Myeong‐jin Lee

ORCID: 0000-0002-3136-2819
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Research Areas
  • 2D Materials and Applications
  • Video Coding and Compression Technologies
  • Graphene research and applications
  • Image and Video Quality Assessment
  • Advanced SAR Imaging Techniques
  • Advanced Wireless Network Optimization
  • Video Surveillance and Tracking Methods
  • Advanced Data Compression Techniques
  • Embedded Systems Design Techniques
  • Advanced Vision and Imaging
  • Synthetic Aperture Radar (SAR) Applications and Techniques
  • Advanced Memory and Neural Computing
  • Advanced Image and Video Retrieval Techniques
  • MXene and MAX Phase Materials
  • Sparse and Compressive Sensing Techniques
  • Microwave Imaging and Scattering Analysis
  • Network Traffic and Congestion Control
  • Quantum and electron transport phenomena
  • Advanced Steganography and Watermarking Techniques
  • Wireless Communication Security Techniques
  • Energy Harvesting in Wireless Networks
  • Medical Image Segmentation Techniques
  • Multimedia Communication and Technology
  • Interconnection Networks and Systems
  • Photonic and Optical Devices

Sungkyunkwan University
2017-2024

Korea Aerospace University
2012-2024

Hanwha Solutions (South Korea)
2023

Chosun University
2021-2022

Yonsei University
2019

Suwon Research Institute
2019

Ulsan National Institute of Science and Technology
2018

Applied Radar (United States)
2016

Konkuk University
2015

Kyungsung University
2005-2006

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The of a backward rectifying diode, Zener forward obtained from the heterojunction through thickness modulation BP flake or back gate modulation. Moreover, tunnel with precursor to negative differential resistance can be realized by applying dual gating solid polymer electrolyte layer as top dielectric material. Interestingly, steep subthreshold swing 55...

10.1021/acsnano.7b03994 article EN ACS Nano 2017-08-08

Currently 2D crystals are being studied intensively for use in future nanoelectronics, as conventional semiconductor devices face challenges high power consumption and short channel effects when scaled to the quantum limit. Toward this end, achieving barrier-free contact semiconductors has emerged a major roadblock. In contacts bulk metals, Fermi levels become pinned inside bandgap, deviating from ideal Schottky-Mott rule resulting significant suppression of carrier transport device. Here,...

10.1002/adma.201808231 article EN Advanced Materials 2019-05-08

Abstract Effective control of 2D transistors polarity is a critical challenge in the process for integrating materials into semiconductor devices. Herein, doping‐free approach developing tungsten diselenide (WSe 2 ) logic devices by utilizing van der Waals (vdWs) bottom electrical contact with platinum and indium as high low work function metal respectively reported. The device structure free from chemical disorder crystal defects arising deposition, which enables near ideal Fermi‐level...

10.1002/aelm.202001212 article EN Advanced Electronic Materials 2021-03-30

Abstract Surface charge transfer doping (SCTD) using oxygen plasma to form a p‐type dopant oxide layer on transition metal dichalcogenide (TMDs) is promising technique for 2D TMDs field‐effect transistors (FETs). However, patternability of SCTD key challenge effectively switch FETs. Herein, simple method selectively pattern degenerately (p + )‐doped WSe 2 FETs via electron beam (e‐beam) irradiation reported. The effect the selective e‐beam confirmed by gate‐tunable optical responses seamless...

10.1002/advs.202202465 article EN Advanced Science 2022-07-19

A novel algorithm is proposed for robust step detection irrespective of mode and device pose in smartphone usage environments. The dynamics smartphones are decoupled into a peak-valley relationship with adaptive magnitude temporal thresholds. For extracted peaks valleys the acceleration, defined as consisting peak its adjacent valley. Adaptive thresholds average deviation applied to suppress pseudo or that mostly occur during transition among modes poses. time intervals between consider...

10.3390/s151027230 article EN cc-by Sensors 2015-10-26

WSe<sub>2</sub> FET oxidized by plasma. Channel resistance decreases exponentially with increasing work function, approaching thermal limit.

10.1039/c9nr05881h article EN Nanoscale 2019-01-01

Abstract Tungsten diselenide (WSe 2 ) is attracting attention because of its superior electronic and optoelectronic properties. In recent years, the number research works related to WSe ‐based field‐effect transistors (FETs) has increased dramatically. Nonetheless, performance 2D influenced sensitively by metal–semiconductor (MS) interface states, where Fermi‐level pinning substantial. This explores depinning doping with an n‐type polymer. this work, spin‐coated polyvinyl alcohol (PVA) used...

10.1002/aelm.202000616 article EN Advanced Electronic Materials 2020-09-11

Abstract Doping is a key technique for forming complementary metal‐oxide‐semiconductor (CMOS) that basic building block current state‐of‐the‐art semiconductor devices. However, conventional doping methods such as ion implantation are unsuitable 2D materials due to their ultra‐thinness accommodate substitutionally doped atomic structures and vulnerability high energy bombardment. Chemical have been widely used induce charge exchange transfer; however, they subjected surface contamination...

10.1002/aelm.202100449 article EN Advanced Electronic Materials 2021-07-02

Synthetic aperture radar (SAR), which can generate images of regions or objects, is an important research area radar. The chirp scaling algorithm (CSA) a representative SAR imaging algorithm. CSA has simple structure comprising phase compensation and fast Fourier transform (FFT) operations by replacing interpolation for range cell migration correction (RCMC) with compensation. However, real-time processing still requires many computations long execution time. Therefore, it necessary to...

10.3390/s23020959 article EN cc-by Sensors 2023-01-14

In this paper, we propose a method for reconstructing synthetic aperture radar (SAR) images by applying compressive sensing (CS) technique to sparsely acquired sensor data. general, SAR image reconstruction algorithms require data at regular spatial intervals. However, when the speed of radar-equipped platform is not constant, it difficult consistently perform acquisitions. Therefore, used CS-based signal recovery efficiently reconstruct even acquisition was performed. proposed method,...

10.3390/s21217283 article EN cc-by Sensors 2021-11-01

Abstract Localized trap density ( D t ) at the 2D channel–gate dielectric interface and its relative strength to carrier–carrier interactions depending on thickness of channel can determine nature a metal–insulator transition (MIT) in materials. Here, MIT occurring WSe 2 devices is systematically analyzed by varying from ≈20 nm monolayer explore effects MIT. The corresponding critical carrier increases ≈8.30 × 10 11 9.45 12 cm –2 ≈6.02 1.13 13 eV –1 as decreases monolayer. These large...

10.1002/aelm.202200046 article EN Advanced Electronic Materials 2022-03-29

Abstract Two‐dimensional (2D) black phosphorus (BP) has attracted increasing interest for next‐generation solid‐state device applications due to its unique blend of versatile properties. The ultrathin physique and low thermal conductivity (40–20 Wm −1 K ) BP make it susceptible premature Joule breakdown under moderate electric field induced by inefficient nonhomogeneous energy dissipation. Here, is reported that the back‐gate suffers merely 4 MV m value with centrally localized fracture....

10.1002/admi.201801528 article EN Advanced Materials Interfaces 2018-11-23

Strong Fermi-level pinning is observed in WSe 2 devices with edge contacts due to the presence of an oxide layer at etched interface.

10.1039/d1tc04148g article EN Journal of Materials Chemistry C 2021-12-09

This paper presents a polar-format algorithm (PFA)-based synthetic-aperture radar (SAR) processor that can be mounted on small drone to support video SAR (ViSAR) imaging. For mounting, it requires miniaturization, low power consumption, and high-speed performance. Therefore, meet these requirements, the design was based field-programmable gate array (FPGA), implementation results are presented. The proposed PFA-based consists of both an interpolation unit fast Fourier transform (FFT) unit....

10.3390/electronics13122401 article EN Electronics 2024-06-19

In this paper, the architecture of a video analytics coprocessor is proposed for multi-channel embedded digital recorder (DVR) systems. A reference algorithm multi-object tracking and divided into independent processing steps based on data flow. Each step designed in hardware or software considering its computational complexity required system resources. Pixelwise requiring large amount resources, such as frame difference background modeling, are with direct memory access (DMA) controllers....

10.1109/tce.2012.6415008 article EN IEEE Transactions on Consumer Electronics 2012-11-01

In this paper, a multi-frame based homography estimation method is proposed for video stitching in static camera environments. A that robust against spatio-temporally induced noise can be estimated by intervals, using feature points extracted during predetermined time interval. The point with the largest blob response each quantized location bin, representative point, used matching pair of sequences. After from camera, interval random sample consensus (RANSAC) on matched points, their...

10.3390/s20010092 article EN cc-by Sensors 2019-12-22

Abstract Background Cathelicidin, an antimicrobial peptide, plays a key role in regulating bacterial killing and innate immunity; however, its skeletal muscle function is unknown. We investigated the potential of cathelicidin pathology resulting from acute injury Duchenne muscular dystrophy (DMD) mice. Methods Expression changes localization mouse cathelicidin‐related peptide (Cramp) were examined normal mice treated with chemicals (cardiotoxin BaCl 2 ) or dystrophic DMD models (mdx,...

10.1002/jcsm.13065 article EN cc-by-nc-nd Journal of Cachexia Sarcopenia and Muscle 2022-09-04

This paper presents a high-level design methodology applied on network SoC using SystemC. The topic will emphasize approach for intensive architecture exploration and verifying cycle accurate SystemC models comparative to real Verilog RTL models. Unlike many designs, we started the project with working in hands, which later compared our to. Moreover, were able use on-chip test board performance simulation data verify SystemC-based platform. illustrates that design, could have same accuracy...

10.5555/968878.969030 article EN Design, Automation, and Test in Europe 2004-02-16

Intelligent video surveillance systems detect pre-configured events through background modeling, foreground and object extraction, tracking, event detection. Shadow regions inside frames sometimes appear as objects, interfere with ensuing processes, finally degrade the detection performance of systems. Conventional studies have mostly used intensity, color, texture, geometric information to perform shadow in daytime video, but these methods lack capability removing shadows nighttime video....

10.3390/s17030659 article EN cc-by Sensors 2017-03-22

In this paper, we propose a range-Doppler algorithm (RDA)-based synthetic aperture radar (SAR) processor for real-time SAR imaging and present FPGA-based implementation results. The processing steps the RDA include range compression, cell migration correction (RCMC), azimuth compression. A matched filtering unit (MFU) an RCMC (RPU) are required processing. Therefore, proposed RDA-based contains MFU that uses mixed-radix multi-path delay commutator (MRMDC) FFT RPU. reduces memory requirements...

10.3390/electronics10172133 article EN Electronics 2021-09-02

Abstract Highly anisotropic black phosphorus (BP) has recently attracted significant interest for electronic and optoelectronic devices. To date, in‐plane properties of BP field effect transistors (FETs) have been reported only with top contact. However, the 2D contact geometry is unable to measure electrical conductance precisely, due presence out‐of‐plane conductance, resulting in underestimation anisotropy. Here, 1D edge method employed precisely along armchair zigzag directions without...

10.1002/aelm.202100988 article EN Advanced Electronic Materials 2021-12-08

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10.2139/ssrn.4796754 preprint EN 2024-01-01
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