We have measured the flexophotovoltaic effect of single crystals halide perovskites MAPbBr3 and MAPbI3, as well benchmark oxide perovskite SrTiO3. For perovskites, is found to be orders magnitude larger than for SrTiO3, indeed large enough induce photovoltages bigger band gap. Moreover, we find that in MAPbI3 additional a native bulk photovoltaic response switchable ferroelectric-like. The results suggest strain gradient engineering can powerful tool modify output even already...

It is a challenge to obtain highly tunable multifunctional performances in one ferroelectric system by simple approach meet the miniaturization, integration, and functionalization requirements of advanced electronic components. Herein, rare earth erbium (Er) modulated 0.9K0.5Na0.5NbO3-0.1Sr(1-x)ErxTi(1-x/4)O3, (0.9KNN-0.1ST: xEr) transparent-photoluminescent-ferroelectric energy storage ceramics are prepared solve this problem. The effect lattice distortion oxygen vacancies Er doping on...

Defect engineering constitutes a widely-employed method of adjusting the electronic structure and properties oxide materials. However, controlling defects at room temperature remains significant challenge due to considerable thermal stability In this work, facile room-temperature lithium reduction strategy is utilized implant into perovskite BaTiO3 (BTO) nanoparticles enhance piezocatalytic properties. As potential application, performance defective BTO examined. The reaction rate constant...

Triboelectrification, a process that transforms mechanical energy into electrical through friction, holds promise for eco-friendly wastewater treatment. This study delves the enhancement of tribocatalytic dye degradation using SrTiO₃, material notable its non-piezoelectric and centrosymmetric properties. The synthesis uni- bi-doped SrTiO₃ particles, achieved solid-state reaction at 1000 °C, results in high-purity cubic perovskite structure. Doping with Rhodium (Rh) Carbon (C) causes crystal...

The flexoelectric field generated by the strain gradient possesses capability to modify and manipulate various material characteristics. However, achieving abundant tunable gradients in thin films remains a formidable challenge. In this study, we successfully transferred SrRuO3 (SRO) free-standing single-crystalline onto flexible PDMS substrate using water-soluble sacrificial layer. By applying prestrain substrate, film exhibited modifiable one-dimensional (1D) wrinkled structure. Through...

Growing a 3D film on 2D substrate, process often referred to as quasi-van der Waals (vdW) epitaxy, is generally believed involve both chemical and vdW interactions at the interface. To date, competition between interface has yet be established. In this work, we demonstrate that activity of deposited species crucial for determining structure 3D/2D heterointerface. During pulsed laser deposition, SrTiO3 (STO) can adjusted by controlling oxygen partial pressure. Therefore, relative...

The direct measurement of flexoelectric coefficients in epitaxial thin films is an unresolved problem, due to the clamping effect substrates which induces a net strain (and hence parasitic piezoelectricity) addition gradients and flexoelectricity. Herein, we propose demonstrate use van der Waals epitaxy as successful strategy for measuring intrinsic (clamping-free = films. We have made, measured, compared ${\mathrm{BaTiO}}_{3}$ ${\mathrm{SrTiO}}_{3}$ film capacitor heterostructures grown...

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites has not been clearly understood until now. A switchable diode-like RS behavior in MAPbBr 3 single crystals using Au (or Pt) symmetric electrodes is reported. Both the high resistance state (HRS) and low (LRS) are electrode-area dependent light responsive. We propose an electric-field-driven inner p-n junction accompanied by a trap-controlled space-charge-limited conduction (SCLC) to explain this crystals.

Complex micro-architectured metamaterials exhibit unique elastic and dielectric properties as well ultrahigh piezoelectric responses.

We report a thickness-dependent flexoresistance effect caused by strain gradient in SrTiO3 (STO) epitaxial thin films. The STO was induced using an atomic force microscope diamond-coated tip. depolarization field the changes electrical state of film, resulting decrease resistance films 4–6 orders magnitude. By testing current–voltage (I–V) curves with different thicknesses, it is found that behavior obvious thickness dependent: thicker higher threshold to trigger film enter highly conductive...

Flexoelectric effect describes the electromechanical coupling between strain gradient and its internal polarization in all dielectrics. Despite this universality, resulting flexoelectric field remains small at macroscopic level. However, nanosystems, size-dependent of flexoelectricity becomes increasingly significant, leading to a notable that can strongly influence material’s physical properties. This review aims explore specifically nanoscale. We achieve by examining gradients generated...

Flexoelectricity of semiconductors usually exhibits large flexoelectric coefficients due to their significantly enhanced surface piezoelectricity caused by symmetry breaking. In this Letter, we reported a general paradigm tune the semiconductor flexoelectricity through interface engineering. We selected Nb-SrTiO3 (Nb-STO) single crystals as targets and tuned depositing TiO2-terminated SrO-terminated ultra-thin BaTiO3 (BTO) films. The results suggested that deposition films Nb-STO can induce...

The advantages of van der Waals epitaxy have attracted great interest because they can meet the requirements that conventional struggles to satisfy. weak adatom-substrate interaction without directional covalent bonding drastically relaxes lattice matching limitation. However, also leads ineffectiveness in directing crystal growth structure, limiting it one orientation epitaxial growth. In this work, we propose a domain strategy guide perovskite-type on 2D substrates, and demonstrated...

Rapid heating is highly sought-after for compositional control in the sintering-annealing process of materials containing volatile elements. Although several innovative approaches have been reported, suitable processes rapid annealing thin films are still very rare. Herein, we develop a high-temperature method thin-film preparation through employing an indium tin oxide (ITO)/mica-based flexible transparent heater (FTH). The ITO/mica FTH shows extremely fast thermal response (2 s), high...

The epitaxial growth of Ruddlesden-Popper type Sr3Ru2O7 thin films remains a challenge as the temperature required for typical pulsed laser deposition (PLD) process can be high 1100 °C. In this study, quality were obtained using PLD from single SrRuO3 target. By adjusting oxygen partial pressure, structure underwent phase transition to due creation and development ruthenium vacancies. Notably, first time, high-quality with good crystalline successfully grown at low (T=680 °C) on SrTiO3 substrates.

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr 3 single crystals using Au (or Pt) symmetric electrodes reported. Both the high resistance state (HRS) and low (LRS) are electrode-area dependent light responsive. We propose electric-field-driven inner p-n junction accompanied by trap-controlled SCLC conduction to explain this crystals.

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr 3 single crystals using Au (or Pt) symmetry electrodes reported. Both the high resistance state (HRS) and low (LRS) are electrode-area dependent light responsive. We propose electric-field-driven inner p-n junction accompanied by interface trap-controlled SCLC to explain this crystals.

Halide perovskites have outstanding photovoltaic properties which been optimized through interfacial engineering. However, as these materials approach the limits imposed by physics of semiconductor junctions, it is urgent to explore alternatives, such bulk effect, whose physical origin different and not bound same limits. In this context, we focus on flexo-photovoltaic a type effect that was recently observed in oxides under strain gradients. We measured MAPbBr3 MAPbI3 crystals bending found...