A5043272484- Radio Frequency Integrated Circuit Design
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Microwave Engineering and Waveguides
- Semiconductor materials and devices
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Silicon and Solar Cell Technologies
- 3D IC and TSV technologies
- Advancements in PLL and VCO Technologies
- VLSI and Analog Circuit Testing
- Electronic Packaging and Soldering Technologies
- Optical Wireless Communication Technologies
- Electromagnetic Compatibility and Noise Suppression
- Optical Network Technologies
- Antenna Design and Analysis
- Electrostatic Discharge in Electronics
- Energy Harvesting in Wireless Networks
- Advanced Photonic Communication Systems
- Radiation Detection and Scintillator Technologies
- Superconducting and THz Device Technology
- Nanomaterials and Printing Technologies
- Advanced Sensor and Energy Harvesting Materials
- Soft Robotics and Applications
Georgia Institute of Technology
2020-2025
Conference Board
2022
Soft materials and compliant actuation concepts have generated new design control approaches in areas from robotics to wearable devices. Despite the potential of soft robotic systems, most designs currently use hard pumps, valves, electromagnetic actuators. In this work, we take a step towards fully robots by developing actuator architecture using gallium-indium liquid metal conductors, as well permanent magnetic iron composites. Properties are first characterized then co-fabricated create...
This letter presents a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> -band frequency quadrupler with current-reusing stacked push–push doubler (PPD) stages, implemented in 180-nm SiGe BiCMOS process. A series balun is used between two PPDs to generate differential signals for the second PPD stage, while also allowing half of stage's current be reused first thereby...
The application of radiation-hardening by design (RHBD) to the low-noise amplifier (LNA) in an RF communications receiver has promise for improving data fidelity applications subject single-event effects (SEEs). In order overcome challenges empirically modeling single-event-transient (SET) propagation receivers, calibrated technology computer-aided (TCAD) is used perform mixed-mode simulations and identify viable RHBD approaches SiGe cascode LNAs. Example results at X-band (8–12 GHz) are...
This paper presents a 4-bit D-band SiGe vector modulator phase shifter (VMPS). A novel transmission line-based delay line topology is used to generate differential quadrature signals that are weighted by 4 VGAs and cascaded with buffer amplifier, achieving wide bandwidth, moderate gain, low power consumption. The VMPS achieves 1.5 dB peak average gain 3-dB bandwidth from 110 -145 GHz. RMS amplitude errors 1.2 8.5∘, respectively, the circuit consumes 20.3 mW of DC V supply. To authors best...
The total-ionizing-dose response of third-generation SiGe HBTs was investigated at elevated temperatures (80 °C and 130 °C) compared with the 30 °C. devices show less damage to irradiation higher temperatures. Annealing experiments TCAD simulations are used investigate degradation mechanism. reduced in forward mode is caused by increased annealing interface traps primarily due diffusion reactions H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The propagation of long-duration single-event transient (SET) tails in radio-frequency (RF) amplifiers implemented with silicon-on-insulator (SOI) complementary metal–oxide semiconductor (CMOS) was investigated using laser pulses to emulate heavy-ion strikes. Transients were recorded and analyzed CMOS transistors, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Ku$ </tex-math></inline-formula> -band...
This letter presents a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}$ </tex-math></inline-formula> -band subharmonic downconversion mixer for next-generation communications and implemented in 90-nm SiGe BiCMOS technology. The design consists of cascoded push–push doubler wideband transimpedance amplifier (TIA), it utilizes novel, 180° hybrid coupler topology to achieve wide bandwidth, moderate...
To support the use of SiGe BiCMOS for future mission targets such as Europa, which are subject to high radiation doses and cryogenic temperatures, heterojunction bipolar transistors (HBTs) were exposed 1-MeV electrons 5 Mrad(Si) at 300, 200, 115 K. The presented results first in situ characterization electron irradiation temperatures HBTs. Lower temperature was found improve total ionizing dose (TID) tolerance. Physical mechanisms behind this improved tolerance with cooling examined, trap...
Ion-induced SETs were captured from a germanium photodiode (PD) in an integrated silicon photonics technology platform. Statistics 400 ion-strike events extracted for various optical powers and LETs incident on the PD. The results show that transient peak decreases with increasing power. TCAD simulation indicate photo-generated carriers decrease built-in electric field of PD, thereby decreasing peak. also increase probability Auger recombination, which further reduces under illuminated...
The present article applies the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> -nearest neighbors ( -NN) machine learning (ML) algorithm to detect and correct single-event upsets (SEUs). In particular, this work focuses on SEUs resulting from transients in RF systems carrying modulated data. Pulsed-laser measurements were performed, used train separate -NN algorithms these...
The rapid development in micro additive manufacturing (μAM) of metals has the potential to enable a new generation miniaturized devices capable achieving complex 3D geometries that can be integrated with other conventional methods, paving way for range applications across multiple fields. In this work, novel metal method is utilized demonstrate first time fabrication micro-scale interconnect structures operating up 150 GHz. μAM process consists localized electrodeposition utilizes an atomic...
A comparison of laser-induced single-event transients in silicon-germanium heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed applications and high-breakdown is presented. significantly lower-amplitude transient (SET) response at low laser pulse energies was observed the device compared to device. At high energies, however, amplitudes converged produced a nearly identical response. three-dimensional technology computer-aided design (TCAD) model SiGe HBT used...
A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$</tex-math> </inline-formula> -band stacked quadrupler with a dual-driven second-stage doubler is presented that, to the best of authors' knowledge, demonstrates highest drain efficiency in silicon while maintaining competitive output power and harmonic rejection. Implemented 90-nm SiGe BiCMOS process, proposed topology circumvents need for an interstage...
Europa lies in Jupiter's colossal radiation belt, producing surface conditions that are so severe (5 Mrad[Si]) most modern electronics would experience degradation a matter of days. This challenge, coupled with the sub-100 K temperatures, leads to very hostile environment for viable electronic infrastructure. To help enable future mission landing on Europa's surface, there must be efficient terrestrial testing facilities place model effects requisite microelectronics.The Jet Propulsion...
RF communications systems in space flight are subject to single-event upsets (SEUs) due drop-out of the local oscillator during a transient (SET), named here as (SEDO). If duration SEDO is substantial, it inevitably compromises data. To help alleviate SEUs SEDO, present work compares dynamics and recovery times two types LC oscillators with matched performance: cross-coupled differential-Colpitts. The responses both were tested using pulsed laser deposit charge via two-photon absorption...
Integrated silicon microwave <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pin</i> diodes are exposed to 10-keV X-rays up a dose of 2 Mrad(SiO <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) and 14-MeV fast neutrons fluence <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$ </tex-math></inline-formula> cm <sup...
micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, diode keeps a measurement error below 0.5 C. In this harsh radiation environment and beside good tolerance thermo-diodes materials ionizing dose, thermo-diode located on heating constant sensitivity. demonstrated resistance integrated neutron radiations can extend use in...