A5040805992- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Phase-change materials and chalcogenides
- 2D Materials and Applications
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Photonic and Optical Devices
- Magneto-Optical Properties and Applications
- Thermal Radiation and Cooling Technologies
- Quantum and electron transport phenomena
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- Theoretical and Computational Physics
- Silicon Nanostructures and Photoluminescence
- Autonomous Vehicle Technology and Safety
- Electronic Packaging and Soldering Technologies
- Aerogels and thermal insulation
- Quantum Information and Cryptography
- Nanomaterials and Printing Technologies
- Surface Roughness and Optical Measurements
- Optical properties and cooling technologies in crystalline materials
- Human-Automation Interaction and Safety
- Optical Polarization and Ellipsometry
Chemnitz University of Technology
2019-2023
Tokyo University of Agriculture and Technology
2014-2015
Fujitsu (Japan)
2007
We tried to evaluate and predict the RC delay variability beyond 45 nm copper interconnects technologies. The as a normalized time distribution, is caused by line width/height variations due manufacturing process fluctuations. In order influence of resistivity size effect precisely, we improved Fuchs-Sondheimer (F-S) Mayadas-Shatzkes (M-S) models, in include height dependence grain size, applied it evaluation based on SPICE simulation. our results, found that 45nm node technology was...
Abstract The refractive index and the extinction coefficient are usually inherent (noncontrollable) material characteristics. Recently, it was reported that reflectivity of graphene in mid‐infrared spectral range can be modified by an external bias. This report attracted much attention, but controllable frequency/energy is too narrow for possible applications. In this work, demonstrated potential not limited to wavelengths, spans a wider including visible range. Here, back‐gated bilayer...
We report the optical and magneto-optical properties of amorphous crystalline Co60Fe20B20 films with thicknesses in range 10 nm to 20 characterized using spectroscopy ellipsometry (SE) Kerr effect (MOKE) spectroscopy. derived spectral dependence dielectric tensor from experimental data for samples prior after annealing vacuum. The features function can be directly related transitions between electronic states observed changes upon ascribed an increase ordering CoFeB.
Abstract Since their proposal by Esaki, superlattices have been observed to fascinating features such as quantum size effects, negative differential resistance, and sequential resonant tunneling. However, the technology threshold for fabricating is high, requiring methods like molecular beam epitaxy (MBE) atomic layer deposition (ALD), among others, even amorphous materials. Thus, desirable from not extensively utilized. It shown that of Se As 2 3 (superlattice‐Se), fabricated using...
Regulating the temperature of buildings has highest expenditure energy (35–40%); thus, transparent heat reflectors (THRs) have been at forefront passive cooling technology due to its ability reflect near-infrared (NIR) wavelengths without compromising optical transmission. Current designs like metallic thin films and dielectric–metal–dielectric are expensive face complications with material incompatibility, oxidation, interdiffusion, which hamper their performance. A cost-effective THR using...
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) bulk alpha-In2Se3 samples over a photon energy range 1.0--4 eV, compare with ab initio density functional theory calculations, including bandstructures G0W0 calculations.
We demonstrate single photon counting of terahertz (THz) waves transmitted from a local THz point source through coplanar two-wire waveguide on GaAs/AlGaAs heterostructure crystal. In the electrically driven all-in-one chip, quantum Hall edge transport is used to achieve noiseless injection current for monochromatic fields. The fields are coupled metal and over macroscopic scale greater than wavelength (38 μm in GaAs). propagating counted as individual photons by quantum-dot single-electron...
Abstract This work presents a combined optical and magneto‐optical spectroscopic study of thulium iron garnet (Tm 3 Fe 5 O 12 , TmIG) films on substituted gadolinium gallium (Gd 2.6 Ca 0.4 Ga 4.1 Mg 0.25 Zr 0.65 sGGG) substrates. Spectroscopic ellipsometry, transmission spectroscopy, Kerr effect spectroscopy Raman results are presented for TmIG with thickness in the range from 20 to 300 nm grown sGGG by pulsed laser deposition. The complex dielectric functions determined compared previously...
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with constant of 2.25 has substantial advantage in terms RC delay reduction compared other potential architectures such as hybrid and tri-level dielectrics. Combination ultra-thinned barrier metal lowered 86% listed ITRS 2006 update.
We successfully encapsulated Cu wiring with an ultra-thin self-forming barrier consisting of MnO and a bi-layer MnO/Ta. TDDB test showed that the ILDs lifetime increased by factor 100 over our control sample. The EM more than 47. For via chains are vulnerable to thermal stress, no SIV failure. resistance was 13% lower expect have greater endurance electrical stresses for use in 32-nm nodes beyond.
Amorphous Se is a well-known photoconductor from its early applications in xerography and ultra-sensitive photodetectors like the High-gain Avalanche Rushing Photoconductor (HARP) device. The established way of fabricating for HARP rotational thermal evaporation using multilayers As2Se3. However, electronic effects multilayering have not yet been clarified. In this report, we investigated multilayer structure as superlattice As2Se3 fabricated show that results uniformization defect levels...
Summary form only given. Recent progress combining solid-state physics with quantum optics has opened up exciting possibilities for generating optical phenomena in the integrated circuits. Given trade-off between photon energy and wavelength, spatial scale terahertz (THz) region (wavelengths of 100 μm, energies 10 meV) may be an appropriate frequency range manipulating both aspects wave-particle duality electromagnetic fields on devices. Indeed, detection becomes possible by using...
Abstract Periodic arrays of metallic nanostructures were fabricated by electron beam lithography and studied means spectroscopic imaging ellipsometry in the near infrared to ultraviolet spectral ranges. The sample consists gold nanodisc nanorod gratings on a silicon substrate. Spectroscopic ellipsometry, allowing for simultaneous observation all with microscopic resolution, was used systematically analyze varying grating nanostructure parameters. ellipsometric spectra obtained full in‐plane...
本研究は，都市部での自動運転車の導入時に増加が予想される道路上での乗降に着目し，路肩空間の整備形態が道路交通環境へ与える影響について定量的に把握した．分析では，第4種第1級・第2級道路を対象に，駐車頻度や路肩空間の形態を変化させて単路部での交通シミュレーションを行い，旅行速度や遅延時間を評価指標とした．結果より，停車帯のない路上駐車型は，高い駐車頻度の場合に大幅な旅行速度の低下と遅延時間の増大を引き起こすことを確認した．また停車帯を設けた場合においても，乗降可能な区間が長いほど減速機会が生じやすくなることから，乗降場を限定して道路上での乗降を抑制していくことが，都市部での自動運転車の導入の際に重要となることを明らかにした．
Superlattices exhibit desirable electronic properties such as resonant tunneling. However, there is a high technology barrier for fabricating structures, using methods molecular beam epitaxy (MBE). We fabricated multilayer structures of amorphous materials the technologically simple method rotational evaporation, and observed physical characteristics related to superlattice structures. The multi-layer structure was confirmed Time Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). energy band...
In semiconductor device history, a trend is observed where narrowing and increasing the number of material layers improve functionality, with diodes, transistors, thyristors, superlattices following this trend. While promise unique they are not widely adopted due to technology barrier, requiring advanced fabrication, such as molecular beam epitaxy lattice-matched materials. Here, method design quantum devices using amorphous materials physical vapor deposition presented. It shown that...
Abstract Superlattice structures have a variety of electrical and optical properties that allow for interesting applications like quantum cascade lasers ultrasensitive photo-detectors. However, such require high-tech fabrication methods molecular beam epitaxy, this technology barrier means these promising devices are not in widespread use. Using the simple method rotational evaporation, we fabricated films with alternating multi-nanolayers amorphous selenium (Se) arsenic selenide (As 2 Se 3...