Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the disordered arrangement of a high concentration oxygen vacancy defects. In this study, were prepared by electrospinning, effects orientation Y2O3 passivation FET systematically investigated. The results indicate that...

The development of photoelectric synaptic transistors (PSTs) using visible light-driven mimicking behaviors represents a key advancement toward biomimetic visual systems. This study proposes PST based on bilayer indium-gallium-zinc-oxide (IGZO) homojunctions with tunable gallium ratios. By optimizing the content, oxygen vacancy concentrations in channel were precisely controlled, suppressing deionization processes and enhancing device performance. IGZO homojunction demonstrated outstanding...

Photoelectric synaptic transistors (PSTs) exhibit tremendous potential in artificial intelligence systems, as they the ability to combine neuromorphic computing and visual perception neural functions. For information...

As a promising alternative to conventional computing paradigms, the neuromorphic has been demonstrated by using various artificial synaptic devices. Due excellent capability for conductance modulation, ferroelectric thin film transistors (FeTFTs) have shown as one of candidates In this work, FeTFTs based on lead zirconate titanate (PZT) films were integrated fully solution process. Prior integration FeTFTs, lanthanum nickelate (LNO) was prepared seed layer. The introduction LNO improve...

Self-assembled FePt/MnO nanoparticles with different morphology and size were synthesized a polyol process. With the MnO coating, FePt exhibit high blocking temperature magnetic moment. The low-temperature hysteresis loop of can be shifted through AFM pinning shell. aggregation during L10 phase transformation significantly decreased by coating

Brain-inspired neuromorphic computing has garnered significant attention for going beyond the constraint of von Neumann architecture. To emulate human brain functions, various artificial synaptic devices have been proposed. Due to high reliability and CMOS compatibility, transistors based on charge trapping (CT) mechanism considered be one most promising candidates. However, CT were fabricated by costly vacuum-based techniques. In this report, a fully solution-driven strategy, InZnO...

We have investigated the effective magnetic anisotropy in CVD-grown epitaxial $\mathrm{Cr}{\mathrm{O}}_{2}$ thin films and ${\mathrm{Cr}}_{2}{\mathrm{O}}_{3}∕\mathrm{Cr}{\mathrm{O}}_{2}$ bilayers using resonant radio-frequency transverse susceptibility (TS). While is a highly spin polarized ferromagnet, ${\mathrm{Cr}}_{2}{\mathrm{O}}_{3}$ known to exhibit magnetoelectric effect orders antiferromagnetically just above room temperature. In $\mathrm{Cr}{\mathrm{O}}_{2}$, measured values for...

The development of large-scale manufacturing and cost-saving artificial synaptic devices is great significance for the realization hardware neural networks. In this work, In2O3 transistors with boron ion-doped ZrOx as dielectric layer were fabricated by solution process. large counterclockwise hysteresis indicates that nonvolatile memory capacity was improved ions doping. Typical functions including excitatory postsynaptic current, paired pulse facilitation, high-pass filtering properties...

We report on the observation of a dramatically increased extraordinary Hall Effect in Pt-based ferromagnetic alloy thin films with varying composition and thickness that were deposited using magnetron sputtering. slope as high 76.8 μΩ cm/T has been obtained at 110 K 22.6 300 K. Excellent sensitivity, linearity, small temperature coefficient have achieved particular composition, Fe35Pt65, for film 10 nm. The optimized Fe–Pt compare favorably commonly used semiconductor sensors.

The precessional magnetization dynamics of a chromium dioxide (100) film is examined in an all-optical pump-probe setup. frequency dependence on the external field used to extract uniaxial in-plane anisotropy constant. damping shows strong frequency, but also laser pump fluence, which revealed as important experimental parameter this work: above certain threshold further channels energy dissipation open and increases sharply. This behavior might stem from spin-wave instabilities.

In this study, we examine the possibility of electrode-barrier interactions in modifying electrical characteristics and current switching behavior a trilayer junction with silver sulfide as barrier layer. A series Al–Ag2S–Ag crossbar is fabricated by thermal evaporation technique varying thickness (30–110Å) Current-voltage junctions are studied function layer thickness, which can suggest any role that interaction may have tuning their behavior. To fully understand performance layer,...

Previous photoelectron spectroscopy studies of CrO2 have found either no density states or a very low at the Fermi level, suggesting that is semiconductor semi-metal. This in contradiction to calculations predict should be half-metallic ferromagnet. Recently, techniques been developed grow high-quality epitaxial films on TiO2 substrates by chemical vapour deposition. We present measurements CrO2(110)/TiO2(110) and CrO2(100)/TiO2(100) grown using CrO3 precursor. In addition,...

Magnetization dynamics and field dependent magnetization of different devices based on 25-30 nm thick Permalloy (Py) films: such as single Py layers (Py/MgO; Py/CoFeB/Al2O3) inserted a magnetic layer in tunnel junctions (Py/CoFe/Al2O3/CoFe; Py/CoFeB/Al2O3/CoFe; Py/MgO/Fe) have been extensively studied within temperature range between 300 K down to 5 K. The dynamic response was investigated the linear regime measuring ferromagnetic resonance using broadband vector network analyzer technique....

Chemically synthesized FePt nanoparticles were coated with nonmagnetic SiO2 and MnO shells by sol-gel polyol processes. TEM images show that the FePt/SiO2 exhibit a thick spherical shell. The size morphology of shell can be controlled changing reaction temperature, molar ratio surfactants/Mn(acac)2, and/or concentration precursor. either spherical-like or cubic-like, depending on whether surfactants/Mn(acac)2 is less than larger 2. From XRD measurements, core/shell 3D random crystallographic...

As the basic and essential unit of neuromorphic computing system, artificial synaptic devices exhibit great potential in accelerating high-performance parallel computation, intelligence, adaptive learning.Among them, electrolyte-gated transistors (EGSTs) have received increasing attention as next generation owing to its controllable channel conductance.The abilities simulating short-term plasticity (STP) long-term (LTP) neural synapses.However, most EGSTs short persistence for LTP their...

The stimulation of synaptic behavior through artificial devices is considered as the first step toward hardware implementation neuromorphic computing systems. However, transistors based on solid-state oxides are currently underexploited. In this article, In2O3 PrOx/ZrO2 bilayer dielectric fabricated by spin coating were proposed, and functions realized using trapping detrapping charges at trap centers in PrOx. By modulating presynaptic spiking, behaviors, including excitatory/inhibitory...

The high-performance flexible thin-film transistors (TFTs) based on In 2 O 3 /Al were fabricated by a nanofiber-to-film (NTF) process, and the excellent mechanical stability reproducibility of device demonstrated.

An In 2 O 3 synaptic transistor based on lithium doped Gd (LiGdO) solid electrolyte was fabricated by a solution process, its basic functions were realized and application in neuromorphic computing demonstrated.