In this work, we present a graphene-based photodetector specifically engineered to op-erate at wavelength of 1310 nm. The device leverages the SPARK effect, previously investigated only 1550 It features hybrid waveguide structure comprising hy-drogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumi-nation, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. photo-detector...

The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with switches playing a pivotal role high-speed, low-latency data transmission. In this work, we introduce novel design an adiabatic switch based on the thermo-optic effect using silicon-on-insulator (SOI) technology. approach relies slow signal evolution, minimizing power dissipation addressing challenges of traditional switches. Machine learning...

In this work, we present a graphene-based photodetector operating at wavelength of 1310 nm. The device leverages the SPARK effect, which has previously been investigated only 1550 It features hybrid waveguide structure comprising hydrogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumination, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. demonstrates peak...

In this work, we investigate a vertically illuminated near-infrared photodetector based on graphene layer physically embedded between crystalline and hydrogenated silicon layer. Under illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to lowering of graphene/crystalline Schottky barrier as result upward shift Fermi level induced by charge carriers released from traps localized at graphene/amorphous interface under illumination. A...

Photodetectors are of great interest in several technological applications thanks to their capability convert an optical signal into electrical one through light–matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful multiple due compelling performances. Here, we present a 2D photodiode heterojunction graphene single layer deposited p-type and n-type Silicon substrates. We report the electro-optical properties device that have...

Zinc oxide nanowires (ZnONWs) are largely used in biosensing applications due to their large specific surface area, photoluminescence emission and electron mobility. In this work, the surfaces of ZnONWs modified by covalent bioconjugation a peptidic nucleic acid (PNA) probe whose sequence is properly chosen recognize complementary DNA (cDNA) strand corresponding tract CD5 mRNA, main prognostic marker chronic lymphatic leukemia. The interaction between PNA cDNA preliminarily investigated...

Abstract In the last two decades there has been growing interest in silicon photonics and possibility to integrate new materials overcome intrinsic limitations. Erbium represented a viable solution for realization of light sources at telecommunications wavelengths opening path investigation various photonic devices based on rare earth. this work we investigate photodetector operating 1550 nm whose detection mechanism is internal photoemission effect through an Er/Si Schottky junction. The...

Optical power switches are essential components in fiber optic communication systems, requiring minimal losses, a broad operating wavelength range, and high tolerance to fabrication errors for optimal performance. Adiabatic optical inherently meet these criteria well suited manufacturing processes which support large-scale production at low costs. This paper presents the design simulation of an adiabatic switch with flat response whole 1525–1625 nm range (C band L band) both TE TM...

In this work we theoretically investigate the responsivity/noise equivalent power (NEP) trade-off in graphene/semiconductor Schottky photodetectors (PDs) operating near-infrared regime and working at room temperature. Our analysis shows that responsivity/NEP ratio is strongly dependent on barrier height (SBH) of junction, derive a closed analytical formula for maximizing it. addition, discuss how SBH related to reverse voltage applied junction order show these devices could be optimized...

Photodetectors are of great interest in several technological applications thanks to their capability convert an optical signal into electrical one through light-matter interactions. In particular, broadband photodetectors used multiple such as environmental monitoring, imaging, fire detection, and astronomical observations. We present a two-dimensional photodiode heterojunction based on reduced graphene oxide (rGO) deposited n-type Silicon substrate. report the electro-optical properties...

Quantum cascade lasers are, by far, the most compact, powerful, and spectrally pure sources of radiation at terahertz frequencies, and, as such, they are crucial importance for applications in metrology, spectroscopy, imaging, astronomy, among many others. However, those applications, particularly tomography, near-field microscopy, undesired artifacts, resulting from use a coherent source, can be detrimental. Random offer concrete technological solution to above issue. They, indeed, maintain...

In this work we have investigated resonant cavity enhanced (RCE) photodetectors (PDs), exploiting the Internal Photoemission Effect (IPE) through a Single Layer Graphene (SLG) replacing metals in Silicon (Si) Schottky junctions, operating at 1550 nm. The SLG/Si junction is incorporated into Fabry-Pèrot (F-P) optical microcavity order to enhance both graphene absorption and responsivity. These devices are provided of high spectral selectivity resonance wavelength which can be suitably tuned...

In this work, we theoretically investigate a graphene/silicon Schottky photodetector operating at 1550 nm whose performance is enhanced by interference phenomena occurring inside an innovative Fabry–Pèrot optical microcavity. The structure consists of hydrogenated amorphous silicon/graphene/crystalline silicon three-layer realized on the top double silicon-on-insulator substrate working as high-reflectivity input mirror. detection mechanism based internal photoemission effect, and...

This paper presents a comprehensive simulation study on the design and of an electro-optic ring switch utilizing graphene material. The employs electrically Tunable Refractive Index by to modulate transmission characteristics within resonator structure. By applying electrical voltage ranging from -6 -10V, significant changes are noticed in output ports' characteristics. In particular, through ports varies between 81% 18% for port n.1 21% 83%for no.2, proving that signal propagation can be...

In this work, we propose the design of a compact optical switch featuring wide bandwidth 360 nm, suitable for telecom operations. The is passive 3dB splitter realized through Y-branch, electrically activated via graphene/insulator/graphene (GIG) capacitor embedded within rib waveguide (WG). itself an SOI-based hybrid WG composed crystalline (c-Si) and hydrogenated amorphous silicon (a-Si:H), with GIG between two layers. Such photonic structure optimizes light-matter interaction enables...

This work aim to determine a Single Mode (SM) Silicon-On-Insulator (SOI) rib waveguide using Machine learning (ML) techniques, which learn automatically by matching the input data with target property. Random Forest (RF) is ML algorithm used in this work. The accuracy of model reaches 99% R 2 score. device based on Silicon (Si), cladding made Silica (SiO ). results obtained illustrate conditions for SM, width and etch-depth found be relatively smaller compared total thickness. approach have...

Silicon Carbide (SiC), with its superior electronic properties, is recognized as one of the most promising candidates for new generation optoelectronic devices. In present work, a preliminary study about graphene/4H-SiC Schottky junction photodiode operating in near-infrared (NIR) spectral range was performed. particular, we report fabrication and electro-optical characterization first - to best our knowledge graphene/4H-SiC-based photodetector. Ten devices, same geometry, were electrically...

In this work, we present the first experimental results on a Schottky photodetector based Silicon Carbide (SiC) and Graphene (Gr) designed to operate in visible spectral range. While SiC has been extensively investigated for various applications ultraviolet domain, there are only few works range, where exhibits negligible optical absorption. To overcome such intrinsic limit of SiC, exploit properties single layer Gr enhance, significantly, photodetection performance device operating, our...

In last years, the introduction of 2-dimensional materials such as graphene has revolutionized world silicon photonics. this work, we demonstrate a new approach for integrating into silicon-based photodetectors. We leverage thin film hydrogenated amorphous to embed within two different photonic structures, an optical Fabry-Pérot microcavity, and waveguide, achieving stronger light-matter interaction. The investigated devices have shown promising performance resulting in responsivities high...

In last years, the introduction of new materials such as graphene has led to advances in performances silicon-based photonic devices. Here, we present an innovative type photodetector based on embedded between hydrogenated amorphous and crystalline silicon. More detail, with aim increase optical absorption near-infrared spectrum, a low-finesse Fabry-Pérot microcavity been investigated demonstrating responsivities 26 mA/W around 1550nm. Furthermore, integrated into hybrid waveguide able...

We observe the first evidence of self-mixing in THz frequency quantum cascade random lasers fabricated both wire and irregularly squared resonator architectures with surface photonic patterns. By reflecting emitted light back into laser cavity changing external length, we interference fringes within cavity, thereby proving self-mixing. This paves way to detectorless speckle-free imaging applications far-infrared.