A5084463335- Photonic and Optical Devices
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Advanced Fiber Laser Technologies
- Photonic Crystals and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Optical Network Technologies
- Advanced Fiber Optic Sensors
- Silicon Nanostructures and Photoluminescence
- Nanofabrication and Lithography Techniques
- Mobile Ad Hoc Networks
- Neural Networks and Reservoir Computing
- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Cooperative Communication and Network Coding
- Advanced Surface Polishing Techniques
- Advanced Wireless Network Optimization
- Laser Material Processing Techniques
- Synthesis and properties of polymers
- Integrated Circuits and Semiconductor Failure Analysis
- Optical Coatings and Gratings
- Laser-Matter Interactions and Applications
- Magneto-Optical Properties and Applications
- Advanced Frequency and Time Standards
National Institute of Advanced Industrial Science and Technology
2016-2025
Mitsubishi Electric (Japan)
2023
Photonics Electronics Technology Research Association
2019-2023
Petra University
2022
Gorgias Press (United States)
2014-2020
Institute of Electrical and Electronics Engineers
2014
Tokyo Institute of Technology
2004-2008
Fujitsu (Japan)
2007
We demonstrate a 32 × path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on small, 11 25 mm2 die. The is fabricated 300-mm-diameter silicon-on-insulator wafer by complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the chip flip-chip bonded to ceramic interposer arranges electrodes in 0.5-mm pitch land grid array. on-chip loss...
We fabricate a 32 × silicon photonics switch on 300-mm silicon-on-insulator wafer by using our complementary metal-oxide-semiconductor pilot line equipped with an immersion ArF scanner and demonstrate average fiber-to-fiber insertion loss of 10.8 dB standard deviation 0.54 dB, on-chip electric power consumption 1.9 W. The the are approximately 1/60, less than 1/4 previous results, respectively. These significant improvements achieved design fabrication optimization waveguides intersections...
We report on a path-independent insertion-loss (PILOSS) 8 × matrix switch based Si-wire waveguides, which has record-small footprint of 3.5 2.4 mm2. The PILOSS consists 64 thermooptic Mach-Zehnder (MZ) switches and 49 low-crosstalk intersections. Each the MZ intersections employs directional couplers, enable composition low loss switch. demonstrate successful switching digital-coherent 43-Gbps QPSK signal.
We demonstrate a low-crosstalk 2 x thermo-optic switch with silicon wire waveguides. The device is based on array of Mach-Zehnder interferometer (MZI) switches. Lowest crosstalk levels -50 dB and -30 are obtained for 'bar' 'cross' switching states, respectively. An intersection in the important operation. power consumption one MZI element 40 mW total at most 160 mW.
We, for the first time, present ultrafast optical nonlinear response of a hydrogenated amorphous silicon (a-Si:H) wire waveguide using femtosecond pulses. We show cross-phase and cross-absorption modulations measured heterodyne pump-probe method estimate Kerr coefficient two-photon absorption waveguide. The pumping energy 0.8 eV is slightly lower than that required to achieve excitation at band gap a-Si:H (approximately 1.7 eV). An less 100 fs observed, which indicates free-carrier effect...
We fabricated and characterized a silicon photonics 8 × strictly non-blocking optical switch based on double-Mach-Zehnder (MZ) element switches. The double-MZ switches, each of which consisted an intersection two asymmetric MZ enabled the suppression crosstalk across wide wavelength range. exhibited average fiber-to-fiber insertion loss 11.2 dB -20 in bandwidth wider than 30 nm. Furthermore, we constructed polarization-diversity by using switches demonstrated 32-Gbaud dual-polarization,...
We fabricate and characterize a polarization-diversity 32 × silicon photonics switch by newly introducing SiN overpass waveguides onto our nonduplicate path-independent insertion-loss switch. The are used to simplify the optical paths with uniform path length between edge couplers matrix significantly reduce number of waveguide intersections. chip is fabricated using 300-mm silicon-on-insulator wafer pilot line. comprises more than 7,600 components, making this largest ever...
We review the research progress of strictly nonblocking optical switches based on silicon photonics. have developed a switch chip fabrication process complementary metal-oxide-semiconductor pilot line and electrical packaging technologies. demonstrated all-paths transmission switching up to 32 input ports × output with an average fiber-to-fiber insertion loss 10.8 dB. Furthermore, we operating bandwidth wider than 100 nm for -30 dB crosstalk double-Mach-Zehnder element in 8 switch. For...
Ultra-fast carrier decay, recently discovered in a hydrogenated amorphous silicon waveguide, can be exploited for pattern-effect-free all-optical signal processing based on optical Kerr nonlinearity. In this study, we utilized 10 Gbit/s RZ-OOK data stream as pump degenerate four-wave mixing low-loss waveguide. The propagation loss of the waveguide used was 1.0±0.2 dB/cm at 1550 nm. Unlike crystalline waveguides, no noticeable difference observed BER characteristics between cases PRBS 27−1 and 231−1.
We experimentally demonstrate a double-layer platform of silicon nitride and for ultralow-crosstalk multiport optical switches. By using overpass with large gap 1.5 µm, we achieve crosstalk less than -50 dB -45 almost entirely in the C-band 4 × 16 switches, respectively. To scalability platform, also measured 32 passive test device show that worst-case is feasible appropriate gate
We demonstrate an ultra-compact 32×32 path-independent-insertion-loss optical switch that integrates 1024 thermooptic MZ switches on SOI platform using ArF immersion lithography. On-chip loss of 19.7 dB and estimated crosstalk −20 are achieved.
The broadband vertical optical coupling of silicon (Si) photonics poses significant challenges regarding the use wavelength division multiplexing (WDM). grating coupler, a type device, strongly depends on wavelength. As an alternative, we developed another device using 45° curved micro-mirror. To experimentally demonstrate coupling, micro-mirror was designed based measured beam output from Si inverse taper waveguide and integrated photonic chip to coupling. Without additional lenses,...
To realize a new package substrate for co-packaged optics, silicon-photonics hybrid glass-epoxy was demonstrated. In the substrate, silicon photonics dies working as optical/electrical conversion engines are embedded. Additionally, it includes optical redistribution composed of polymer waveguides and mirror-based coupling structures between waveguides. A demonstration sample designed total bandwidth 10 Tbps using with arrayed waveguide gratings, wavelength splitters, polarization...
We developed ODU-XC, CDC-ROADM, and silicon photonics switch, built an eight-node network capable of 90Tbps based on NSI-CS standard protocol. Its energy consumption was orders magnitude lower than that achievable with IP routers.
We implemented a novel heater control scheme with high-energy header pulses applied to silicon Mach-Zehnder switches. Four five times faster switching time (5.8 μs and 4.4 μs) was achieved for heating-up cooling-down operations.
We tried to evaluate and predict the RC delay variability beyond 45 nm copper interconnects technologies. The as a normalized time distribution, is caused by line width/height variations due manufacturing process fluctuations. In order influence of resistivity size effect precisely, we improved Fuchs-Sondheimer (F-S) Mayadas-Shatzkes (M-S) models, in include height dependence grain size, applied it evaluation based on SPICE simulation. our results, found that 45nm node technology was...
A 4 × Si-wire path-independent insertion-loss optical switch having off-chip polarization diversity is demonstrated. The achieved using components of polarization-maintaining fiber arrays and fiber-based splitters combiners. on-chip loss 4.8 ± 0.5 dB obtained with a polarization-dependent below 1 dB. Crosstalk the measured to be -30 -20 for bandwidths 2.9 12.9 nm, respectively, all settings. residual differential group delay (DGD) <;8 ps. Penalty-free 100-Gb/s dual-polarization...
We previously proposed a new package substrate called active optical (AOP) to realize co-packaged optics. An redistribution technology on silicon photonics dies was developed fabricate the AOP substrate. It is composed of polymer waveguide, with mirror-based coupling between and waveguides. The fabricated loss characterized in this study. average approximately 4 dB wavelength dependent ±1 were observed for range 1460–1600 nm. shown that low wavelength-dependent available owing broadband...
Introduction of optimized structures and a 5.5%-Δ-PLC fiber connector achieved the minimum fiber-to-fiber insertion loss 9.2 dB power consumption 1.9 W, which are 1/100 <1/4 previous switch, respectively.
Secure GbE communication by Y-00 protocol using noise masking for inter-datacenter connections is demonstrated in a dynamic optical path network testbed Tokyo. We achieve change with key re-synchronization between cipher transceivers.
We present a design- and process-optimized 8×8 silicon photonic switch exhibiting an ultralow on-chip loss, ultra-wide -30-dB crosstalk bandwidth low power consumption. A fully-integrated polarization-diversity is also fabricated characterized to promise its practical uses.
For practical and wide use of optical switches, cascadability high throughput are great significance. We demonstrate up to 8-stage cascaded operation a polarization-independent silicon photonics 8 × switch where 11-channel 32/44-Gbaud DP-16QAM signals loaded on all the paths in cyclic way. The results verify that is capable offering 48.2 Tb/s with wall-plug energy efficiency 0.37 pJ/bit. Using an additional module characteristics equivalent switch, 9-stage also emulated. successful...
We discuss and demonstrate the application of Turbo Pulse method to silicon-photonic MZI based tunable filter. The tuning time was shortened no longer than 7.0 μs from 36 without method.