A5066297543- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Liquid Crystal Research Advancements
- High-Temperature Coating Behaviors
- Catalytic Processes in Materials Science
- Thin-Film Transistor Technologies
- Microwave Dielectric Ceramics Synthesis
- Ferroelectric and Piezoelectric Materials
- Advanced materials and composites
- Aluminum Alloys Composites Properties
- Multiferroics and related materials
- Optical Coatings and Gratings
- Nonlinear Optical Materials Studies
- Metallurgical Processes and Thermodynamics
- Advanced ceramic materials synthesis
- Electrocatalysts for Energy Conversion
- Fuel Cells and Related Materials
- Perovskite Materials and Applications
- Erosion and Abrasive Machining
- Distributed Sensor Networks and Detection Algorithms
- Non-Destructive Testing Techniques
- Advanced battery technologies research
- Semiconductor materials and interfaces
Chinese Academy of Sciences
2013-2024
National University of Defense Technology
2024
Shanghai Advanced Research Institute
2019-2024
Sinopec (China)
2024
Institute of Electrical Engineering
2024
University of Science and Technology Liaoning
2023
Institute of Space and Astronautical Science
2023
Shanghai Institute of Microsystem and Information Technology
2017-2022
University of Chinese Academy of Sciences
2017-2022
Zhengzhou University
2015
With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) the switching matrix metallic silver conducting pathway. The devices demonstrated ON/OFF ratio ∼107 ultra-fast speed ∼100 ps which is among fastest in literature. also possess long time over 2 years record endurance ∼6 × 106 cycles for all Re-RAMs...
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with potential to bridge the gap between traditional volatile and fast dynamic RAMs slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array switching layer clubbed silver aluminum contacts. NW made of three types methyl ammonium lead perovskites (MAPbX3; X =...
Abstract Phase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation these at elevated temperatures, which critical efficient processing reliable storage data full capacity. Herein, we report novel device Ta-doped antimony telluride (Sb 2 Te), exhibits both characteristics excellent high-temperature...
Carbon (C)-doped Ge2Sb2Te5 material is a potential candidate in phase change random access memory (PCRAM) because of its superb thermal stability and ultrahigh cycle endurance. Unfortunately, the role distribution evolution C-dopant still not fully understood, especially practical industrial devices. In this report, with aid advanced spherical aberration corrected transmission electron microscopy, mechanism microstructure manipulated by clearly defined. The grain-inner C atoms distinctly...
Phase change memory based on Ta-GST exhibits superior thermal stability and reliability, so it is expected to be used in high-temperature applications.
The interaction between light and silver nanowires (Ag NWs) in a thin film is simulated by solving Maxwell's equations numerically. Time-harmonic inverse iterative method implemented to overcome the problem of negative permittivity silver, which makes classical finite-difference time-domain iteration unstable. validated showing correspondence plasmonic resonance an Ag NW from two dimensional simulation analytical solution. In agreement with previous experimental studies, results show that...
A novel selector exhibits a high drive current of 10 mA by combining high-mobility Ag with highly defective GeTe<sub>8</sub>.
In this work, the high throughput sample of Cu-0.6Cr-xZr (x = 0–0.18 wt%) alloy was prepared using spark plasma sintering. The influence Zr concentration on microstructure and properties Cu alloys were investigated through advanced characterization technique. findings reveal that element in exhibits a gradient distribution after aging treatment at 500 °C. Some elements precipitate as Cu2Zr phase certain 0.14 wt%. alloy's hardness increases, while its conductivity decreases with increasing,...
The performance of wireless sensor network (WSN) continues to change over time, and it is required track the WSN accurately. In this paper, a new assessment model known as evidential reasoning rule with dynamic reliability (ERr-DR) proposed. ERr-DR, evidence evolves from traditional static value value, which can reveal impact external noise on reasonably. As an effective extension ER rule, ERr-DR has excellent modeling ability. Furthermore, by analyzing physical meanings parameters in...
The contradictory nature between transition speed and thermal stability of phase-change materials has always been the key limitation to achievement wide applications under harsh conditions. Ge2.3Sb2.0Te alloy is proposed here feature high (10 year data retention above 220 °C) fast switching (SET programming up 5 ns) for electronic storage. In mushroom-shaped device cells, nanocomposite implement an endurance life nearly 1 × 105 cycles. Such operation among high-temperature alloys best ever...
Layered van der Waals (vdW) dichalcogenides are distinguished by their unique crystal structures and high structural tunability, rendering them suitable for applications in optics optoelectronics. Despite significant processes, some fundamental questions remain two-dimensional (2D) vdW dichalcogenides, such as clarifying detailed structure–property relationship further improving the optoelectronic performance. Herein, applying pressure to tune structure 2D dichalcogenide SiTe2, we realized a...
The cycle operation was performed on 1325 phase change memory (PCM) cells, and 4% of these cells could not be RESET to the high-resistance state after 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles. grown grains have been found in TEM images, heat electron contact (HEC) has laterally diffused. energy-dispersive X-ray spectroscopy profiles HEC expound that Si O elements both multiplied. Thus, resistance increased, resulting...