A5100715592- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Ga2O3 and related materials
- Quantum and electron transport phenomena
- ZnO doping and properties
- Quantum optics and atomic interactions
- Metal and Thin Film Mechanics
- Quantum Information and Cryptography
- Advanced Fiber Laser Technologies
- Photorefractive and Nonlinear Optics
- Solid State Laser Technologies
- Photocathodes and Microchannel Plates
- Nonlinear Waves and Solitons
- Laser-Matter Interactions and Applications
- Adaptive optics and wavefront sensing
- Topological Materials and Phenomena
- Cancer, Hypoxia, and Metabolism
- Gas Sensing Nanomaterials and Sensors
- Quantum Mechanics and Non-Hermitian Physics
- Laser Design and Applications
- Nanoplatforms for cancer theranostics
- Ocular and Laser Science Research
- Surface Roughness and Optical Measurements
Shandong First Medical University
2024
Fourth People’s Hospital of Jinan
2024
The Fourth People's Hospital
2024
Nanchang Hangkong University
2024
Chinese Academy of Sciences
2000-2023
University of Chinese Academy of Sciences
2011-2023
Changchun Institute of Optics, Fine Mechanics and Physics
2011-2023
Institute of Semiconductors
1996-2021
Institute of Physics
2006-2008
Abstract With recent developments of deep ultraviolet (DUV) light-emitting diodes and solar-blind detectors, UV communication (UVC) shows great potential in replacing traditional wireless more scenarios. Based on the atmospheric scattering radiation, UVC has gained considerable attention due to its non-line-of-sight ability, omnidirectional links low background noise. These advantages make an ideal option for covert secure communication, especially military communication. In this review, we...
The intriguing photonic spin Hall effect (PSHE) of reflected Laguerre-Gaussian (LG) beams can be exhibited on the systems with optical anti-parity-time (Anti-PT) symmetry. During reflection, left/right circularly polarized (LCP/RCP) components LG are considered. By controlling parameters Anti-PT systems, PSHE LCP/RCP identical and symmetrical respect to incident-reflected plane (IRP). Due gain/non-Hermitian effects designed special near strong gain points (SGP) exceptional (EPs) obtained...
In this work, we fabricated and characterized 4 × parallel flip-chip AlGaN-based micro-LED arrays with varied mesa diameters of 120 µm, 100 80 60 µm. The reported have a maximum bandwidth 380 MHz peak wavelength ∼275 nm. It is found that the electrical optical characteristics show strong size dependence for ultraviolet communication (UVC). differential resistance increases from 28.8 Ω to 112 Ω, external quantum efficiency (EQE) increased by ∼30%, doubles as diameter individual decreases µm...
The influence of ramp-up time barrier growth temperature on optical properties is investigated for InGaN∕GaN quantum wells deposited sapphire substrate by metal organic chemical vapor deposition. Three times are used from the low and high temperatures well barrier, respectively. results indicate that increasing leads to a blueshift photoluminescence (PL) peak position broadening PL emission linewidth. Similarly, “S-shaped” dependences energy observed in all samples. However, very different...
A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to best of our knowledge. 3.35 W output laser 1063 achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The absorbs pumping light 4.30 and produces very low quantity heat with opto-optic conversion efficiency 77.2%. average slope 81.2% from 0.21 W, threshold, absorbed pump power. Because weakly thermal effect, near-diffraction-limit beam easily obtained quality factor M2 ≈ 1.1.
Tunneling-assisted carrier transfer in coupled double InGaN∕GaN quantum wells (QWs) has been studied by temperature-dependent photoluminescence (PL) at varied excitation density. It is found that the carriers captured wide (“deep”) well are efficiently transferred to adjacent narrow (“shallow”) one resonant tunneling, which results anomalous temperature dependence of PL intensity and significantly enhanced luminescent efficiency for well. This disparate from those conventional...
We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation.
High-quality low-stress GaN and MQWs emitting in the UV region were grown on (100) β-Ga<sub>2</sub>O<sub>3</sub> by MOVPE using a pulsed-flow method.
We report a double z-type folded plane-plane symmetrical cavity diode side pumped solid state yellow-orange laser at 593 nm by using intracavity sum-frequency mixing. By carefully designing the and employing several techniques to increase efficiency, Q-switched source, with an average output power of 8 W, beam quality factor M 2 = 4.86, repetition rate kHz is developed. In this paper, we first use 1338 1064 emissions Nd:YAG crystal generate mixing (SFM).
The presence of manufacture error in large mirrors introduces high-order aberrations, which can severely influence the intensity distribution point spread function. Therefore, high-resolution phase diversity wavefront sensing is usually needed. However, restricted with problem low efficiency and stagnation. This paper proposes a fast method limited memory Broyden-Fletcher-Goldfarb-Shanno (L-BFGS) algorithm, accurately detect aberrations aberrations. An analytical gradient objective function...
<title>Abstract</title> Purpose To screen the hypoxia-related signature in lung cancer, study was designed and carried out. Methods Based on TCGA-LUNG cohort, using R language-based bioinformatics analysis technology, signatures were screened verified by GEO data cohorts. The expression prognostic value of KRT16 further validated immunohistochemical staining non-small cell cancer tissue samples. Results 73 differentially expressed genes obtained from preliminary intersected with PPI...
In this paper, we consider the singular photonic spin Hall effect (PSHE) in a chiral–graphene–chiral (CGC) heterostructure THz band. We investigate impact of chiral medium on reflectance spectra and modulation Fermi energy surface conductivity graphene. Our study shows that placing both sides monolayer graphene results an enhanced transverse shift (TS) compared to non-chiral medium. Moreover, direction TS PSHE can be altered by adjusting sign chirality parameter Finally, establish...
Usually in the calculation of valence subband structure for III-V direct bandgap material, axial approximation had been used Luttinger-Kohn model to simplify computational efforts. In this letter, GaInP/AlGaInP strained and lattice-matched quantum wells was calculated without approximation, on basis 6×6 Hamiltonian including strain spin-orbit splitting effects. The numerical simulation results were presented with help finite-difference methods. with/without compared effect discussed detail....
Compositional distribution of the quantum well and barrier after intermixing for GaInP/AlGaInP system was theoretically analyzed on basis atom diffusion law. With compositional result, valence subband structure intermixed calculated 6×6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. To get more accurate results in calculation, a full 6-band problem solved without axial approximation, which had been widely used model to simplify computational efforts, since there strong...
In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve output performance, should be analyzed. this letter, temperature dependence of electrical derivative characteristics lasers was measured, and potential barrier for obtained. With help secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis presented compared measurement result. The influence...