A5103029238- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Superconducting Materials and Applications
- Wireless Power Transfer Systems
- Analog and Mixed-Signal Circuit Design
- RFID technology advancements
- T-cell and B-cell Immunology
- Photonic and Optical Devices
- melanin and skin pigmentation
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Power Amplifier Design
- Radiation Effects in Electronics
- Optical Network Technologies
- Advanced DC-DC Converters
- Cell Adhesion Molecules Research
- Particle accelerators and beam dynamics
- Semiconductor Lasers and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Cancer, Hypoxia, and Metabolism
Fuzhou University
2024
Industrial Technology Research Institute
2018
Institute of Microelectronics
2006-2016
Chinese Academy of Sciences
2016
ITRI International
2014
Beijing Microelectronics Technology Institute
2002-2006
An ultrahigh-frequency (UHF) radio frequency identification (RFID) tag antenna that can be placed on a metal surface with stable performances is proposed. It made of modified dipole two cylindrical grounds both ends. The not only enable the to roll freely reading performance, but also reduce antenna's length. proposed maintains small size diameter 10 mm (0.031λ) and length 45 (0.137λ). With an effective isotropic radiated power (EIRP) 4 W, experimental results demonstrate achieve maximum...
The experimental results of the cryogenic temperature characteristics on 0.18-μm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. current and capacitance for different operating conditions ranging from 300 K to 10 discussed. SOI MOSFETs at exhibit improved performance, as expected. Nevertheless, operation also demonstrates abnormal behaviors, such impurity freeze-out series resistance effects. In this paper, critical parameters...
Device physics and integrated device circuit simulation of "dual carrier field effect transistor" (DCFET) with effective channel length 5-30nm had been presented in C. Huang et al. (2004). Two dimensional approximation methods used these studies. Recently, two exact numerical simulations carried out for mesa type SOI switching "vertical dual (VDCFET). This method is this paper briefly. More details are reported R. Yang The comparison the results approximate physical shall be discussed shown...
We have discovered and studied a new mode of operation transistors integrated circuits-dual carrier field effect (DCFETs) circuits (DCFEICs). In this paper we present the device physics theory some DC measurement results one type structure for our operation. show that, with mature SOI technology, lateral DCFET (LDCFET) is predicted to better performance than MOSFET. With proper design, cutoff frequency can be as high 6000 GHz an effective channel length 0.0368 /spl mu/m good microwave performance.
Theoretical studies of switching and analog performance 0.6 volt 20 nm effective channel length Si ASIC dual carrier field effect transistor three dimensional transistors will be presented. It shown that these can fabricated by using mature semiconductor technology for linewidth greater than 130 nm.
The principle of operation building blocks 0.6 V Si and SiGe Vertical Dual Carrier Field Effect Transistor FPGA with effective channel length 5-20 nm is reviewed. Measured data on the experimental verification are presented.
A dynamic threshold MOSFET (DTMOS) was invented by Assaderaghi et al.(1994), connecting the gate to contact terminal. There are four ways connect terminal: (1) keep terminal floating; (2) source; (3) gate; and (4) take as a new input. We have designed fabricated simulated all of
This paper reviews recent developments in silicon photonic technology, and its advantages challenges optical networking applications. The also addresses the multiple functions that technology can presently address, as well integration on silicon.