A5102705675- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- ICT in Developing Communities
- Conducting polymers and applications
- ZnO doping and properties
- Neuroscience and Neural Engineering
- Advancements in Semiconductor Devices and Circuit Design
- Graphene research and applications
- Transition Metal Oxide Nanomaterials
Sungkyunkwan University
2023-2024
Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate impact different types nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From this study, were able to suggest an analytical...
Achieving low contact resistance (RC ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, electrical characteristics semimetal (Sb) and normal metal (Ti) contacted MoS2 devices are systematically analyzed as a function top bottom gate-voltages (VTG VBG ). The contacts not only significantly reduce RC but also induce strong dependence on VTG , sharp contrast to Ti that modulate by varying . anomalous behavior attributed strongly...
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