A5038317345- Silicon and Solar Cell Technologies
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- solar cell performance optimization
- Diamond and Carbon-based Materials Research
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Energetic Materials and Combustion
- Acoustic Wave Resonator Technologies
- Ion-surface interactions and analysis
- Biological Research and Disease Studies
- Semiconductor materials and devices
- Advanced Surface Polishing Techniques
Technological University Dublin
2021
AlyXan (France)
2006-2009
Laboratoire de Chimie Physique
2006
Single‐sided etching (SSE) of a‐Si/poly‐Si is typically considered a challenge for realizing cost‐efficient TOPCon production sequence, as there certain degree unwanted wrap‐around poly‐Si deposition technologies such low pressure chemical vapor deposition, plasma‐enhanced and atmospheric deposition. To date, alkaline or acidic wet‐chemical solutions in either inline batch configurations are used this purpose. Herein, an alternative SSE process proposed using dry tool, which applies...
In this paper, we study the influence of modifying geometry nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification developed that allows low recombination velocities (Seff,min ≤ 10 cm/s) nanotextured surfaces. By simultaneously improving passivation and emitter diffusion processes, achieve equivalent level (VOC,impl ≥ 670 mV) for surfaces to...
A novel atmospheric pressure dry texture process is investigated in order to create nanostructures at the c-Si surface. The uses diluted molecular fluorine (F2) as gas. F2 partially dissociated an elevated temperature before it delivered wafer. Thermal activation of occurs on Si wafer surface a dissociative chemisorption leading removal form volatile SiFx species. etching can be controlled with different aspect ratios and reflection values. In this work, we textured multicrystalline (mc)...
In this paper, we study the impact of change in emitter diffusion profiles on electrical characteristics nanotextured surfaces formed by an inline plasma-less dry-chemical etching process. Our experimental results and process simulations suggest that a deeper highly doped region significantly higher inactive P concentration plays determining role defining recombination, as well resistive losses surfaces. Low saturation current densities phosphorous-diffused are achievable after passivation...
In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The is performed in an inline tool, which specifically developed to lower costs for products needing a high volume manufacturing platform such as photovoltaics. Specifically, current focuses on developing effective front-side texturing process Si(100) wafers. Statistical variation tool parameters achieve rates and low surface reflection textured surface. It...
In this paper, we report significant progress in development and integration of a plasma-less atmospheric pressure dry texturing (ADE) process, performed on multicrystalline silicon (mc-Si) wafers, into high efficiency PERC solar cell architectures using industrially applied process steps. The mechanism forming sub-micron features monocrystalline wafers with commercial grade fluorine gas (F2) is briefly presented. Low weighted surface reflection (Rw,min < 10%) achieved for mc-Si substrates...
In this article, we present an optimization of the emitter diffusion for nanotextured <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> -type monocrystalline silicon solar cells using atmospheric pressure dry etching (ADE) in conjunction with a post-ADE short acidic etch passivated and rear cell (PERC) architecture. The phosphorus oxychloride process was realized by first investigating sheet resistance recombination current density to...
In this contribution, atmospheric pressure dry etching (ADE) texture is integrated into a passivated emitter and rear cell (PERC) process. order to make the suitable for solar processing, two post-etching processes (inverted pyramid, spherical cap) are implemented compared. The passivation of front surface could be improved substantially by introduction an Al2O3 layer deposited via atomic deposition under classical antireflection coating SiNX. impact addition on contact resistance cannot...
This paper presents etching process developments using a single-side gaseous etch based on the thermal reaction of poly-Silicon and gas (molecular fluorine), that results in high selectivity between layers, rate. work was carried out context development solar cell architectures beyond PERC TOPCon, where more sophisticated steps are required order to accurately pattern poly-silicon layers across wafer surface.
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In this paper, a plasma-less atmospheric pressure dry texture process that is capable of forming nanostructures in the c-Si surface, has been investigated. The uses diluted molecular fluorine (F2) as gas. Thermal activation occurs on Si wafer surface dissociative chemisorption leading to removal form volatile SiFx species. etching can be controlled with different aspect ratios and reflection values. Nanotexturing mc wafers was performed by removing very low amount substrate during texturing...