amplitude, frequency static bending are detected. All three sizes related to velocity gas-flow.
Abstract. Microcantilevers offer a wide range of applications in sensor and measurement technology. In this work cantilever sensors are used as flow sensors. Most conventional often only calibrated for one type gas allow an analysis mixtures with increased effort. The here is positioned vertically the channel. It possible to operate dynamic static mode. mode oscillating. Resonance frequency, resonance amplitude phase measured. mode, bending registered. combination modes enables different...
Abstract In part I a new method was described for the self‐consistent calculation of electron and hole densities, band bending, subband energies in inversion layers MIS structures. This is numerical simplicity classical but results obtained with this deviate only slightly from those ones explicit solutions Schrödinger equation. Here used to investigate influence quantum effects layer on electronic properties Since latter usually are calculated classically compared even one. The yields...
Abstract The energy gap of the Hg 1− x Cd Te‐system can be controlled by mole fraction Cd. This offers possibility to use this material as a model system for systematic investigations especially in narrow‐gap region (corresponding 0.16 ≦ 0.25). electronic structure, subband occupations, energies, and cyclotron masses are calculated two‐dimensional electron gas MIS structures with using an approximate self‐consistent method. Both, inversion accumulation conditions considered. Comparisons...
Using various temperature-cycling protocols, the dynamics of ice I were studied via dielectric spectroscopy and nuclear magnetic resonance relaxometry on protonated deuterated samples obtained by heating high-density amorphous ices as well crystalline XII. Previous structural studies established that at temperatures about 230 K, stacking disorder cubic/hexagonal oxygen lattice vanishes. The present investigations spectral changes disclose memory existence a precursor phase is preserved in...
Abstract This paper describes a standing-wave interferometer with two laser sources of different wavelengths, diametrically opposed and emitting towards each other. The resulting standing wave has an intensity profile which is moving constant velocity, directly detected inside the beam by thin transparent photo sensors. first sensor at fixed position, serving as phase reference for second one moved along optical axis, in frequency shift, proportional to velocity. difference between both...
The feature dimensions of integrated circuits are becoming smaller and the fabrication, metrology inspection is harder to be fulfilled. Fast-writing long respectively large nano-features with Scanning-ProbeLithography their an Atomic Force Microscope (AFM) a challenge, for accomplishment which Nanofabrication Machine (NFM-100) can serve as beneficial experimental platform basic research in field scale-spanning nanomeasuring nanofabrication. NFM-100 has tipbased system, used AFM well...
Abstract This manuscript describes a novel standingwave arrangement with two laser sources of different wavelengths, emitting towards each other. The resulting standing wave has continuously moving intensity profile, thin, transparent photo sensor is inserted into. When the moved along optical axis frequency shift, proportional to velocity, occurs. shift can be evaluated for purpose interferometric length measurements.
Abstract For the calculation of electronic structure inversion and accumulation layers in MIS‐structures self‐consistent methods based on density functional formalism are well developed. The numerical effort for such calculations is drastically reduced by a modified Thomas‐Fermi method developed last years. unique one both, suited modeling MIS‐devices. It proved that this very accurate. Several problems solved first using it, but till now always neglecting exchange correlation effects. shown...
Standing wave interferometers (SWIs) show enormous potential for miniaturization because of their simple linear optical set-up, consisting only a laser source, measuring mirror and two standing sensors obtaining quadrature signals. To reduce influences on the avoid need an exact long-term stable sensor-to-sensor distance, single-sensor set-up was developed with phase modulation by forced oscillation mirror. When correct stroke is applied, harmonics in sensor signal can be used signals...