A5103393082- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Perovskite Materials and Applications
- GaN-based semiconductor devices and materials
- Neural Networks and Reservoir Computing
- Copper-based nanomaterials and applications
- Photonic and Optical Devices
- Petroleum Processing and Analysis
- Advanced Memory and Neural Computing
- Chalcogenide Semiconductor Thin Films
- Non-Destructive Testing Techniques
- Corrosion Behavior and Inhibition
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Quantum Dots Synthesis And Properties
- Thin-Film Transistor Technologies
Qingdao University
2024-2025
Institute of Solid State Physics
2006-2007
Chinese Academy of Sciences
2006-2007
Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the disordered arrangement of a high concentration oxygen vacancy defects. In this study, were prepared by electrospinning, effects orientation Y2O3 passivation FET systematically investigated. The results indicate that...
The development of photoelectric synaptic transistors (PSTs) using visible light-driven mimicking behaviors represents a key advancement toward biomimetic visual systems. This study proposes PST based on bilayer indium-gallium-zinc-oxide (IGZO) homojunctions with tunable gallium ratios. By optimizing the content, oxygen vacancy concentrations in channel were precisely controlled, suppressing deionization processes and enhancing device performance. IGZO homojunction demonstrated outstanding...
Zn 1 − x Cd O films (0⩽x⩽0.179) were grown on Si (001) substrates at 750°C with a radio-frequency reactive magnetron sputtering method. Difference between the photoluminescence (PL) spectra taken room temperature (RT) and 12K is reported deduced to be result of PL emission from ZnCdO phases wurtzite zinc blende structures. It also found that RT intensity in inverse proportion carrier concentration films. incorporation results transform conductivity p type n decrease mobility.