A5047688905- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Catalysts for Methane Reforming
- Radio Frequency Integrated Circuit Design
- Catalysis and Hydrodesulfurization Studies
- Catalytic Processes in Materials Science
- Geotechnical Engineering and Underground Structures
- Semiconductor Quantum Structures and Devices
- Catalysis for Biomass Conversion
- Geotechnical Engineering and Analysis
- Silicon Carbide Semiconductor Technologies
- Landslides and related hazards
- ZnO doping and properties
- Dam Engineering and Safety
- Soil and Unsaturated Flow
- Advanced Power Amplifier Design
- Advancements in Semiconductor Devices and Circuit Design
- Rock Mechanics and Modeling
- Metal and Thin Film Mechanics
- Carbon dioxide utilization in catalysis
- Microwave Engineering and Waveguides
- Tunneling and Rock Mechanics
- Membrane Separation and Gas Transport
- Catalysis and Oxidation Reactions
Shenyang University of Chemical Technology
2021-2025
Chinese Academy of Sciences
2012-2023
Southwest Jiaotong University
2021-2023
Institute of Urban Environment
2023
University of Chinese Academy of Sciences
2023
Institute of Microelectronics
2012-2022
University of Toyama
2015-2020
Abstract Mechanical properties and geometries of printed products have been extensively studied in metal 3D printing. However, chemical catalytic functions, introduced by printing itself, are rarely mentioned. Here we show that themselves can simultaneously serve as reactors catalysts (denoted self-catalytic reactor or SCR) for direct conversion C1 molecules (including CO, CO 2 CH 4 ) into high value-added chemicals. The Fe-SCR Co-SCR successfully catalyze synthesis liquid fuel from...
Low-pressure chemical vapor deposition (LPCVD) technique is utilized for SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust / AlGaN interface featuring high thermal stability and well-ordered crystalline structure achieved by a processing strategy “passivation-prior-to-ohmic” in HEMTs fabrication. Effective suppression surface-trap-induced current collapse...
High quality Al2O3 film grown by atomic layer deposition (ALD), with ozone (O3) as oxygen source, is demonstrated for fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Significant suppression Al–O–H and Al–Al bonds in ALD-Al2O3 has been realized substituting conventional H2O source O3. A high dielectric breakdown E-field 8.5 MV/cm good TDDB behavior are achieved a gate stack consisting 13-nm O3-Al2O3 2-nm H2O-Al2O3 interfacial...
This letter reports a 0.2- <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on an Si substrate passivated with Notation="TeX">${\rm AlN}/{\rm SiN}_{{\rm x}}$</tex> </formula> (4/20 nm) stack layer. The 4-nm-thick AlN was grown by plasma-enhanced atomic-layer-deposition. x}}$</tex></formula> -passivated HEMTs exhibit...
Abstract Heteroatom doping is a promising approach to improve the properties of carbon materials for customized applications. Herein, series Cu catalysts supported on boron‐doped nanotubes (Cu/ x B‐CNTs) were prepared hydrogenation dimethyl oxalate (DMO) ethanol. The structure and chemical characterized by XRD, TEM, N 2 O pulse adsorption, CO chemisorption, H temperature‐programmed reduction, NH 3 desorption, which revealed that boron into CNT supports improved dispersion, strengthened...
In this letter, we report high-performance enhancement-mode (E-mode) Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) fabricated with high-temperature low-damage gate recess technique. The is implemented by increasing the substrate temperature to 180 °C enhance desorption of chlorine-based etching...
Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the AlGaN barrier effectively suppressed by ALE recess, contributing a well-controlled recessed surface morphology. The lattice heterostructure also reflected significantly reduced leakage as well an invisible threshold voltage shift associated with traps. With 0.15-μm T-gate technology, high power-gain...
The butterfly-shaped Yb 4 compounds exhibited efficient catalytic activity for the cycloaddition of CO 2 with epoxides under mild conditions.
Abstract In this work, Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures with different Ti/Al relative thicknesses were fabricated and characterized. A contact thickness of 20/180 nm presented non-linear current–voltage response bumpy surface morphology, while a 20/120 demonstrated low resistance flat morphology. We verify the existence two electron transport mechanisms, namely carrier tunnelling direct link through TiN conductive pathway, by scanning transmission microscopy...
Ce promoted Cu/SiO<sub>2</sub> catalysts prepared by a urea-assisted gelation approach exhibited excellent catalytic activity and stability for DMO hydrogenation to ethanol.
A Ka-band AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with SiN gate dielectric grown by plasma-enhanced atomic layer deposition (PEALD) is demonstrated. The reverse leakage current in a controlled HEMT reduced about three orders of magnitude the PEALD-SiN, contributing to an improved breakdown voltage 92.5 V (source-drain separation 2.0 μm) fabricated MIS-HEMTs. MIS-HEMTs also feature small threshold hysteresis dc transfer and capacitance-voltage...
Benzene was synthesized from CO<sub>2</sub>and H<sub>2</sub>by a tandem catalysis reaction comprising CO<sub>2</sub>methanation and CH<sub>4</sub>aromatization.
An obvious increase in the gate leakage current has been commonly observed GaN HEMTs, after Plasma-enhanced chemical vapor deposition (PECVD) SiN passivation to obviously increase. This paper presents an Al/SiN stack layer structure. The high HEMTs caused by PECVD is distinctly reduced 2 3 orders of magnitude introducing a thin Al layer. It mainly attributed blocking and minimizing damage for (Al)GaN surface build-up luminance process then reducing trap density. TEM mapping SRIM software...
In this letter, a high-temperature (HT) gate recess technique is implemented into the fabrication of high-performance millimeter-wave AlGaN/GaN highelectron-mobility transistors (HEMTs). By virtue low damage feature HT recess, high extrinsic transconductance 422 mS/mm, three-terminal breakdown voltage 134 V with source-drain separation 2.4 μm, and remarkable Schottky leakage current 1.6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...