A5020849033- Physics of Superconductivity and Magnetism
- Microstructure and mechanical properties
- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Nonlinear Dynamics and Pattern Formation
- Metallurgy and Material Forming
- Cold Atom Physics and Bose-Einstein Condensates
- Microstructure and Mechanical Properties of Steels
- Magnetic and transport properties of perovskites and related materials
- Thermal properties of materials
- Natural Antidiabetic Agents Studies
- Mechanical and Optical Resonators
- Spectroscopy and Quantum Chemical Studies
- Quantum optics and atomic interactions
- Thallium and Germanium Studies
- Laser-Matter Interactions and Applications
- Advanced Chemical Physics Studies
- Advanced Fiber Laser Technologies
- Molecular Junctions and Nanostructures
- Nonlinear Photonic Systems
- Copper Interconnects and Reliability
- Thermal Radiation and Cooling Technologies
- Advanced Materials Characterization Techniques
- Aluminum Alloy Microstructure Properties
- Magnetic Properties and Synthesis of Ferrites
Sichuan University
2025
West China Hospital of Sichuan University
2025
Jilin University
2025
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry
2025
RWTH Aachen University
2021-2024
Northwest A&F University
2023-2024
Chinese Academy of Sciences
2024
Institute of Semiconductors
2024
China Special Equipment Inspection and Research Institute
2023
Chengdu University of Information Technology
2020-2021
Abstract Monocrystalline SnSe is one of the most promising thermoelectric materials with outstanding performance and a high abundance constituting elements. However, polycrystalline SnSe, which more robust for applications, only shows large figure‐of‐merit ( zT ) values in its high‐symmetry phase. Stabilizing phase at low temperatures can thus enhance average value over broad temperature range. In this work, rock‐salt successfully obtained by alloying AgVVI 2 compounds (V = Sb, Bi; VI Se,...
Abstract Composite engineering favors high thermoelectric performance by tuning the carrier and phonon transport. Herein, orthorhombic rhombohedral dual‐phase GeSe are designed in situ tailoring chemical bonds. Atom probe tomography verifies coexistence of a covalently bonded phase metavalently GeSe‐InTe alloys. The production simultaneously increases concentration, mobility, band degeneracy, density‐of‐states effective mass due to reduced formation energy cation vacancies improved crystal...
Engineering the electronic band structures upon doping is crucial to improve thermoelectric performance of materials. Understanding how dopants influence states near Fermi level thus a prerequisite precisely tune structures. Here, we demonstrate that Sn-s in SnTe contribute density at top valence band. This consequence half-filled p-p σ-bond (metavalent bonding) and its resulting symmetry orbital phases maximum (L point Brillouin zone). insight provides recipe for identifying superior...
The dynamical mean-field concept of approximating an unsolvable many-body problem in terms the solution auxiliary quantum impurity problem, introduced to study bulk materials with a continuous energy spectrum, is here extended molecules, i.e., finite systems discrete spectrum. application small clusters hydrogen atoms yields ground state energies which are competitive leading chemical approaches at intermediate and large interatomic distances as well good approximations excitation
Cluster dynamical mean-field and maximum entropy analytical continuation methods are used to obtain theoretical estimates for the many-body density of states, electron self-energy, in-plane $c$-axis optical conductivity ${B}_{1g}$ ${B}_{2g}$ Raman-scattering spectra two-dimensional square lattice Hubbard model at intermediate interaction strengths carrier concentrations near half filling. The calculations based on an eight-site cluster approximation which gives access both zone-diagonal...
The optical conductivity of the one-band Hubbard model is calculated using ``dynamical cluster approximation'' implementation dynamical mean-field theory for parameters appropriate to high-temperature copper-oxide superconductors. calculation includes vertex corrections and result demonstrates their importance. At densities one electron per site, an insulating state found with gap value above-gap absorption consistent measurements. As carriers are added rapidly weakens a three component...
We demonstrate experimentally an efficient coherent rephasing scheme for the storage and recall of weak light pulses in inhomogeneously broadened optical transition a Pr(3+):YSO crystal at 2.1 K. Precise pumping using frequency stable (≈1 kHz linewidth) laser is employed to create highly controllable atomic comb structure. report single photon level retrieval efficiencies 25%, based on photon-echo-type reemission forward direction. The high efficiency mainly product our precise...
A method is presented for the unbiased numerical computation of two-particle response functions correlated electron materials via a solution dynamical mean-field equations in presence perturbing field. The power demonstrated Raman ${B}_{1g}$ and ${B}_{2g}$ scattering intensities two-dimensional Hubbard model parameter regimes believed to be relevant high-temperature superconductivity. theory reproduces ``two-magnon'' peak characteristic intensity insulating parent compounds high-${T}_{c}$...
The room-temperature thermoelectric performance of materials underpins their cooling ability. Carrier mobility plays a significant role in the electronic transport property materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using vertical Bridgman method. A large weighted ∼410 cm2 V–1 s–1 is achieved AgPb18.4SbTe20 crystal, almost 4 times higher than that polycrystalline...
Doping is an important and routine method to tune the properties of semiconductors. Dopants accumulated at grain boundaries (GBs) can exert a profound influence on microstructures transport heat charge. To unravel effect dopant accumulation GBs scattering electrons, individual high‐angle in three PbSe samples doped with different amounts Cu using home‐designed correlative characterization platform combining electron backscatter diffraction, microcircuit property measurements, atom probe...
In the realm of materials science and chemical industry, germanium emerges as a strategic resource with distinctive properties that extend its applicability beyond traditional electronics optics into promising field catalysis. Despite significant role in advanced technological applications, potential elemental catalyst remains unexplored. Leveraging recent developments mechanochemistry, this study introduces groundbreaking approach to activate via mechanical force, facilitating Reformatsky...
In the realm of materials science and chemical industry, germanium emerges as a strategic resource with distinctive properties that extend its applicability beyond traditional electronics optics into promising field catalysis. Despite significant role in advanced technological applications, potential elemental catalyst remains unexplored. Leveraging recent developments mechanochemistry, this study introduces groundbreaking approach to activate via mechanical force, facilitating Reformatsky...
New rolling technique, i.e. asymmetric combined with cross is adopted to produce Ta sputtering targets in this study. Electron backscatter diffraction (EBSD) analysis suggests that {111} and {100} deformed grains distribute alternately along normal direction (CR) (ACR) samples. Misorientation angle distribution indicates severe orientation-dependent grain fragmentation exists the CR sample, which also confirmed by kernel average misorientation reference orientation deviation-hyper. Grain...
One hundred and thirty-five degree clock rolling significantly improves the texture homogeneity of tantalum sheets along thickness, but a distinctly fragmented substructure is formed within {111} (<111>//normal direction (ND)) {100} (<100>//ND) deformation grains, which not suitable to obtain uniform recrystallization microstructure. Thus, effects different annealing temperatures on microstructure heterogeneity thickness were investigated by X-ray diffraction (XRD), electron...