A5019269276- GaN-based semiconductor devices and materials
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Glioma Diagnosis and Treatment
- Microwave Engineering and Waveguides
- CAR-T cell therapy research
- Immunotherapy and Immune Responses
- Metal and Thin Film Mechanics
- Advanced Power Amplifier Design
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- Immune cells in cancer
- ZnO doping and properties
- Bayesian Methods and Mixture Models
- Nanowire Synthesis and Applications
- Shoulder and Clavicle Injuries
- Advancements in Semiconductor Devices and Circuit Design
- Neuroinflammation and Neurodegeneration Mechanisms
- Extracellular vesicles in disease
- Shoulder Injury and Treatment
- Cancer Immunotherapy and Biomarkers
- Electromagnetic Compatibility and Noise Suppression
- Congenital Ear and Nasal Anomalies
- Nerve Injury and Rehabilitation
- Reconstructive Facial Surgery Techniques
KBR (United States)
2022-2025
University of Pittsburgh Medical Center
2025
United States Air Force Research Laboratory
2010-2023
Sensors (United States)
2010-2023
U.S. Air Force Research Laboratory Sensors Directorate
2023
Wright-Patterson Air Force Base
2010-2023
Freddie Mac (United States)
2023
University of Pittsburgh
2018-2023
Neurological Surgery
2021
University of California, San Francisco
2019-2021
Treatment of solid cancers with chimeric antigen receptor (CAR) T cells is plagued by the lack ideal target antigens that are both absolutely tumor specific and homogeneously expressed. We show multi-antigen prime-and-kill recognition circuits provide flexibility precision to overcome these challenges in context glioblastoma. A synNotch recognizes a priming antigen, such as heterogeneous but tumor-specific glioblastoma neoantigen epidermal growth factor splice variant III (EGFRvIII) or...
We demonstrate a β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) maximum oscillating (fmax) 3.3 12.9 GHz, respectively, enabled by implementing new highly doped ohmic cap layer sub-micron gate recess process. RF performance was further verified CW Class-A power measurements passive source...
BACKGROUNDPatients with diffuse midline gliomas (DMGs), including intrinsic pontine glioma (DIPG), have dismal outcomes. We previously described the H3.3K27M mutation as a shared neoantigen in HLA-A*02.01+, H3.3K27M+ DMGs. Within Pacific Pediatric Neuro-Oncology Consortium, we assessed safety and efficacy of an H3.3K27M-targeted peptide vaccine.METHODSNewly diagnosed patients, aged 3-21 years, HLA-A*02.01+ status were enrolled stratum A (DIPG) or B (nonpontine DMG). Vaccine was administered...
We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). show dc, small-signal and load-pull performance at 30 GHz with two barrier alloys-a ternary ScAlN a quaternary ScAlGaN. The active layers are grown by molecular beam epitaxy on GaN-on-SiC template. Sc(Al,Ga)N HEMTs 120 nm gate length achieve transconductance >700 mS/mm >70 cutoff frequency. ScAlGaN sample shows reduced current collapse during pulsed I-V characterization. HEMT delivers 5.77 W/mm...
We report the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band large-signal power and efficiency performance of Ga-polar graded-channel (GC) AlGaN/GaN high-electron-mobility transistors (HEMTs) with a 50-nm gate-length mini-field-plate (FP) T-gate. The pre-matched GC GaN HEMT devices on-chip pre-matching networks show peak power-added (PAE) 45% at 94 GHz 2.1 W/mm...
This article presents a set of measured benchmarks for the noise and gain performance six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four foundries in United States. Measurements GaN transistors were collected on two independent parameter (NP) systems from 8–50 GHz 75–110 GHz. The resulting raw NPs stitched together to yield ultra broadband 8–110 smoothed NPs. Several comparisons summaries minimum figure...
A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC) designer typically has to choose a device design either for high-gain millimeter-wave operation with short gate length, or high-power-density <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula> -band much larger gate/field-plate structure. We provide the option of incorporating two different...
Beta-gallium oxide (BGO) radio frequency device performance is presented using sub-micron T-shaped gates. In the first design, a gate-recess implemented to allow gate and channel scaling which results in f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 3/13 GHz at VDS= 40 V. The second approach uses thin higher doped with T-gate formed by electron beam lithography. An 5/17...
Abstract A wafer‐scale comparison of HEMTs fabricated on as‐grown GaN/Si and in parallel epitaxial layers from the growth integrated with a diamond substrate are presented. Diamond, which offers highest room‐temperature thermal conductivity any bulk material, is being evaluated as solution for limitations observed GaN‐based devices. This paper will present electrical data collected at wafer scale demonstrating improvement realized by integration high‐thermal‐conductivity substrate. (© 2014...
We report the fabrication of N-polar GaN metal–insulator– semiconductor high-electron-mobility transistors (MIS-HEMTs) with a power-added efficiency (PAE) 43.7% from an 8-V supply measured by load pull at 94 GHz. The devices are fabricated on 100-mm SiC substrates and exhibit excellent uniformity, constituting first <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band power...
This paper presents for the first time an investigation of ASM-HEMT model large-signal accuracy across a wide range operating frequencies. Comparisons between measured and simulated power sweeps are presented at 10, 20 30 GHz. Load-pull measurements simulations compared spanning same frequency range. The single exhibit excellent agreement with all measurements.
In this paper, we validate the industry standard ASM-HEMT model for non-linear large-signal modeling of 140 nm GaN HEMT at X-band. An accurate has been developed fundamental, second-, and third-order harmonic frequency. Time-domain waveforms dynamic load-line simulations from are also validated against vector analyzer measurements. This is first validation harmonics NVNA data. A good agreement with measurements obtained.
This paper reports a temperature-dependent ASM-HEMT for modeling GaN HEMTs at elevated temperatures. Modifications to the standard were developed accurately capture DC and RF measurements collected varying chuck Several results are reported which validate model including DC-IV, pulsed-IV, scattering-parameter, load-pull measurements. The is then used extrapolate performance of HEMT twice operating temperature was validated. work could be useful understanding in high-temperature environment...
This paper presents the development of high-gain, wide-bandwidth, W-band LNA integrated circuits utilizing a novel 0.25 μm InP/Si BiCMOS process with Ft/Fmax 330/270 GHz. A 4-stage microstrip achieves minimum NF 5.7 dB at 92 GHz and remains less than 7.2 (6.4 avg.) across 75-100 bandwidth. The also exhibits peak gain 27.7 dB, 3-dB bandwidth 18 (80-98 GHz), > 20 over 75-110 GHz, while consuming only 19.2 mW DC power from 1.2V supply. Additionally, individual bias control for each device has...
Abstract: Glenohumeral bone loss is frequently observed in cases of recurrent anterior and posterior shoulder instability represents a risk factor for failure nonoperative treatment. Patients with suspected glenoid or humeral the setting should be evaluated thorough history physical examination, as well advanced imaging including computed tomography (CT) and/or magnetic resonance (MRI). In both instability, magnitude location determined, relationship between track (GT) any defects. While...
We report on deeply scaled AlN/GaN HEMTs demonstrating power added efficiency (PAE) of 56% and 780 mW/mm output at 94 GHz. This high transistor W-band is enabled by in-situ SiN passivation, a 40-nm T-gate, scaling the source-to-drain length to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.23\ \mu \mathrm{m}$</tex> using electron-beam lithography. Scaled regrown n+ GaN ohmic contacts result in HEMT on-resistance (...
This paper presents for the first time an accurate ASM-HEMT model millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements. The is used to predict optimal performance of a operating conditions beyond limitations system. measurements exhibits peak PAE 35% ASMHEMT predicts 42%.
This article presents an empirical investigation of calibration effects on load-pull measurements collected wafer and at W-band frequencies. An analysis scattering parameter (S-parameter) provides insight into how small-signal metrics germane to load pull are affected by choice the technique. It is found that off-wafer line-reflect-reflect-match (LRRM) calibrated same transistor with different probes exhibit drastically maximum gains compared equivalent on-wafer multiline thru-reflect-line...
Millimeter-wave applications above Ka-band have become increasingly important for the defense sector. With overcrowded spectrum at lower microwave frequencies, more systems are demanding use of space V-, and W-band with wider bandwidth. Gallium-Nitride (GaN) has intrinsic capability to enable its high-frequency performance, allowing solid-state technology high-power millimeter wave [1]. In order address DoD needs provide a platform, BAE Systems is developing "Scaled GaN HEMT Technology" that...
We report the W-band amplifier performance of graded-channel GaN HEMTs with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> and xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> 170 GHz 347 GHz, respectively. Graded-channel a gate periphery 0.15 mm show peak power-added-efficiency 50% at 94 2.2 W/mm associated power density after deembedding matching network loss 0.3 dB. Pre-matched cells 0.6 total yielded 2.1 W output 3.5 GHz....