A5056391910- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Semiconductor materials and devices
- Topological Materials and Phenomena
- Semiconductor materials and interfaces
- Inorganic Chemistry and Materials
- Medical Imaging Techniques and Applications
- Surface and Thin Film Phenomena
- Boron and Carbon Nanomaterials Research
- Cell Adhesion Molecules Research
- Plasmonic and Surface Plasmon Research
- Advanced Photocatalysis Techniques
- Lanthanide and Transition Metal Complexes
- Superconductivity in MgB2 and Alloys
- ICT Impact and Policies
- Material Properties and Applications
- Crystal Structures and Properties
- Cancer Genomics and Diagnostics
- Building Energy and Comfort Optimization
- ZnO doping and properties
Pennsylvania State University
2016-2024
New School
2022
Park University
2017
The rise of two-dimensional (2D) materials research took place following the isolation graphene in 2004. These new 2D include transition metal dichalcogenides, mono-elemental sheets, and several carbide- nitride-based materials. number publications related to these emerging has been drastically increasing over last five years. Thus, through this comprehensive review, we aim discuss most recent groundbreaking discoveries as well opportunities remaining challenges. This review starts out by...
Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad platform for investigation, development of nano- atomic-scale devices. A significant focus the last decade's research this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation dimensionality, substrate engineering, strain, doping (Mak et al 2010 Phys. Rev. Lett. 105 136805; Zhang 2017 Sci. Rep. 7 16938; Conley 2013...
Abstract Doping is a fundamental requirement for tuning and improving the properties of conventional semiconductors. Recent doping studies including niobium (Nb) molybdenum disulfide (MoS 2 ) tungsten (W) diselenide (MoSe have suggested that substitutional may provide an efficient route to tune type suppress deep trap levels 2D materials. To date, impact on structural, electronic, photonic in situ‐doped monolayers remains unanswered due challenges strong film substrate charge transfer,...
Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004.
The utilization of alkali salts, such as NaCl and KI, has enabled the successful growth large single domain fully coalesced polycrystalline two-dimensional (2D) transition-metal dichalcogenide layers. However, impact salts on photonic electronic properties is not established. In this work, we report alkali-free epitaxy MoS2 sapphire benchmark against alkali-assisted MoS2. This study demonstrates that although can dramatically increase size monolayer by 20 times, it also induce strong optical...
Low-temperature synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is a key challenge for their integration with complementary metal-oxide-semiconductor (CMOS) technology at 'back-end-of-line (BEOL)'. Most low-temperature utilizes alkali salts, oxide-based metals, and methyl-group based chalcogen precursors which do not meet current BEOL requirements contaminant-free manufacturing process scalability. In this study, we benchmark carbon salt-free fully coalesced,...
Large area 2D MoS<sub>2</sub> and WSe<sub>2</sub> are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling interlayer charge transfer is carefully studied. This work shows that few layer film the appropriate choice towards device application of synthetic 2D/3D heterostructures.
The field of two-dimensional (2D) materials has witnessed several significant advancements in a short period time. There have been extensive research efforts dedicated to this and an expanding community researchers built around the same. focus review article is on most recent milestones aspects 2D with emphasis transition metal dichalcogenides, such as improved synthesis property engineering, approaching from both experimental theoretical viewpoints. also attempt at highlighting some...
Tantalum disulfide (TaS2) is a transition metal dichalcogenide (TMD) that exhibits phase induced electronic property modulation at low temperature. However, the appropriate must be grown to enable semiconductor/metal of interest for next generation applications. In this work, we demonstrate direct and controllable synthesis ultra-thin 1T-TaS2 2H-TaS2 on variety substrates (sapphire, SiO2/Si, graphene) via powder vapor deposition. The process leads single crystal domains ranging from 20 200...
Near-infrared-to-visible second harmonic generation from air-stable two-dimensional polar gallium and indium metals is described. The photonic properties of 2D metals, including the largest second-order susceptibilities reported for (approaching 10 nm/V), are determined by atomic-level structure bonding two-to-three-atom-thick crystalline films. bond character evolved covalent to metallic over a few atomic layers, changing out-of-plane metal–metal distances approximately ten percent (0.2 Å),...
Abstract This work is a systematic experimental and theoretical study of the in‐plane dielectric functions 2D gallium indium films consisting two or three atomic metal layers confined between silicon carbide graphene with corresponding bonding gradient from covalent to metallic van der Waals type. k ‐space resolved free electron bound contributions optical response are identified, latter pointing towards existence thickness dependent quantum confinement phenomena. The resonance energies in...
Abstract Beyond the intrinsic properties of 2D materials, another advantage is tunability that follows from their low dimensionality. Here, large‐area Nb‐doped MoS 2 monolayer films deposited by metal organic chemical vapor deposition can function as electrical contacts or sensors are demonstrated. Compared to pristine , exhibits a relatively faster growth rate and quenched PL due formation mid‐gap energy bands. When Nb concentration reaches 5 at%, doped shows clear p‐type characteristics,...
Layered MoS2 nanostructures are attractive candidates as high-capacity anodes for lithium-ion batteries (LIB). However, the low intrinsic electrical conductivity of limits its rate performance. Herein, we demonstrate that can be significantly improved by adding V atoms substitutionally via a two-step approach includes electrodeposition amorphous followed solid-state reaction is able to crystallize layered material and introduce into lattice. This also has following advantages: (i) scalable...
The intercalation of a molecule or ion in layered structure is key to enhancing energy storage, material conductivity, intercalant structural ordering, and the formation two-dimensional (2D) superconducting states. process modifies vibrational host, which can be monitored non-invasively by Raman spectroscopy. However, detected spectral shifts may originate from variety phenomena, generally making technique an indirect means identifying success. Here, we discuss newly discovered low-frequency...
Scalable synthesis of two-dimensional gallium (2D-Ga) covered by graphene layers was recently realized through confinement heteroepitaxy using silicon carbide substrates. However, the thickness, uniformity, and area coverage 2D-Ga heterostructures have not previously been studied with high-spatial resolution techniques. In this work, we resolve measure heterostructure thicknesses scanning electron microscopy (SEM). Utilizing multiple correlative methods, find that SEM image contrast is...
The experimental realization of two-dimensional (2D) gallium nitride (GaN) has enabled the exploration 2D materials beyond boron nitride. Here we demonstrate one possible pathway to realizing ultra-thin layers through a two-step process involving synthesis naturally layered, group-III chalcogenides (GIIIC) and subsequent annealing in ammonia (ammonolysis) that leads an atomic-exchange chalcogen nitrogen species 2D-GIIICs. effect nitridation differs for indium selenide, where selenide...
In article number 1706950, Joshua A. Robinson and co-workers demonstrate in-situ Re doping of synthetic monolayer MoS2 with ≈1 at% on r-plane sapphire. Electronic measurements density functional theory calculations show that 1 achieves nearly degenerate n-type doping. Low-temperature photoluminescence reveals a suppression defect emission, resulting from the passivation defects due to presence Re. Picture Credit: Donna Deng.
Abstract
This manuscript presents a brief review of previous works related to synthesis 2D materials via metal-organic chemical vapor deposition. Additionally, heterostructures based on tungsten diselenide and epitaxial graphene are discussed.
The oxidation- and air-stability of 2D gallium-intercalated monolayer epitaxial graphene was determined using correlative microscopy. Site-specific studies including AFM, scanning electron microscope, cross section STEM-HAADF, EELS revealed that the oxygen signal detected by XPS AES analyses originated from oxidized surface carbon contaminants without presence at gallium layers. In addition, correlated with intact graphene. absence leads to oxidation in air, consequently losing crystallinity...
Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed interfacial and covalent bonding may be realized. Atomically thin layers formed at graphene (EG)/silicon carbide (SiC) interface indicate that EG/SiC interfaces provide this unique environment enable synthesis of a rich palette 2D not accessible...
Two-dimensional layered and atomically thin elemental superconductors may be key ingredients in next-generation quantum technologies, if they can stabilized integrated into heterostructured devices under ambient conditions. However, are largely unexplored outside ultra-high vacuum due to rapid oxidation, even 2D require complex encapsulation strategies maintain material quality. Here we demonstrate environmentally stable, single-crystal, few-atom-thick superconducting gallium, 2D-Ga,...
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The last decade has seen nearly exponential growth in the science and technology of two-dimensional materials. Beyond graphene, there is a huge variety layered materials that range properties from insulating to superconducting. Furthermore, heterogeneous stacking 2D also allows for additional “dimensionality” band structure engineering. In this talk, I will discuss recent breakthroughs atomic layer synthesis properties, including novel heterostructures nitrides. Our works include development...