A5102785928- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Thermal Expansion and Ionic Conductivity
- Thermal Radiation and Cooling Technologies
- Chalcogenide Semiconductor Thin Films
- Heusler alloys: electronic and magnetic properties
- Advanced Thermodynamics and Statistical Mechanics
- Physics of Superconductivity and Magnetism
- Superconductivity in MgB2 and Alloys
- Phase-change materials and chalcogenides
- Perovskite Materials and Applications
- Catalytic Cross-Coupling Reactions
- Perfectionism, Procrastination, Anxiety Studies
- Semiconductor materials and interfaces
- Topological Materials and Phenomena
- Chemical Synthesis and Analysis
- Catalytic C–H Functionalization Methods
- Advanced Synthetic Organic Chemistry
- Organoboron and organosilicon chemistry
- Cyclopropane Reaction Mechanisms
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
Harbin Institute of Technology
2018-2025
Nankai University
2020-2023
Thermoelectric interface materials (TEiMs) are essential to the development of thermoelectric generators. Common TEiMs use pure metals or binary alloys but have performance stability issues. Conventional selection generally relies on trial-and-error experimentation. We developed a TEiM screening strategy that is based phase diagram predictions by density functional theory calculations. By combining with electrical resistivity and melting points potential reaction products, we discovered...
Bi2 Te3 -related alloys dominate the commercial thermoelectric market, but layered crystal structure leads to dissociation and intrinsic brittle fracture, especially for single crystals that may worsen practical efficiency. In this work, point defect configuration by S/Te/I defects engineering is engaged boost mechanical properties of n-type alloy, which, coupled with p-type BiSbTe, shows a competitive conversion efficiency fabricated module. First, as S alloying suppresses BiTe, antisite...
Abstract At present, the weak thermoelectric and mechanical performance of zone‐melting bismuth telluride alloys cannot support further improvement cooling processing semiconductor refrigeration devices. Here, MnO 2 is added into high‐strength Bi 0.4 Sb 1.6 Te 3 prepared by ball milling method to optimize its transport properties. Via in situ reaction, O nano‐precipitates are formed matrix, which also leads surplus element. As results, donor‐like effect suppressed, thereby increasing carrier...
SnTe is known as an eco-friendly analogue of PbTe without toxic elements. However, the application potentials pure are limited because its high hole carrier concentration derived from intrinsic Sn vacancies, which lead to a electrical thermal conductivity and low Seebeck coefficient. In this study, self-compensation Mn alloying could significantly improve coefficients in whole temperature range through simultaneous optimization band engineering, thereby leading large improvement power...
The ferroelectric phase transition of GeTe thermoelectric materials caused by the 4s2 lone-pair electrons Ge2+ leads to sudden change thermal expansion coefficient, which severely restrains its practical applications. Herein, we demonstrate a successful way suppress phase-transition temperature down below room in GeTe. Our approach involves LiSbTe2 alloying, where charge distribution is manipulated reduce influence stereochemical activity cation on crystal structure. alloying can also...
Abstract Sustained thermoelectric efforts have concentrated on the enhancement of conversion efficiency power generators, while simultaneously achieving high output continues to lag. Specifically, highest density emerging Mg‐based modules reported so far is only half that commercial Bi 2 Te 3 ‐based, mainly due low factor MgAgSb. Herein, homogenously distributed MgCuSb in situ nanoprecipitates MgAgSb matrix effectively optimized carrier concentration effect injection from metal–semiconductor...
Abstract The intertwining between thermal and electrical transport poses significant challenges to enhancing thermoelectric performance. Chemical doping with a single element often can optimize one of the parameters yet may deteriorate others, restricting upper limit ZT achievable. Multi‐element address this interdependence, allowing for simultaneous optimization properties. However, clear selection rule multiple dopants remains unclear. Here, stepwise strategy is shown improve performance...
Abstract In an effort to improve the thermoelectric performance of environmentally friendly SnTe, here, a multilevel structure composed “lotus‐seedpod‐like” grain boundaries, dense dislocations, and nanopores is innovatively constructed, which synergistically reduces sound velocity phonon relaxation time, resulting in ultralow lattice thermal conductivity throughout wide temperature range. An ultrahigh figure merit, ZT , ≈1.7 unprecedented average ≈1 from 300 873 K are obtained. contrast...
Abstract Thermoelectric refrigeration is one of the mature techniques used for cooling applications, with great advantage miniaturization over traditional compression refrigeration. Due to anisotropic thermoelectric properties n‐type bismuth telluride (Bi 2 Te 3 ) alloys, these two common methods, including liquid phase hot deformation (LPHD) and forging (HF) are considerable importance texture engineering enhance performance. However, their effects on mechanical still controversial not...
Abstract Mg 3 (Sb, Bi) 2 ‐based materials possess excellent room‐temperature thermoelectric performance, while poor interfacial behaviors occur when connected with metal electrodes due to the strong chemical activity and volatility of element. In this study, a high efficiency 7.1% under temperature difference 230 K is achieved in n‐Mg /p‐Bi Te module. When changing layer from Fe powder foil, it effectively prevents significant diffusion both Bi elements material matrix layer, resulting an...
Abstract Thermal properties strongly affect the applications of functional materials, such as thermal management, barrier coatings, and thermoelectrics. Thermoelectric (TE) materials must have a low lattice conductivity to maintain temperature gradient generate voltage. Traditional strategies for minimizing mainly rely on introduced multiscale defects suppress propagation phonons. Here, origin anomalously is uncovered in Cd‐alloyed Mg 3 Sb 2 Zintl compounds through complementary bonding...
Abstract Zintl compounds such as n‐type Mg 3 (Sb,Bi) 2 show promising thermoelectric applications benefiting from their high valley degeneracy and low lattice thermal conductivity. However, the heavier p‐type A X ( = Ca, Yb; Bi Sb) counterparts even exhibit a higher κ lat due to strong chemical bonding. Reducing of is an important route for improving performance. Herein, it found that Cd doping at site in CaMg can weaken intralayer covalent bonds soften acoustic phonons, well fill optical...
Abstract Significantly enhanced thermoelectric performance is achieved for eco‐friendly SnTe by a coorperative effect between dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, Seebeck coefficient remarkably improved, leading to an power factor, with high of ≈29 µW cm −1 K −2 at 873 K. Lattice thermal conductivity sharply reduced, approaching amorphous limit, strong phonon scattering induced multiple scales Cu 2 Te...
Abstract To achieve the commercial application of high‐performance skutterudite (SKD) thermoelectric (TE) devices, breakthroughs in batch fabrication TE material and realization its stable bonding to barrier layer are necessary. In this work, large‐scale SKD bulks with excellent performance decent homogeneity prepared by melt‐spinning (MS) combined a hot pressing process. Then, modified two‐step sintering method is employed effectively suppress degree initial interfacial reaction, resulting...