A5069168330- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Quantum Chromodynamics and Particle Interactions
- GaN-based semiconductor devices and materials
- Radiation Detection and Scintillator Technologies
- Semiconductor Quantum Structures and Devices
- Particle Detector Development and Performance
- Ga2O3 and related materials
- Luminescence Properties of Advanced Materials
- Computational Physics and Python Applications
- Dark Matter and Cosmic Phenomena
- Atomic and Subatomic Physics Research
- ZnO doping and properties
- Cosmology and Gravitation Theories
- Neutrino Physics Research
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- Metal and Thin Film Mechanics
- Chalcogenide Semiconductor Thin Films
- Glass properties and applications
- Medical Imaging Techniques and Applications
- Nuclear Physics and Applications
- Nanowire Synthesis and Applications
- Light effects on plants
Vilnius University
2016-2025
Institute of High Energy Physics
2020-2024
A. Alikhanyan National Laboratory
2022-2024
University of Antwerp
2024
Instituto de Física de Cantabria
2023
Universidad de Cantabria
2023
Institute of Nanotechnology
2020
Czech Academy of Sciences, Institute of Physics
2017
Applied Research (United States)
2011
Rensselaer Polytechnic Institute
2002-2010
Based on perspectives of the development semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility greenhouse plant cultivation was designed with dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) AlGaAs (photosynthetic 660 photomorphogenetic 735 LEDs. Photosynthesis intensity, photosynthetic productivity growth morphology as well chlorophyll...
We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaN heterostructures grown sapphire 6H–SiC substrates. Our results demonstrate that incorporation In reduces the lattice mismatch, Δa, between AlInGaN GaN, an to Al ratio close 1:5 in nearly strain-free heterostructures. The observed reduction band gap, ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher estimated linear dependencies Δa ΔEg molar fraction. resulting changes built-in...
Abstract Effects of illumination spectrum on the morphogenesis chrysanthemum plantlets (Chrysanthemum morifolium Ramat. ‘Ellen’) grown in vitro were studied using an system consisting four groups light-emitting diodes (LEDs) following spectral regions: blue (450nm), red (640nm), (660nm), and far-red (735nm). Taking into account all differences shoot height, root length, fresh dry weight (FW DW, respectively), observed while changing total photon flux density (PFD), optimal PFD for growth was...
A single crystal scintillation material (Gd<sub>0.5</sub>–Y<sub>0.5</sub>)<sub>3</sub>Al<sub>2</sub>Ga<sub>3</sub>O<sub>12</sub> (GYAGG) doped with Ce and codoped Mg at a small concentration was grown by the Czochralski technique studied for its properties first time.
The spectra of luminescence and photoexcitation as well emission decay kinetics in various parts are investigated ZnWO4 CdWO4 crystals a wide temperature range (4.2 to 300 K). bands red afterglow rapidly decaying violet observed for the first time. likeness properties allows explanation these tungstenite type terms configurational coordinate diagrams self-activated radiation centre self-trapped exciton. [Russian Text Ignored].
High quality multiple quantum well Al0.35Ga0.65N active layers with narrow wells designed for ultraviolet (UV) light-emitting diodes using the phonon engineering approach are characterized quasi-steady-state and time-resolved photoluminescence spectroscopy. The intensity decrease temperature increasing from 10to300K was very small, upper limit of internal efficiency (IQE) up to 70% estimated based on this dependence. Carrier lifetime measurements yielded lower bound IQE be ∼35% under optical...
Time‐resolved spectroscopic study of the photoluminescence response to femtosecond pulse excitation and free carrier absorption at different wavelengths, thermally stimulated luminescence measurements investigation differential are applied amend available data on transfer in GAGG:Ce scintillators, an electronic energy‐level diagram this single crystal is suggested explain influence codoping with divalent Mg kinetics light yield. The conclusions generalized by comparison aliovalent doping...
A Czochralski-grown single crystal of GAGG:Ce,Mg allows for a high Ce dopant and Mg codopant concentration in the crystal, resulting acceleration scintillation decay down to several nanoseconds at expense light yield.
We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type films as thick 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, determined by Hall measurements, was high 8×1017 cm−3 and mobility 40 cm2/Vs. used doping technique demonstrate solar-blind transparent Schottky barrier photodetectors cut-off wavelength of 278 nm.
The temperature dependences of the peak position and width photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation exciton localization hopping. introduction a doubled-scaled potential profile due to inhomogeneous distribution indium allowed obtaining good quantitative fit experimental data. Hopping excitons was assumed occur through localized states distributed on 16 meV energy scale within In-rich clusters with average these dispersed larger (42 meV) scale.
An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN substrates. Structural analysis by using x-ray diffraction confirms high crystalline quality of these structures. Photoluminescence dependences excitation intensity and temperature under band-to-band barrier layers selective the presented. Al0.5Ga0.5N/AlN MQW grown demonstrate emission at 260 nm with intensity. Stimulated 258 was...
The dynamics of photoexcited excitons in thin $\mathrm{In}\mathrm{Ga}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ multiple quantum wells (QW's) with different In contents was studied by comparing the experimental data obtained photoluminescence (PL), PL excitation, and photoreflectance spectroscopy techniques results Monte Carlo simulations exciton hopping. temperature dependence linewidth demonstrated to be a fair agreement model phonon-assisted in-plane hopping within In-rich regions inhomogeneous...
We report on AlGaN single-quantum-well light-emitting diodes (LEDs) sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling device quantum efficiency. At room temperature, for a 200 μm×200 μm square geometry mesa type device, we obtain power as high 0.25 mW 650 mA pulsed pumping. The LEDs show significantly higher output powers temperatures below 100 K.
The emission efficiency droop and internal quantum (IQE) in AlGaN epilayers heterostructures were investigated by studying photoluminescence intensity dependence on excitation power density at different temperatures the range from 8 to 300 K three samples with similar Al content (33%-35%) strength of carrier localization: an epilayer multiple wells well widths 5.0 2.5 nm. It is shown that phenomena leading strongly influence temperature and, therefore, affect estimation IQE based this...
Photoluminescence studies of carrier dynamics in AlGaN epilayers with different degrees localization and densities nonradiative recombination centers show that the prevailing droop mechanism strong comparatively high density is enhanced due to delocalization at elevated density. The photoluminescence was investigated under quasi-steady-state excitation temperature range from 8 300 K. results proved onset this effect below threshold for high-density effects epilayers, such as heating, phase...
Coincidence time resolution (CTR) of scintillation detectors based on Ce- and Mg-codoped Gd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga O xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> (GAGG) crystals high-density silicon photomultipliers (SiPMs) is shown to be 165 ps (full width at half maximum) for 511-keV <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink">...
The influence of co-doping Gd3Al2GA3O12:Ce (GAGG:Ce) scintillator with magnesium on the rise time luminescence response was studied in two GAGG:Ce crystals grown nominally identical conditions except Mg one them. Time-resolved photoluminescence spectroscopy and free carrier absorption techniques were exploited. It is evidenced that decreases down to sub-picosecond domain. Meanwhile, light yield by ∼20%. Thus, feasibility exploitation fast edge for ultrafast timing scintillation detectors...