- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Graphene research and applications
- Semiconductor materials and devices
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Silicon Carbide Semiconductor Technologies
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Perovskite Materials and Applications
- ZnO doping and properties
- Autonomous Vehicle Technology and Safety
- Industrial Automation and Control Systems
- Industrial Technology and Control Systems
- Diamond and Carbon-based Materials Research
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Dots Synthesis And Properties
- Elevator Systems and Control
- Advanced Algorithms and Applications
- Advanced Computational Techniques and Applications
- Engineering Applied Research
- Ferroelectric and Negative Capacitance Devices
- Traffic control and management
- Video Surveillance and Tracking Methods
- Nausea and vomiting management
Nanjing Institute of Technology
2022-2024
Xi'an University of Technology
2022-2023
Yangzhou University
2021-2023
Fujian Medical University
2022-2023
Shanghai Children's Medical Center
2022
China Electronics Technology Group Corporation
2020
Institute of Semiconductors
2017-2019
Chinese Academy of Sciences
2017-2019
University of Chinese Academy of Sciences
2017-2019
Panzhihua University
2008-2019
The deep ultraviolet photodetectors based on 2D h-BN show a high on/off ratio of >10<sup>3</sup> and good spectral selectivity.
CsPbBr<sub>3</sub>/ZnO heterostructure photodetectors exhibit a high photoresponsivity because of the interfacial charge transfer from perovskite to ZnO.
Atomically thin hexagonal boron nitride (h‐BN) is gaining significant attention for many applications such as a dielectric layer or substrate graphene‐based devices. For these applications, synthesis of high‐quality and large‐area h‐BN layers with few defects strongly desirable. In this work, the aligned growth millimeter‐size single‐crystal domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition demonstrated. Under optimized conditions, up to 0.6 mm in edge...
The rational design of hierarchical hollow nanomaterials is critical significance in energy storage materials. Herein, dual-wall nanospheres (DWHNS) Sn/MoS2@C are constructed by situ confined growth and interface engineering. inner spheres Sn/MoS2 formed atomic soldering MoS2 nanosheets with liquid Sn at high temperature. formation mechanism the structure explored morphology evolutions different temperatures. DWHNS manifest abundant space specific surface area, which provides more support...
Abstract This study aimed to explore how autonomous vehicles can predict potential risks and efficiently pass through the dangerous interaction areas in face of occluded scenes or limited visual scope. First, a Dynamic Bayesian Network based model for real-time assessment is proposed, which enables observe surrounding risk factors, infer quantify at visually areas. The distance coefficient established integrate perception ability traffic participants into model. Second, predicted applied...
Hafnium disulfide (HfS2) has attracted significant interest because of the predicted excellent electronic properties superior to group VIB transition metal dichalcogenides. On other hand, atomically thin hexagonal boron nitride (h-BN) is an ideal dielectric substrate for optoelectronic applications 2D materials. Here, first time, we report direct growth high-quality atomic layered HfS2 on few-layer h-BN transferred SiO2/Si substrates by chemical vapor deposition. It was found that layers are...
Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors widely tunable bandgaps. Herein, for the first time, large-area synthesis of layered HfS2(1-x)Se2x alloys fully chemical on sapphire by vapor deposition reported, greatly expanding and enriching family TMDs semiconductors. The configuration high quality their crystal structure are confirmed various characterization techniques, bandgap these can be...
Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for first time we demonstrate epitaxial high-quality with controlled number on c-plane sapphire substrates by chemical vapor deposition (CVD). The exhibit an...
Two-dimensional homogeneous h-BCN atomic layers with a full range of compositions were synthesized by ion beam sputtering deposition.
Hybrid organic–inorganic perovskites have attracted intensive interest as active materials for high-performance photodetectors. However, studies on the electron transport layer (ETL) and its influence response time of photodetectors remain limited. Herein, we compare performances perovskite with TiO2 SnO2 ETLs, especially time. Both exhibit a high on/off current ratio 105, large detectivity around 1012 Jones, linear dynamic range over 80 dB. The SnO2-based photodiodes show ultrahigh rates 3...
Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered ideal candidate for integration with graphene other 2D materials. During the past years, great efforts have been devoted to research h-BN-based heterostructures, from fundamental study practical applications. In this review we summarize recent progress in synthesis, novel properties, potential applications especially...
Abstract Highly sensitive tactile sensors with long‐term stability and low power consumption are one of the key components for flexible electronics. Here, first time, fabrication VO 2 nanomembrane by epitaxial liftoff from ZnO sacrificial layer is reported. The wafer‐scale nanomembranes inherit structural electrical properties as‐grown films, wet transfer generates negligible influence on quality . Most importantly, giant responses to external strains found due release substrate clamping, a...
The mixed-cation lead mixed-halide perovskites can combine the advantages of constituents while avoiding their drawbacks, and they have been widely explored in solar cells. However, there are only few research studies on for photodetectors. In this work, we fabricate photodetectors based FA(1–x)CsxPb(BryI(1–y))3 perovskite reveal effect chemical composition crystal phase stability device performance FA0.7Cs0.3Pb(I0.8Br0.2)3 exhibit high specific detectivity, responsivity, excellent ambient...
Abstract Autonomous vehicles for the intention of human behavior estimated traffic participants and their interaction is main problem in automatic driving system. Classical cognitive theory assumes that completely reasonable when studying estimation interaction. However, according to quantum cognition decision as well practical cases, including often unreasonable, which violates classical theory. Based on theory, this paper studies pedestrian crossing. Through case analysis, it proved...
Motion planning of autonomous vehicles is still challenging in urban road environments with occlusions. In this work, the view safety, comfort and efficiency, we present a motion framework that enables to navigate safely Our solution mainly includes three parts: local path planning, trajectory speed planning. First, based on improved Artificial Potential Field generate path, then optimal solved S-L coordinate as reference line. Finally, potential risk probability occluded area incorporated...
Remote heteroepitaxy of single-crystal HfS<sub>2</sub> on sapphire through h-BN is first realized and can be extended to other 2D heterostructures.
Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully unlock high-speed capabilities of GaN devices by integrating drive circuits and switches on same die. However, high operating frequency system puts forward higher requirements delay reliability level shifter, which serves as key component for IC. This work develops 200-V IC, adopting an efficient concise level-shifting solution to mitigate adversely affecting speed caused absence p-type in...
Abstract The behavior intention estimation and interaction between Autonomous Vehicles (AV) human traffic participants are the key problems in Automatic Driving System (ADS). When classical decision theory studies implicitly assume that of is completely rational. However, according to booming quantum recent years actual cases, behaviors other often irrational violate assumptions cognitive theory. This paper explores decision-making problem two-car game scene based on compares it with current...
Monolithic integration has been demonstrated to be an ideal solution minimize the parasitics in GaN power IC. Nonetheless, current commercially process for IC is far less mature and only n-type HEMTs are available. Therefore, it difficult high voltage level shifters achieve speed. This work implements a shifter both small response time <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{d}V_{\mathrm{S}}/\text{dt}$</tex> noise immunity...
Abstract SnS 2 has a large volume change and unstable structure during charging discharging, seriously hindering its application in lithium‐ion batteries (LIBs) sodium‐ion (SIBs). Herein, ultrafine nanocrystals are confined to the inner wall of hollow mesoporous carbon nanospheres (HMCNS) by one‐step hydrothermal reaction for first time, forming special with buffer effect. After series electrochemical analyses, composite not only displays preeminent long cyclic stability excellent rate...
Abstract Background To evaluate the safety and effectiveness of different dosages intranasal Dexmedetomidine (DEX) in combination with oral midazolam for sedation young children during brain MRI examination. Methods Included this prospective single-blind randomized controlled trial were 156 aged from 3 months to 6 years weighing 4 20 Kg ASA I-II who underwent examination between March 2021 February 2022. Using random number table method, they divided into group A (using ug/kg DEX plus 0.2...