A5004984086- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
Southeast University
2023
United Microelectronics (Taiwan)
2005
Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully unlock high-speed capabilities of GaN devices by integrating drive circuits and switches on same die. However, high operating frequency system puts forward higher requirements delay reliability level shifter, which serves as key component for IC. This work develops 200-V IC, adopting an efficient concise level-shifting solution to mitigate adversely affecting speed caused absence p-type in...
This paper presents a cutting-edge 65nm gate dielectrics technology featuring EOT at 1.06 nm (CET = 1.79nm), nFET Jg 8.5 A/cm/sup 2/, as well 10/spl mu/m/spl times/10/spl mu/m n/pMOSFET Vt of 0.078/0.148V. A novel room temperature plasma SiON is developed with unique capability to achieve higher top-to-bottom nitrogen concentration ratio than conventional SiON. In addition, peak moved toward top surface. Furthermore, EOT-Jg characteristics are improved by applying this process the post...