- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Advanced Semiconductor Detectors and Materials
- TiO2 Photocatalysis and Solar Cells
- Copper-based nanomaterials and applications
- Solid-state spectroscopy and crystallography
- ZnO doping and properties
- Image Processing and 3D Reconstruction
- Semiconductor materials and devices
- Cultural Heritage Materials Analysis
- Archaeological Research and Protection
- Intermetallics and Advanced Alloy Properties
- Quantum Dots Synthesis And Properties
- Catalytic Processes in Materials Science
- 2D Materials and Applications
- Crystal Structures and Properties
- Electrical Contact Performance and Analysis
- Nonlinear Optical Materials Studies
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Adhesion, Friction, and Surface Interactions
- Metal and Thin Film Mechanics
Kiel University
2023-2025
Fachhochschule Kiel
2024
University of Florida
2007
In recent years, defective TiO
This study reports the synthesis and crystal structure determination of a novel CrTe
The Cover Feature abstractly depicts the influence of a mixture argon (symbolized by pink) and hydrogen blue) on TiO2 pellet sample in hydrogenation process. blue cylinder center shows defective with an enhanced photocatalytic activity. green yellow corona around embodies this grey ellipse to right induced defects; Ti3+ site oxygen vacancy Vo. More information can be found Research Article S. Veziroglu, O. C. Aktas co-workers.
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Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory applications. The compounds contain a huge number of vacancies that play important roles in structural and electronic transitions. Control disorder understanding the transformations GST great importance design reliability phase change devices. In this work, situ heating atomic-resolution transmission electron microscopy is used to observe from vacancy disordered (fcc) layered ordered (vacancy-ordered (vo)) van...
Abstract not Available.