We report vertically illuminated, resonant cavity enhanced, graphene–Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission the interface. To obtain spectral selectivity and enhance responsivity, PDs are integrated with an optical cavity, resulting in multiple reflections resonance, enhanced absorption graphene. get a wavelength-dependent photoresponse external (internal) responsivity ∼20 mA/W (0.25A/W). The may be further tuned by varying wavelength. Our...

Abstract Silicon‐based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety passive active silicon photonic devices have been developed to operate at telecom datacom wavelengths, which has minimal optical absorption ‐ due its bandgap 1.12 eV. Although in principle transparency window limits use detection wavelengths above 1.1 μm, recent years tremendous advances made field all‐silicon sub‐bandgap photodetectors...

In this letter, a near infrared all-silicon (all-Si) photodetector integrated into silicon-on-insulator waveguide is demonstrated. The device based on the internal photoemission effect through metal/Si Schottky junction placed transversally to optical field confined waveguide. technological steps utilized fabricate allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show responsivity of 0.08 mA/W at 1550 nm...

Design, fabrication, and characterization of an asymmetric metal-semiconductor-metal photodetector, based on internal photoemission effect integrated into a silicon-on-insulator waveguide, are reported.For this responsivity 4.5 mA/W has been measured at 1550 nm, making it suitable for power monitoring applications.Because the absorbing metal is deposited strictly around vertical output facet very small contact area about 3 µm 2 obtained transit-time-limited bandwidth 1 GHz...

The theory of an internal photoemission effect (IPE) in Schottky junctions has been reviewed, and the existing Vickers model commented enriched. Indeed, since modified Fowler equation is very often used to describe IPE even when approximations on which it based are not met, we have derived precise conditions that allow use and, possibly, as may change case where these were verified. Our shows how performance surface-illuminated devices can be optimized, propose analytical formulation able...

In this work, we propose the use of complex, bioderived nanostructures as efficient surface-enhanced Raman scattering (SERS) substrates for chemical analysis cellular membranes. These structures were directly obtained from a suitable gold metalization Pseudonitzchia multistriata diatom silica shell (the so called frustule), whose grating-like geometry provides large light coupling with external radiation, whereas its extruded, subwavelength lateral edge an excellent interaction cells without...

In this paper, the realization and characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible working at 1.55μm, are reported. The detector is RCE structure incorporating Schottky diode its principle based on internal photoemission effect. Taking advantage Cu∕Si fed high reflectivity Bragg mirror, an improvement in responsivity 1.55μm experimentally demonstrated.

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We have fabricated a microarray of porous silicon Bragg reflectors on crystalline substrate using technological process based standard photolithography and electrochemical anodization the silicon. The array density is 170 elements/cm2 each element has diameter 200 μm. structures been used as platform to immobilize an amino terminated DNA single strand probe. All fabrication steps monitored by spectroscopic reflectometry, optical electron microscopy, Fourier transform infrared spectroscopy. A...

In this paper, design, fabrication and characterization of an all-silicon photodetector (PD) at 1550 nm, have been reported. Our device is a surface-illuminated PD constituted by Fabry-Perot microcavity incorporating Cu/p-Si Schottky diode. Its absorption mechanism, based on the internal photoemission effect (IPE), has enhanced critical coupling condition. experimental findings prove peak responsivity 0.063 mA/W, which highest value obtained in IPE-based Si around nm. Finally, capacitance...

This paper presents the design, fabrication and characterization of Schottky graphene/silicon photodetectors, operating at both 2 micron room temperature. The junction has been carefully: characterized device shows a non ideal behaviour with increasing temperature interfacial trap density measured as 1.1x10^14 eV^-1cm^-2. Photodetectors are by an internal (external) responsivity 10.3 mA/W (0.16 mA/W) in excellent agreement theory. Our devices pave way for developing hybrid graphene-Si...

In this paper, the design of a novel photodetector at 1.55 µm, working room temperature and completely silicon compatible, is reported. The device resonant cavity enhanced (RCE) structure incorporating based on internal photoemission effect. order to quantify performance photodetector, quantum efficiency including image force effect, bandwidth dark current as function bias voltage numerically calculated. A comparison among three different Schottky barrier photodetectors, having metal layers...

We report on a method for surface plasmon resonance (SPR) refractive index sensing based direct time-domain measurements. An optical resonator is built around an SPR sensor, and its photon lifetime measured as function of loss induced by variations. The does not rely any spectroscopic analysis or intensity measurement. Time-domain measurements are practically immune to light fluctuations thus lead high resolution. A proof concept experiment carried out in which sensor response liquid samples...

In this work, a new concept of resonant cavity-enhanced graphene/silicon Schottky photodetector operating at 1550 nm is theoretically investigated. Device essentially Fabry-Perot interferometer where two high-reflectivity distributed Bragg reflectors surround an optical cavity composed hydrogenated amorphous silicon, graphene, and crystalline silicon. The enhancement the field inside allows greatly increasing single-layer graphene absorption whose behavior described by derivation closed...

In this work, we present a graphene-based photodetector specifically engineered to op-erate at wavelength of 1310 nm. The device leverages the SPARK effect, previously investigated only 1550 It features hybrid waveguide structure comprising hy-drogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumi-nation, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. photo-detector...

The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with switches playing a pivotal role high-speed, low-latency data transmission. In this work, we introduce novel design an adiabatic switch based on the thermo-optic effect using silicon-on-insulator (SOI) technology. approach relies slow signal evolution, minimizing power dissipation addressing challenges of traditional switches. Machine learning...

In this work, we present a graphene-based photodetector operating at wavelength of 1310 nm. The device leverages the SPARK effect, which has previously been investigated only 1550 It features hybrid waveguide structure comprising hydrogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumination, defect states release charge carriers into graphene layer, modulating thermionic current across graphene/crystalline silicon Schottky junction. demonstrates peak...

In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. particular, design, realization and characterization of back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 μm, are reported. The photodetectors constituted by Fabry-Perot microcavity incorporating diode. principle based on internal photoemission effect effect. Performances terms responsivity, free spectral range, finesse estimated bandwidth

We report on the fabrication and characterization of a metal-semiconductor-metal photodetector operating at 1550 nm integrated into silicon-on-insulator waveguide. Detection uses internal photoemissions through metal/Si interface. In particular, small contact layer directly deposited vertical output facet waveguide absorbs incoming radiation confined rib The device parameters for responsivity, dark current, bandwidth take values 3.5 mA, nA, 1 GHz, respectively. results obtained indicate...

In this work, we investigate a vertically illuminated near-infrared photodetector based on graphene layer physically embedded between crystalline and hydrogenated silicon layer. Under illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to lowering of graphene/crystalline Schottky barrier as result upward shift Fermi level induced by charge carriers released from traps localized at graphene/amorphous interface under illumination. A...

Graphene oxide (GO) is a photoluminescent material whose application in optoelectronics has been strongly limited due to its poor emission intensity. In this work, GO–porous silicon (GO–PSi) hybrid structure realized order investigate the properties of GO infiltrated into porous matrix. GO–PSi characterized by Fourier transform infrared spectroscopy, spectroscopic reflectometry, and steady-state photoluminescence. A photoluminescence enhancement factor 2.5 with respect deposited on flat...

Graphene oxide (GO) is a photoluminescent material whose application in integrated optoelectronics has been strongly limited due to poor emission intensity and handling procedures not compatible with standard microelectronic ones. In this work, hybrid GO-porous silicon (GO-PSi) structure realized order investigate the properties of GO infiltrated into an aperiodic porous multilayered matrix. A photoluminescence enhancement by factor 32, compared same amount deposited on flat surface,...