A5111100680- Magnetic properties of thin films
- ZnO doping and properties
- Magnetic Properties and Applications
- Magnetic and transport properties of perovskites and related materials
- Silicon Carbide Semiconductor Technologies
- Gas Sensing Nanomaterials and Sensors
- Magnetic Properties of Alloys
- Silicon and Solar Cell Technologies
- Multiferroics and related materials
- Semiconductor materials and devices
- Copper-based nanomaterials and applications
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Metallic Glasses and Amorphous Alloys
- Advanced Memory and Neural Computing
- Multilevel Inverters and Converters
- Polyamine Metabolism and Applications
- Advanced Chemical Physics Studies
- Fermentation and Sensory Analysis
- Ga2O3 and related materials
- Integrated Circuits and Semiconductor Failure Analysis
South China University of Technology
2008-2025
Yangzhou Polytechnic Institute
2025
Changzhi University
2024
Boston University
2014
Tsinghua University
2004-2007
Ferromagnetic insulators that exhibit strong ferromagnetism at the atomic level are believed to be suitable for magnetic dielectric barriers in spintronic devices and solid-state qubits quantum computing. Here a giant moment of $6.1{\ensuremath{\mu}}_{B}∕\mathrm{Co}$ high Curie temperature ${T}_{C}$ $790\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ observed $(4\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%)$ Co-doped $\mathrm{ZnO}$ films, which is not carrier mediated, but...
Ag-doped ZnO films were prepared by direct current reactive magnetron sputtering using a zinc target with various Ag-chips attached. The influence of Ag doping on the microstructure, photoluminescence and Raman scattering systematically investigated. results indicate that doped can still retain wurtzite structure, although c-axis as preferred orientation is decreased doping. near band edge emission film be enhanced concentration 1.6–2.8 at.% quench further increase in concentration. A local...
The local Fe structure and corresponding ferromagnetism are different for various concentrations of Fe-doped ZnO (Zn1?xFexO, x = 0?0.07) films, which prepared on LiNbO3(104) substrates by reactive magnetron sputtering. X-ray photoelectron spectroscopy x-ray absorption near-edge (XANES) reveal that, when x?0.04, is in the 2+ state incorporated into wurtzite lattice ZnO, as increases further, a second phase Fe3O4 induced. Furthermore, full multiple-scattering substitution ab?initio calculation...
We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO2) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through application using ionic gel to drive the insulator-to-metal transition in underlying VO2 layer. Positive and negative can selectively tune resonance into “off” or “on” state by pushing a more conductive insulating regime respectively. Compared graphene based control devices,...
This study aims to design a novel combined spherical tensegrity structure and evaluate its cushioning performance offer new option for planetary exploration landing mechanism. Initially, based on the circumferential assembling method, “class II” was constructed using square frustum unit as basic element. Then, equilibrium equations were formulated in accordance with principle of virtual work confirm self-equilibrium configuration, stability designed assessed by determining type according...
Objective:To investigate the correlation between serum NLRP1 inflammasome level and depressive state in acute stage of stroke.Method:A total 102 patients with stroke who were hospitalized for first time Department Neurology First Affiliated Hospital Dali University from April 2023 to October included, 80 them met inclusion criteria. On 7th day admission, evaluated using 24-item Hamilton Depression Scale (HAMD-24), divided into 31 depression group 49 non-depression group. The general clinical...
A ferromagnetic oxide ${\mathrm{Co}}_{0.05}(\mathrm{LiNb}{)}_{0.95}{\mathrm{O}}_{3\ensuremath{-}\ensuremath{\delta}}$ was prepared by Co ion implantation into (104) ${\mathrm{LiNbO}}_{3}$ wafers. is uniformly distributed to a depth of $\ensuremath{\sim}220\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ implanting at three different energies and doses. Electron energy loss spectroscopy x-ray absorption near-edge structure (XANES) spectra reveal solid solution cobalt in an implanted layer, where not...
Magnetization and local Co structure of $4\phantom{\rule{0.3em}{0ex}}\mathrm{at.}\phantom{\rule{0.2em}{0ex}}%$ Co-doped ZnO insulating films, prepared by direct current reactive magnetron cosputtering, have been studied as a function substrates. Although all the Co:ZnO films possess common feature that ${\mathrm{Co}}^{2+}$ replaces ${\mathrm{Zn}}^{2+}$, room-temperature ferromagnetism is strongly dependent on The reorganization defects due to magnetoelectric coupling slight dissimilarity...
Epitaxial growth of Co-doped ZnO films has been prepared on Al2O3 (001) substrate by an efficient and low cost method, i.e., direct current reactive magnetron cosputtering. The correlation among local Co structure magnetic, electric, optical properties Co:ZnO carefully studied. Taking advantage decreasing the oxygen partial pressure, we have demonstrated transition from diluted magnetic insulators (DMIs) to semiconductors (DMSs) in Zn0.96Co0.04O films. Full multiple-scattering ab initio...
In this paper, the degradation behavior of electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) carried out for commercial 1.2-kV/30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that on-state resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dson</sub> ) threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>...
Capacitance spectroscopy under illumination and at a forward bias close to the open-circuit voltage ( V oc ) has recently been proposed characterize interface states in a-Si : H/c-Si heterojunctions, defect density, D it , is estimated from simulations of capacitance. In this paper, theoretical diffusion capacitance, C presented for measurement directly states. By solving excess minority carrier density c-Si when are introduced, expression developed as function out depletion regions, Δ n...
To provide a guideline for converter design and fault protection, the failure mechanism reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, during short-circuit (SC) commercial 1.2-KV/19-A SiC was After SC tests, I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> device decreased significantly. Moreover, it found that V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub>...
Structure, magnetization, and magnetoresistance of $(\mathrm{Co}\phantom{\rule{0.3em}{0ex}}{t}_{\mathrm{Co}}\phantom{\rule{0.3em}{0ex}}\mathrm{nm}∕\mathrm{Ru}\phantom{\rule{0.3em}{0ex}}9.6\phantom{\rule{0.3em}{0ex}}\mathrm{nm})$ multilayers, prepared by vapor deposition, have been studied as a function Co layer thickness $({t}_{\mathrm{Co}})$, from 1.1 to 6.6 nm. The experimental results indicate that an expansion average atomic volume would enhance the magnetic moment...
Acetaldehyde is an important carbonyl compound commonly detected in wines. A high concentration of acetaldehyde can affect the flavor wines and result adverse effects on human health. Alcohol dehydrogenase I (ADH1) Saccharomyces cerevisiae catalyzes reduction reaction into ethanol presence cofactors, showing potential to reduce content In this study, ADH1 was successfully expressed Pichia pastoris GS115 based codon optimization. Then, expression level enhanced by replacing its promoter with...
Fe/Er multilayers were prepared by high-vacuum electron-beam evaporation system and their microstructures have been investigated. Henkel analysis was performed via isothermal remanent magnetization curve direct current demagnetization curve. Magnetic measurement indicates that an easy axis in film plane a small value of positive magnetoresistance. It is showed the Er layer will change to amorphous structure when its thickness below 3.5 nm. Hence, Δm plots established according data. The...