A5089632319- Semiconductor Quantum Structures and Devices
- Thermal properties of materials
- Graphene research and applications
- Quantum and electron transport phenomena
- Carbon Nanotubes in Composites
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Heat Transfer and Optimization
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Thermal Radiation and Cooling Technologies
- Electronic Packaging and Soldering Technologies
- Semiconductor Lasers and Optical Devices
- 3D IC and TSV technologies
- Photonic and Optical Devices
- Supercapacitor Materials and Fabrication
- Spectroscopy and Laser Applications
- Quantum Dots Synthesis And Properties
- Nanotechnology research and applications
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Advanced Thermoelectric Materials and Devices
- Diamond and Carbon-based Materials Research
- Advancements in Battery Materials
Beijing Institute of Technology
2025
Zhejiang Police College
2024
Shanghai Electric (China)
2024
Northeastern University
2012-2023
Nanchang University
2023
Universidad del Noreste
2023
Henan Forestry Vocational College
2023
Chalmers University of Technology
2011-2022
Jiangxi University of Technology
2022
Jiangxi University of Science and Technology
2022
Almost 15 years have gone ever since the discovery of graphene as a single atom layer. Numerous papers been published to demonstrate its high electron mobility, excellent thermal and mechanical well optical properties. We recently seen more applications towards using in commercial products. This paper is an attempt review summarize current status research properties other 2D based materials including manufacturing characterization techniques their applications, especially electronics power...
Abstract The high thermal conductivity of graphene and few-layer undergoes severe degradations through contact with the substrate. Here we show experimentally that management a micro heater is substantially improved by introducing alternative heat-escaping channels into graphene-based film bonded to functionalized oxide amino-silane molecules. Using resistance temperature probe for in situ monitoring demonstrate hotspot was lowered ∼28 °C chip operating at 1,300 W cm −2 . Thermal probed...
It is demonstrated that a graphene‐based film (GBF) functionalized with silane molecules strongly enhances thermal performance. The resistance temperature detector results show the inclusion of doubles heat spreading ability. Furthermore, molecular dynamics simulations conductivity ( κ ) GBF increased by 15%–56% respect to number density compared nonfunctionalized graphene substrate. This increase in attributed enhanced in‐plane conduction GBF, resulting from simultaneous between and...
Heat dissipation is one of the factors limiting continuous miniaturization electronics. In study presented in this paper, we designed an ultra-thin heat sink using carbon nanotubes (CNTs) as micro cooling fins attached directly onto a chip. A metal-enhanced CNT transfer technique was utilized to improve interface between CNTs and chip surface by minimizing thermal contact resistance promoting mechanical strength microfins. order optimize geometrical design microfin structure, multi-scale...
Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200 instead of direct CNT growth in the normally requiring high temperature. A vapor densification method also applied to densify as-grown forests, which allows for packing more CNTs reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility...
Graphene oxide based coating significantly enhances the proliferation of osteoblastic cells and shows toxicity towards bacterial cells.
Stacking of silicon chips with carbon nanotube (CNT)-based through-silicon vias (TSVs) is experimentally demonstrated. Polymer filling used to improve the transfer quality CNTs into pre-etched holes. Special hexagonal are designed achieve high aspect ratio (10:1) CNT vias. TSVs filled closely packed show a highly linear dc I-V response. The proposed process works at room temperature, which makes it compatible existing device fabrication flow.
For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, hundreds tiny CNTs, were uniformly by copper through electroplating, and ratios as 300:1 obtained. The resistivity nanomaterial was found to be low...
The need for electrically insulating materials with a high in-plane thermal conductivity lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised power dissipating such as an spreader material laterally redistributing the from hotspots caused by locally excessive flux densities. In this study, two types based test structures have been assembled and evaluated...
A sensor device based on a copper-based nanocomposite structure is achieved and presents excellent sensing performance for glucose.
An indium-assisted ultrafast carbon nanotube (CNT) transfer method with a yield rate over 90% is described. Metal-coated as-transferred CNT structures exhibit excellent electrical performance that at least one order of magnitude better than the previously published results. Shear test results show adhesion between CNTs and substrate greatly improved flexibility obtained after process.
A template-assisted method that enables the growth of covalently bonded three-dimensional carbon nanotubes (CNTs) originating from graphene at a large scale is demonstrated. Atomic force microscopy-based mechanical tests show CNT structure can effectively distribute external loading throughout network to improve strength material.
We introduce a set of boundary conditions for electron envelope functions at GaAs/AlAs heterointerfaces so as to take into account \ensuremath{\Gamma}-${\mathit{X}}_{\mathit{z}}$ and ${\mathit{X}}_{\mathit{x}\mathrm{\ensuremath{-}}}$${\mathit{X}}_{\mathit{y}}$ valley mixings in the effective-mass method. The proposed enable one obtain dependence mixing effect upon parity monolayer numbers AlAs GaAs layers, agreement with empirical model calculations. tunneling probability across...
Convolutional neural networks provide a state-of-the-art approach to the development of froth image sensors. In this study, it is shown that pretrained network architecture, namely VGG16, can be used obtain significant improvements in However, training these computationally demanding and require large data sets may not readily available. These problems circumvented by making use transfer learning partial retraining network. Likewise, minor modification architecture also expedite models. This...
During the last decade, graphene foam emerged as a promising high porosity 3-dimensional (3D) structure for various applications. More specifically, it has attracted significant interest solution thermal management in electronics. In this study, we investigate possibility to use such porous materials heat sink and container phase change material (PCM). Graphene (GF) was produced using chemical vapor deposition (CVD) process attached test chip sintered silver nanoparticles (Ag NPs). The...
Abstract With increasing demands of high-performance and functionality, electronics devices generate a great amount heat. Thus, efficient heat dissipation is crucially needed. Owing to its extremely good thermal conductivity, graphene an interesting candidate for this purpose. In paper, two-step temperature-annealing process fabricate ultrahigh conductive assembled films (GFs) proposed. The conductivity the obtained GFs was as high 3826 ± 47 W m −1 K . Extending time high-temperature...