A5102770189- Physics of Superconductivity and Magnetism
- Topological Materials and Phenomena
- Iron-based superconductors research
- ZnO doping and properties
- Advanced Condensed Matter Physics
- Finite Group Theory Research
- Inorganic Fluorides and Related Compounds
- GaN-based semiconductor devices and materials
- Superconducting Materials and Applications
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advanced Chemical Physics Studies
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Inorganic Chemistry and Materials
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Diamond and Carbon-based Materials Research
- 2D Materials and Applications
- Catalysis and Oxidation Reactions
- High voltage insulation and dielectric phenomena
- Silicon Carbide Semiconductor Technologies
- Gas Sensing Nanomaterials and Sensors
- Surface and Thin Film Phenomena
- Electron and X-Ray Spectroscopy Techniques
Nagoya University
1981-2024
The University of Tokyo
1965-2024
Tokyo University of Science
2023
NOK Corporation (Japan)
2023
Kobe University
2022
Chemicals Evaluation and Research Institute
2000-2021
Lintec Corporation (Japan)
2011-2014
Tokyo Polytechnic University
2006-2009
Georgia Institute of Technology
2008
Shizuoka University
2001
Iron-chalcogenide superconductors have emerged as a promising Majorana platform for topological quantum computation. By combining band and superconductivity in single material, they provide significant advantage to realize isolated zero modes. However, iron-chalcogenide superconductors, especially Fe(Te,Se), suffer from strong inhomogeneity which may hamper their practical application. In addition, some iron-pnictide been demonstrated surface states, yet no mode has observed inside vortices,...
The opening of an energy gap in the electronic structure generally indicates presence interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors spontaneous formation electron-hole pairs, so called excitons, excitonic at Fermi level. Excitonic host unique phenomena associated pair excitations. However, there is still no recognized single-crystal material order, which is, therefore, awaited condensed matter physics. Here, we show that...
Abstract We report on a single‐layer organic memory device made of poly( N ‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios 10 4 . This level performance could be achieved by modifying the electrodes some Ag‐NDs that act as trapping sites, reducing current in OFF state. Temperature dependence electrical characteristics suggest low‐resistance state can attributed to Schottky charge tunnelling through...
Abstract Power devices are operated under harsh conditions, such as high currents and voltages, so degradation of these is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward stress to GaN p–n junctions. In the present study, we identified type threading dislocations that provide pathways for this current. diodes were grown by metalorganic vapor phase epitaxy on freestanding GaN(0001) substrates with dislocation...
The changes in the PD /spl Phi/-q-n pattern and current shape due to degradation of insulating materials have been investigated with a fast digital oscilloscope measurement system. In order verify effect gas change, volume void was observed pattern. It showed that change maximum magnitude is related according ageing time. could be classified into five stages. At stage 3 for example, which had "rabbit-like pattern", first each half-cycle large 100 mA narrow width. 5, "turtle-like slow...
Abstract A very low stacking-fault, energy f.c.c. alloy (Ag-15 at.% Al) has been irradiated at 423 K with 800 keV electrons in a HVEM. Observations of the behaviour jog-containing dissociated dislocations near-edge character during irradiation were made using weak-beam method electron microscopy. It is shown that extended jogs move non-conservatively along edge by absorbing point defects, presumably an excess interstitials, irradiation.
\S 1. Introduction
On Gaussian sums attached to the general linear groups over finite fields by Takeshi
Abstract The iron-based superconductors (FeSCs) have recently emerged as a promising single-material Majorana platform by hosting isolated zero modes (MZMs) at relatively high temperatures. To further verify its nature and move forward to build topological quantum qubits, it is highly desirable achieve tunability for MZMs on homogeneous FeSCs. Here, with an in-situ strain device, we can controllably create the surface of stoichiometric superconductor LiFeAs altering chemical potential....
This work examined reverse leakage currents in GaN p–n junctions nearly free of dislocations. Diodes with shallow bevel mesas and breakdown voltages (BVs) the range 130–1000 V exhibited avalanche at designed voltages. Significant were observed response to bias values far below BVs a weak effect temperature was also evident. The data explained based on direct band-to-band tunneling (BTBT). BTBT current dominant those devices having several hundred volts but detection limit case 1000 class diode.
Reliability tests involving the application of high electrical stresses were employed to assess GaN-based vertical p-n junctions fabricated on freestanding GaN substrates with threading dislocation densities less than 104 cm−2. Electric field crowding at device edges was eliminated by employing a shallow bevel mesa structure, thus allowing an evaluation reliability internal junctions. The diodes exhibited reproducible avalanche breakdown characteristics over temperature range 25–175 °C. No...
Partial Discharges (PD) cause the degradation of insulating materials and govern lifetime high-voltage power apparatus cables. Therefore, it is important to understand PD behaviors in aging process. In this paper, partial discharges their current shapes low-density polyethylene (LDPE) with a void were measured. The /spl phi/-q-n pattern shape changed remarkably time related each other. They depended not only upon size voids but also on degree degradation. This suggests possibility insulation...
Abstract We have developed ultra‐high gas barrier films fabricated by wet coating technologies of barrier‐precursor and plasma assisted surface modifications. Owing to efficient coverage process, our achieved 10 −5 g·m −2 ·day −1 under 40 °C, 90%RH only a few layer stack the layers.
Let Λ be the Leech lattice which is an even unimodular with no vectors of squared length 2 in 24-dimensional Euclidean space R 24 . Then Mathieu Group M a subgroup automorphism group .0 and action on induces natural permutation representation orthogonal basis For , let m sublattice invariant under m:
A criterion for the existence of a non-trivial partition finite group with applications to reflection groups
This is due to K Harada (cf.[4, Lemma 5
In this study, we measured phase-resolved partial discharge (PD) patterns and PD current shapes from low-density polyethylene (LDPE) specimens with IGI (insulator/air gap/insulator) structure. The relationship between the changes in pattern shape was investigated. effects of void size on were also discussed.
We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of newly discovered oxypnictide superconductor, NdFeAsO_{1-x}F_x. find a well-defined Fermi surface that consists large hole pocket at Brillouin zone center and smaller electron in each corner zone. The overall location shape agrees reasonably well with calculations. band dispersion is quite complicated many flat bands located just below chemical potential. observe superconducting gap 20 meV,...