A5072350020- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Thermal Radiation and Cooling Technologies
- Thermal Expansion and Ionic Conductivity
- Advanced Thermodynamics and Statistical Mechanics
- Heusler alloys: electronic and magnetic properties
- Chalcogenide Semiconductor Thin Films
- Superconductivity in MgB2 and Alloys
- Physics of Superconductivity and Magnetism
- Topological Materials and Phenomena
- Semiconductor materials and interfaces
Harbin Institute of Technology
2019-2024
Thermoelectric interface materials (TEiMs) are essential to the development of thermoelectric generators. Common TEiMs use pure metals or binary alloys but have performance stability issues. Conventional selection generally relies on trial-and-error experimentation. We developed a TEiM screening strategy that is based phase diagram predictions by density functional theory calculations. By combining with electrical resistivity and melting points potential reaction products, we discovered...
Abstract At present, the weak thermoelectric and mechanical performance of zone‐melting bismuth telluride alloys cannot support further improvement cooling processing semiconductor refrigeration devices. Here, MnO 2 is added into high‐strength Bi 0.4 Sb 1.6 Te 3 prepared by ball milling method to optimize its transport properties. Via in situ reaction, O nano‐precipitates are formed matrix, which also leads surplus element. As results, donor‐like effect suppressed, thereby increasing carrier...
Abstract Sustained thermoelectric efforts have concentrated on the enhancement of conversion efficiency power generators, while simultaneously achieving high output continues to lag. Specifically, highest density emerging Mg‐based modules reported so far is only half that commercial Bi 2 Te 3 ‐based, mainly due low factor MgAgSb. Herein, homogenously distributed MgCuSb in situ nanoprecipitates MgAgSb matrix effectively optimized carrier concentration effect injection from metal–semiconductor...
Abstract Mg 3 (Sb, Bi) 2 ‐based materials possess excellent room‐temperature thermoelectric performance, while poor interfacial behaviors occur when connected with metal electrodes due to the strong chemical activity and volatility of element. In this study, a high efficiency 7.1% under temperature difference 230 K is achieved in n‐Mg /p‐Bi Te module. When changing layer from Fe powder foil, it effectively prevents significant diffusion both Bi elements material matrix layer, resulting an...
Abstract To achieve the commercial application of high‐performance skutterudite (SKD) thermoelectric (TE) devices, breakthroughs in batch fabrication TE material and realization its stable bonding to barrier layer are necessary. In this work, large‐scale SKD bulks with excellent performance decent homogeneity prepared by melt‐spinning (MS) combined a hot pressing process. Then, modified two‐step sintering method is employed effectively suppress degree initial interfacial reaction, resulting...
A tiny amount of Mn is doped in In0.15Sb1.85Te3 sample to tailor its carrier concentration, thus boosting the power factor and suppressing bipolar effect. Furthermore, large amounts nanotwins are constructed effectively scatter phonons reduce lattice thermal conductivity. As a result, zT value Mn0.02In0.15Sb1.83Te3 enhanced up 1.0 at 673 K, making this material robust candidate for medium-temperature (500-673 K) thermoelectric applications. Then combining with low-temperature...
The conventional thinking of designing materials with low lattice thermal conductivity κL is usually associated chemical and structural complexity. Here, we proposed a new strategy for establishing the interaction strength between nested cation anionic framework as control knob tuning in two orders magnitude isostructural half-Heusler compounds. A synthesized cubic light-weight 8-electron compound, namely, MgCuSb, exhibits glass-like both temperature dependence that seems to contradict...
A highly competitive ZT ave of 1.23 from 303 K to 523 is achieved in (Bi, Sb) 2 Te 3 by composition regulation. An efficiency 10.5% and a power density 0.53 W cm −2 under Δ T 380 are /Mg segmented modules.
Band-structure engineering is an important strategy that can improve the properties of functional materials or even bring new features to existing systems. Band gap (or energy gap, Eg) plays a crucial role in deciding electronic optical one material. Isoelectronic and isostructural alloys usually exhibit similar band structures, but related effect Eg variation was found be distinct sometimes controversial. Herein, we provided deep understanding origin tuning isoelectronic based on...
Abstract To achieve a wide temperature range and high figure‐of‐merit, segmented assembling is considered as the most effective method based on optimized low‐temperature medium‐temperature thermoelectric materials. In this work, divalent magnesium (Mg) acceptor doping in both Bi 0.5 Sb 1.5 Te 3 indium (In) alloyed 2 play an important role improving performance, including enhanced power factor by balancing electrical conductivity Seebeck coefficient, reduced bipolar thermal delaying...
Bi2Te3-based compounds are the benchmark thermoelectric materials working near room temperature. In this study, we synthesize ytterbium (Yb) doped Bi0.5Sb1.5Te3 bulk by high energy ball milling and direct current hot pressing. The Yb-doping increases carrier concentration suppresses intrinsic excitation, thus optimizing electrical transport properties. addition, point defects introduced adding Yb to lattice behave as extra phonon scattering centres, yielding a reduction in thermal...
Abstract Bi 2 Te 3 ‐based alloys are the most mature and widely used thermoelectric materials since their z T value has been significantly improved in past decades. However, poor mechanical strength machinability derived from easy cleavage along basal planes not only produce many scraps device fabrication process but also lead devices unstable actual service. In this work, a tiny amount of MgB is induced 0.4 Sb 1.6 alloy to simultaneously enhance properties. detail, magnesium atoms occupy...
Abstract Recently, YbCd 2 Sb ‐based Zintl compounds have been widely investigated owing to their extraordinary thermoelectric (TE) performance. However, its p orbitals of anions that determined the valence band structure are split due crystal field splitting provides a good platform for manipulation by doping/alloying and, more importantly, device has yet be reported. In this work, single‐phase 1.5 Zn 0.5 is successfully obtained through precise chemical composition control. Then, YbMg...
It is known that Yb-filled skutterudite with excellent thermoelectric performance promising for a power generation device in the intermediate temperature region. Here we created new approach to obtain nanostructured materials by adding Si Co-overstoichiometric through high-energy ball milling, which embedded bottom-up formed CoSi2 nanoparticles into grain-refining Yb0.25Co4Sb12, synergistically resulting enhanced properties and room-temperature hardness. On one hand, abundant grain...