A5101788864- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Underwater Vehicles and Communication Systems
- Water Quality Monitoring Technologies
- Ship Hydrodynamics and Maneuverability
- Nanowire Synthesis and Applications
- Biomimetic flight and propulsion mechanisms
- Analog and Mixed-Signal Circuit Design
- Silicon and Solar Cell Technologies
- Molecular Junctions and Nanostructures
- Fluid Dynamics Simulations and Interactions
- Semiconductor Lasers and Optical Devices
- Radio Frequency Integrated Circuit Design
- Robotic Path Planning Algorithms
Chinese University of Hong Kong
2024
Tongji University
2024
Florence–Darlington Technical College
2002-2010
In this paper, we present in work a fairly complete process for developing an unmanned aerial–aquatic vehicle system, TJ-FlyingFish, which includes innovative design methodology of the platform and cross-medium localization, dynamics modeling, flight control systems. The development faces challenge how to manipulate locomotion effectively both water air presents substantial differences fluid properties. Additionally, there are difficulties perception navigation because discontinuity mediums....
Since heterojunction transistors have been invented, devices of various materials developed with excellent performance such as AlGaAs-GaAs, Si-GeSi, etc. Here, we report a new mode operation and call it the Heterojunction Vertical Dual Carrier Field Effect Transistor (HVDCFET). The HVDCFET its integrated circuit form HVDCFEIC advantage field effect transistor operation. mobility /spl mu/ is q/kT times greater than diffusion constant D. With same injection at source or emitter junction, drift...
The authors discuss the device physics and microwave performance of Vertical Dual Carrier Field Effect Transistor (VDCFET) VDCFET ICs. Si VDCFEIC have advantages very short effective channel, i.e. length less than 20 nm. GaAs further higher electron mobility. They can also be fabricated by molecular beam epitaxy or MOCVD process. This new mode operation opens up a wide application field with better performance, including microwave, switching, even System on chip (SOC) for sub-20 nm channel...
We have discovered and studied a new mode of operation transistors integrated circuits-dual carrier field effect (DCFETs) circuits (DCFEICs). In this paper we present the device physics theory some DC measurement results one type structure for our operation. show that, with mature SOI technology, lateral DCFET (LDCFET) is predicted to better performance than MOSFET. With proper design, cutoff frequency can be as high 6000 GHz an effective channel length 0.0368 /spl mu/m good microwave performance.
The principle of operation Si and SiGe resistor load flip flops ring oscillators n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification the is presented.
Source coupled logic (SCL) flip flops of SOI Si "vertical dual carrier field effect transistor" (VDCFET) with effective channel length 5-30nm have been designed, fabricated and measured. These development works are presented in three accompanied papers submitted to this conference. Presented paper the measured circuit performance source CPU switching circuits VDCFET 5-30 nm, including ring oscillators "exclusive OR" circuits.
32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal communication applications are presented.
22nm node Si SOI Coplanar "N Channel Vertical Dual Carrier Field Effect Transistors" (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.