In this initial study the electrochemically active region of a (LSCF) cathode was reconstructed in three dimensions using focused ion beam/scanning electron microscope. The volume totaled from free air surface to dense yttria-stabilized zirconia electrolyte interface. Various microstructural properties were measured, including overall porosity, closed graded area, tortuosity, triple-phase boundary length, and pore size. Electrochemical impedance spectroscopy data correlated microstructure.

A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection wave band in 6.7–11.5 μm and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak wavelength shifts from 7.6 8.4 when the rises 40 K. background limited performance (BLIP) detectivity (DBLIP*) measured at Vb=−2.0 V, T=77 K, λp=7.6 was found be 1.1×1010 cm Hz1/2/W, a corresponding responsivity of 0.22 A/W. high is attributed very low dark current long...

Nanostructured ion beam-modified Ge electrodes fabricated directly on Ni current collector substrates were found to exhibit excellent specific capacities during electrochemical cycling in half-cell configuration with Li metal for a wide range of rates. Structural characterization revealed that the nanostructured lose porosity but maintain electrical contact metallic substrate. These results suggest have great promise use as high performance battery anodes.

Low energy and low dose B+-implanted Si has been studied using transmission electron microscopy (TEM) secondary ion mass spectrometry (SIMS). Czochralski-grown (100) wafers were implanted with 4 keV B+ to a of 1×1014/cm2. Subsequently, anneals performed between 700 800 °C for times 15 s 8 h in an ambient atmosphere N2. SIMS results show transient enhanced diffusion (TED) the boron that saturates less than min all annealing temperatures studied. TED increase junction depth by at least 60 nm...

A cylindrically symmetric (azimuthal mode number m=0) resonant inductive (MO/RITM) radio frequency (rf) helicon wave high density plasma source is described. The consists of an antenna and bell jar generator immersed in a diverging magnetic field. Plasma generated this upstream region then transported along the field lines into low-field downstream processing chamber. propagating observed with rf spatial distribution propagation characteristics that obey theoretical m=0 dispersion relation....

Ion implants of 1 keV B+11 and 5 BF2+, to a dose 1×1015/cm2 at tilt angle 0°, were implanted into preamorphized (Si+,70 keV, 1×1015/cm2) wafers. These samples rapid thermal annealed in an ambient 33 ppm oxygen N2 very short times (<0.1 s spike anneals) 1000 1050 °C investigate the effects fluorine BF2 on transient enhanced diffusion (TED). By using relatively deep preamorphization 1450 Å, any difference damage between typically amorphizing nonamorphizing B is eliminated because entire...

As the Rp of ion implants steadily decreases an ever-increasing percentage implant species lies in oxide layer and is, therefore, not electrically active. For this reason, it is important to have analytical techniques capable accurately measuring thickness ultrathin layers. A round-robin study was performed on a series SiO2 films ranging from 0.3 20 nm order evaluate advantages disadvantages five commonly used techniques. High-resolution cross-section transmission electron microscopy (TEM)...

The annealing kinetics of extended defects in Si+-implanted Si have been investigated by situ plan-view transmission electron microscopy (TEM) samples a TEM. A 〈100〉 Czochralski-grown silicon wafer was implanted with 100 keV Si+ at the subamorphizing dose 2×1014 cm−2. Following implantation, effect 800 °C studied annealing. After 5 min °C, dense collection both {311} (3×1011/cm2) and small subthreshold dislocation loops (1×1011/cm2) were observed. Upon subsequent annealing, defect density...

A study of the effect Ge+ implantation energy, dose, and temperature on concentration atoms bound by extrinsic end-of-range dislocation loops in Si 〈100〉 wafers is presented. Plan-view cross-sectional transmission electron microscopy observations both as-implanted annealed (900 °C, 30 min) morphology were made. The implant energy was varied from to 150 keV, dose 2×1014 1×1016/cm2, using three different wafer-cooling methods during implantation. Increasing or wafer all resulted significant...

The III-nitride semiconductors have many attractive properties for field-emission vacuum electronics, including high thermal and chemical stability, low electron affinity, breakdown fields. Here, we report top-down fabricated gallium nitride (GaN)-based nanoscale diodes operable in air, with record ultralow turn-on voltages down to ∼0.24 V stable currents, tested up several microamps single-emitter devices. We leverage a scalable, GaN nanofabrication method leading damage-free smooth...

Solid phase epitaxial (SPE) annealing at low temperature has the advantage of high dopant activation and very little diffusion. However, due to thermal budget engaged in SPE, a large amount defects can exist area beyond original interface crystal pre-amorphized layer. These may cause severe junction leakage. They also diffusion deactivation following higher process. This work studies reverse behaviors during second step for SPE-formed p+/n using either 1 keV B+ or 5 BF2+ implants. Four-point...

Near-surface damage created by Ar+ ion milling in InP and GaAs was characterized capacitance-voltage, current-voltage, photoluminescence, channeling, transmission electron microscopy. We find no evidence of amorphous layer formation either material even for energies 800 eV. Low (200 eV) create thin (≤100 Å) damaged regions which can be removed annealing at 500 °C. Higher (≥500 more thermally stable layers actually show higher backscattering yields after °C annealing. Heating to is required...

The reactive ion etching of InP, InGaAs, and InAlAs in CCl2F2/O2 or C2H6/H2 discharges was investigated as a function the plasma parameters pressure, power density, flow rate, relative composition. etch rates these materials are factor 3–5× faster (∼600–1000 Å min−1) compared to (160–320 min−1). Significantly smoother morphologies obtained with provided composition is no more than 10%–20% by volume C2H6. At higher ethane compositions, polymer formation increases leading micromasking rough...

The activation of boron implanted at room temperature into germanium has been studied. In sharp contrast to all other group III elements forms a p-type layer before any postimplant annealing steps. Variable Hall effect measurements and deep level transient spectroscopy experiments indicate that the ions are electrically active as shallow acceptor centers over entire dose range (5×1011/cm2 1×1014/cm2) energy (25–100 keV) investigated, without annealing. concentration damage related is only...

The study of the solid-phase epitaxial growth (SPEG) process Si (variously referred to as epitaxy, regrowth, crystallization, and recrystallization) amorphized via ion implantation has been a topic fundamental technological importance for several decades. Overwhelmingly, SPEG studied (and viewed) single-directional where an advancing front between amorphous crystalline phases only one specific crystallographic orientation. However, it pertains device processing, must actually be considered...

A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility transistor was characterized using high-angle annular dark-field scanning transmission microscopy laser-assisted atom probe tomography. It revealed that is composed distinct Ni-oxide-rich Al-oxide-rich layers with no Ga-oxide detected. The results provide information potential importance in determining failure mechanisms improving...

Atomic force microscopy (AFM) and high-resolution transmission electron microscope (HRTEM) cross section imaging of individual gas cluster ion impact craters on Si(100) Si(111) substrate surfaces is examined. The comparison between 3 24 kV impacts from Ar O2 sources shown. Results for low fluence (1010 ions/cm2) onto a are compared with hybrid molecular dynamics (HMD) simulations. A HMD method used modeling Arn (n=135, 225) clusters, energies 24–50 eV/atom, surfaces. On Si(100), nearly...

Transient enhanced diffusion of boron in preamorphized and subsequently regrown Si was studied by secondary ion mass spectrometry (SIMS) transmission electron microscopy (TEM). A comparison 4 keV, 1× 1014/cm2 implants into crystalline Ge+ silicon undertaken. Upon annealing the B+ implant material exhibited well-known transient (TED). In this case peak distribution relatively immobile only B tail showed TED. second set samples, surface first a 180 1×1015/cm2 which produced an amorphous layer...