A5011682415- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- CCD and CMOS Imaging Sensors
- Photoreceptor and optogenetics research
- Neuroscience and Neural Engineering
- Neural Networks and Reservoir Computing
- Analytical Chemistry and Sensors
- Transition Metal Oxide Nanomaterials
- Neural dynamics and brain function
- Phase-change materials and chalcogenides
- Photorefractive and Nonlinear Optics
- Advancements in Battery Materials
- Semiconductor Quantum Structures and Devices
- Supercapacitor Materials and Fabrication
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advanced Optical Imaging Technologies
- ZnO doping and properties
- Liquid Crystal Research Advancements
- Terahertz technology and applications
- Advanced Battery Technologies Research
Pohang University of Science and Technology
2023-2025
Kwangwoon University
2020-2025
Abstract To implement a neuromorphic computing system capable of efficiently processing vast amounts unstructured data, significant number synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed nanoscale vertically structured device that supports high-density integration. realize this device, the interface effects between resistive switching layer electrode were investigated utilized. Electrical physical analyses conducted to comprehend...
To overcome the limitation of conventional flash memory, electrochemical random-access memory (ECRAM)-based bypass (bypass RRAM) has been proposed as a potential candidate for V-NAND application. While RRAM demonstrates excellent characteristics through ion hopping conduction, key parameters governing multilevel cell (MLC) operation remain unexplored. In this study, we propose design guidelines RRAM, targeting highly uniform quadruple-level (QLC) by using quantized oxygen vacancy (Vo)...
A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining high-density integration. simple metal–insulator–metal (MIM)-structured developed using an 8-inch wafer-based and complementary metal–oxide–semiconductor (CMOS) fabrication process. The three types MIM-structured devices are compared assess their effects on reducing power. obtained results exhibited low-power operation owing inserted layers acting as...
Vertical three-terminal electrochemical random access memory (ECRAM) is developed to demonstrate the feasibility of high-density integration and mass production. Improved retention was obtained by investigation role electrolyte layer.
Abstract Lately, there has been a rapid increase in the use of software-based deep learning neural networks (S-DNN) for analysis unstructured data consumption. For implementation S-DNN, synapse-device-based hardware DNN (H-DNN) proposed as an alternative to typical Von-Neumann structural computing systems. In H-DNN, various numerical values such synaptic weight, activation function, and etc., have be realized through electrical device or circuit. Among them, weight that should both positive...
Abstract In this research, we propose a method that can significantly improve the linearity of current–voltage characteristics ( L–IV ) synapse devices. Considering analog input data are dependent on , devices having non-linear result in drastic conductance variations during inference operations. It means is one key parameters device. To triode region metal oxide semiconductor field effect transistor (MOSFET) was utilized with Li-ion-based memristor as gate voltage divider, which results...
Abstract This study investigates the impact of an oxygen reservoir layer on performance three‐terminal (3T) oxide ion‐based electrochemical random access memory (Ox‐ECRAM). Three Ox‐ECRAM synapse devices are compared: single layer, double 1, and 2. The results indicate that is crucial for maintaining channel conductance while preventing gate leakage. also modulates via absorption supply ions. In addition, ion migration barrier energy plays a key role in reliability Ox‐ECRAM, with higher...
In this study, a two-dimensional electron gas (2DEG), which is conductive layer formed at the interface of Al2O3and TiO2, was used as an electrode for resistive random access memory (RRAM) and implemented in cell size down to 30 nm. For RRAM device comprising W/2DEG/TiO2/W, we confirmed that dominant switching mechanism changed from interfacial filamentary decreased 500 nm Through analyses changes forming characteristics conduction mechanisms low state depending on size, it identified 2DEG...
In this study, we investigated the influence of ultraviolet (UV) treatment on ovonic threshold switch (OTS) to improve its selector properties. Our findings demonstrate that iteratively applying UV during film deposition phase considerably improves device characteristics compared a single treatment. Consequently, process provided significant decrease in forming voltage, maintaining outstanding switching features, with an off-state current approximately 2 nA. Furthermore, refined resulted...
Abstract Synapse devices are essential for the hardware implementation of neuromorphic computing systems. However, it is difficult to realize ideal synapse because issues such as nonlinear conductance change (linearity) and a small number states (dynamic range). In this study, correlation between linearity dynamic range was investigated. Consequently, we found trade-off relationship proposed novel training method overcome trade-off.
For portable and transparent electronic applications, supercapacitor (T-SC) is developed to act as an energy storing device. Because electric optical characteristics of the are strongly dependent on its thickness, all solid state T-SC was based sensitively controllable fabrication process. We were able attain optimum thickness for such that it exhibited excellent transparency well capacity. Thus, transparency-capacity dilemma, is, a increases with respect capacity while inversely...
We report a bypass resistive random-access memory (B-RRAM), which combines interface switching-based RRAM and an IGZO transistor, providing high compatibility with vertical NAND (V-NAND) structure for high-density memory. The analog switching properties of the WOx (RS) layer low off-state leakage current transistor (Tr) were utilized selector device. By utilizing reading between RS Tr layer, B-RRAM exhibits favorable characteristics operation voltage (~ 2 V), outstanding multibit (> 3 bits),...
A metal-insulator-metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for crossbar array, which can lead to high-density integration of advanced memory devices. Both switching and rectifying behavior were achieved based on sensitive control the filament size. Conduction mechanism analyses demonstrated that resulted from Schottky barrier at interface. From switching, including behavior, available array size 105-times larger.
To realize a hologram that is an effective method for implementing three-dimensional display, novel spatial light modulator (SLM) can generate the by interference and diffraction was developed based on transmittance changes. For high-resolution hologram, pixel size of SLM needs to be scaled down visible wavelength (380∼780 nm). However, conventional liquid crystal or micro-mirror-based has limitation in scaling down; few micrometers sized unit parts are required its operation mechanism....