A5026072844- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Child Abuse and Trauma
- Child Abuse and Related Trauma
- Homicide, Infanticide, and Child Abuse
- Nuclear Issues and Defense
- Integrated Circuits and Semiconductor Failure Analysis
- Child and Adolescent Health
- Restraint-Related Deaths
- Semiconductor materials and interfaces
- Ferroelectric and Negative Capacitance Devices
- Nuclear and radioactivity studies
- Economic Sanctions and International Relations
- Middle East and Rwanda Conflicts
- Molecular Junctions and Nanostructures
- Silicon and Solar Cell Technologies
- Urological Disorders and Treatments
- Traumatic Ocular and Foreign Body Injuries
- Software Reliability and Analysis Research
- Force Microscopy Techniques and Applications
- Migration, Health and Trauma
- Risk and Safety Analysis
- Graphene research and applications
- 2D Materials and Applications
- Safety Systems Engineering in Autonomy
King's College London
2010-2023
SUNY Polytechnic Institute
2018-2021
St James's University Hospital
2001-2020
Trinity College Dublin
2018-2019
Quality Systems (United States)
2015-2017
Advanced Materials and BioEngineering Research
2017
The London College
2016
Creative Commons
2016
Royal Holloway University of London
2015
Texas A&M University
2009
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in research 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces resistance (Rc) few-layer WS2 and MoS2. After doping, Rc MoS2 have been decreased to 0.7 kohm*um 0.5 kohm*um, respectively. The significant reduction attributed achieved high electron density thus Schottky barrier width. As proof-ofconcept, high-performance field-effect transistors...
Eighty nine children under 2 years of age with skull fracture were studied retrospectively--29 definite non-accidental injury serially recorded by the Departments Paediatrics and Forensic Medicine, 60 consecutively admitted to hospital fractures after accidents. There 20 deaths including 19 among abused children. Multiple injuries an inadequate history assisted in diagnosing abuse. Fracture characteristics found considerably more often were: multiple or complex configuration; depressed,...
To determine incidence, aetiology, and clinical features of subdural haematoma effusion (SDH/E) in infancy throughout the British Isles.Cases were notified to Paediatric Surveillance Unit over 12 months by paediatricians, neurosurgeons, paediatric forensic pathologists.A total 186 infants (121 boys, 65 girls) aged 0-2 years identified. Annual incidence SDH/E for UK Republic Ireland is 12.54/100,000 (95% CI 10.3 14.62) 24.1/100,000 0-1 20.89 28.18). A 106 suffered non-accidental head injury...
For the first time, we have demonstrated a 32nm high-k/metal gate (HK-MG) low power CMOS platform technology with standby leakage transistors and functional high-density SRAM cell size of 0.157 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Record NMOS/PMOS drive currents 1000/575 μA/μm, respectively, been achieved at 1 nA/μm off-current 1.1V V <inf xmlns:xlink="http://www.w3.org/1999/xlink">dd</inf> cost process. With this high...
Porous collagen-glycosaminoglycan (collagen-GAG) scaffolds have shown promising clinical results for wound healing; however, these do not replace the dermal and epidermal layer simultaneously rely on local endogenous signaling to direct healing. Functionalising collagen-GAG with factors, and/or additional matrix molecules, could help overcome challenges. An ideal candidate this is platelet-rich plasma (PRP) as it a natural reservoir of growth can be activated form fibrin gel, available...
We report here for the first time that Fermi pinning at polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate occurs due to interfacial Si-Hf and Si-O-Al bonds HfO/sub 2/ Al/sub 2/O/sub 3/, respectively. This fundamental characteristic also affects observed polySi depletion. Device data simulation results will be presented.
The response of a C60 molecule to manipulation across surface displays long range periodicity which corresponds rolling motion. A period three or four lattice constants is observed and accompanied by complex subharmonic structure due molecular hops through regular, repeating sequence adsorption states. Combining experimental data ab initio calculations, we show that this motion in two the Si-C60 covalent bonds act as pivot over rotates while moving one constant identify bonding...
In this letter, we propose a nonplanar transition metal dichalcogenide (TMD) channel field effect transistor and explore its ballistic performance in the ultimate scaling limit of sub-5 nm physical gate length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ) using self-consistent nonequilibrium Greens function framework. It is observed that electrostatic integrity remains intact even at such ultrashort L eventually limited by direct...
One hundred and ninety five children aged up to 6 years with burns scalds (30 non-accidental 165 accidental) were studied retrospectively. The history, presentation, other typical injuries assisted the diagnosis of abuse. Scalds accounted for 81% accidents 25% cases abuse, 17% 44%, respectively. usually followed spillage from kitchen containers in forced tap water immersion Burns both abuse resulted contact a wide range household appliances, including room heaters. Attention is drawn back...
Fifty children who were referred to the child abuse team in Leeds over 10 years 1976-86 with suspected non-accidental injury found have conditions which mimicked injury. These included impetigo (nine children) and blue spots (five children). Five presented multiple bruising had haemostatic disorders. Eight disorders of bone. been previously abused physically. Four showed evidence neglect. One as well condition mimicking abuse. It is emphasised that when a sensitive thorough assessment should...
This paper presents for the first time a full 32 nm CMOS technology high data rate and low operating power applications using conventional high-k with single metal gate stack. High speed digital transistors are demonstrated 22% delay reduction ring oscillator (RO) at same versus previous SiON technology. Significant matching factor (A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VT</sub> ) improvement ~2.8 mV.um) 1/f noise aligned poly...
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that exhibit subthreshold slope (SS) below 60 mV/dec and wide range on-current depending the direction due to highly anisotropic structures phosphorene. By benchmarking monolayer MoTe2...
The controversial issue of the origin $p(2\ifmmode\times\else\texttimes\fi{}1)$ reconstruction Si(001) surface observed in recent low temperature scanning tunneling microscopy experiments is clarified here using 5 K noncontact atomic force microscopy. $c(4\ifmmode\times\else\texttimes\fi{}2)$ phase at separations corresponding to weak tip-surface interactions, confirming that it ground state surface. At larger frequency shifts symmetric dimers observed. By studying interaction a reactive Si...
A total of 130 children were identified in whom both evidence sexual abuse and non-accidental, non-genital physical injuries (bruises, fractures, scratches, burns scalds, including failure to thrive) found. There 77 girls 53 boys with mean ages 5.7 6.8 years respectively the peak age between second seventh birthdays; this reflects previous reports indicating that predominantly involves young children. Patterns injury suggested sexually motivated assault included bruises, around lower trunk...
We report on terahertz detection (from 0.2 THz to 2.4 THz) by Si FinFETs of different widths (with 2, 20, and 200 fins connected in parallel). a small number with feature sizes as short 20 nm 40 nm) showed very high responsivity (far above that previously measured for standard CMOS). explain this improvement negligible narrow channel effects.