Li Shi

ORCID: 0009-0007-8985-1774
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About
Contact & Profiles
Research Areas
  • Advanced Thermoelectric Materials and Devices
  • Thermal properties of materials
  • Semiconductor materials and interfaces
  • 2D Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Graphene research and applications
  • Heavy Metal Exposure and Toxicity
  • Electrochemical Analysis and Applications
  • Effects and risks of endocrine disrupting chemicals
  • Analytical Chemistry and Sensors
  • Nanowire Synthesis and Applications
  • Mercury impact and mitigation studies
  • Molecular Sensors and Ion Detection
  • Advanced Semiconductor Detectors and Materials
  • Advanced Thermodynamics and Statistical Mechanics
  • MXene and MAX Phase Materials
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • Heusler alloys: electronic and magnetic properties
  • Microfluidic and Capillary Electrophoresis Applications
  • Surface and Thin Film Phenomena
  • Supramolecular Chemistry and Complexes
  • nanoparticles nucleation surface interactions
  • Engineering and Environmental Studies
  • Carbon Nanotubes in Composites

Jiaxing University
2024-2025

Chongqing University
2023-2024

Huzhou University
2023

Shanxi University
2012-2014

Thermoelectric conversion technology is increasingly important for sustainable energy, particularly in transforming waste heat into electricity. In this study, we explore the thermoelectric properties of three novel two-dimensional materials, monolayer $R\text{TeCl}$ (with $R=\text{La},\text{Pr},\text{Nd}$), using density-functional theory and semiclassical Boltzmann transport theory. These materials are stable can be easily exfoliated from bulk structures due to their low cleavage energy....

10.1103/physrevapplied.21.054026 article EN Physical Review Applied 2024-05-13

Recently, two-dimensional (2D) ternary monolayer MSi2N4 (M = Mo, W) was synthesized by chemical vapor deposition. However, has an indirect bandgap, which seriously hinders its application in optoelectronic devices. Herein, we propose two MSi2N4/InS van der Waals heterojunctions (vdWHs) possessing type-II band alignments first-principles. Our results indicate that these vdWHs achieve indirect-to-direct bandgap transition and exhibit fascinating optical absorption spectra the range of visible...

10.1063/5.0167993 article EN Applied Physics Letters 2023-09-25

Recently, two-dimensional (2D) layered polarized ZnIn2S4 nanosheets have been successfully synthesized in experiments. However, the monolayers are unstable air, which hinders their practical applications. Therefore, this work, we proposed a new family of nonpolarized (β2-phase) ZnX2Z4 (X = In, Al, and Ga; Z S, Se, Te) by first-principles. It is confirmed that energies β2-phase lower than those β-phase monolayers. Moreover, these not only desirable indirect band gaps but also high electron...

10.1039/d3cp00594a article EN Physical Chemistry Chemical Physics 2023-01-01

In response to the pressing energy crisis, thermoelectric materials have emerged as promising solutions for converting waste heat into electrical energy. Meanwhile, low-dimensional with micro/nanoscale dimensions are playing an increasingly important role in chip thermal management and self-powered wearable electronic devices. This work investigates properties of three SixGey monolayers, predicted through approach that combines advantages silicene germanene. Utilizing density functional...

10.1021/acsanm.4c05475 article EN ACS Applied Nano Materials 2024-12-23

Two-dimensional (2D) materials with high mobility and suitable direct band gap can be candidates for photoelectric materials. However, some ideal 2D are easily oxidation in ambient conditions. Herein, we have systematically explored a new ternary layered material by firstprinciples calculations, named XYO2 (X=Li, Na; Y=Al, Ga, In). These monolayers possess desirable gaps, revealing fine optical adsorption efficiency due to the spectra covering visible ultraviolet light. Importantly, NaAlO2...

10.2139/ssrn.4646055 preprint EN 2023-01-01
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