José Luis González

ORCID: 0000-0003-0198-2029
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Radio Frequency Integrated Circuit Design
  • Microwave Engineering and Waveguides
  • Advancements in PLL and VCO Technologies
  • Low-power high-performance VLSI design
  • Analog and Mixed-Signal Circuit Design
  • Electromagnetic Compatibility and Noise Suppression
  • Photonic and Optical Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • VLSI and Analog Circuit Testing
  • Semiconductor Lasers and Optical Devices
  • Electrostatic Discharge in Electronics
  • Antenna Design and Analysis
  • Optical Network Technologies
  • Advanced Antenna and Metasurface Technologies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Millimeter-Wave Propagation and Modeling
  • Semiconductor materials and devices
  • Advanced Photonic Communication Systems
  • 3D IC and TSV technologies
  • Ultra-Wideband Communications Technology
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Thermal and Kinetic Analysis
  • Advanced Wireless Communication Techniques
  • GaN-based semiconductor devices and materials

Université Grenoble Alpes
2016-2025

CEA LETI
2016-2025

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025

Qorvo (United States)
2020-2025

Columbia University
1997-2023

MWT Materials (United States)
2023

University of Wuppertal
2023

Chungnam National University
2023

Institute for Matching Person and Technology
2023

Apple (United States)
2023

With its ability to provide a single platform enabling variety of services, such as enhanced mobile broadband communications, virtual reality, automated driving, and the Internet Things, 5G represents breakthrough in design communication networks. Nevertheless, considering increasing requests for new services predicting development technologies within decade, it is already possible envision need move beyond architecture incorporating innovative satisfy needs at both individual societal levels.

10.1109/mvt.2019.2921162 article EN IEEE Vehicular Technology Magazine 2019-08-08

The exponential increase of mobile data traffic requires disrupting approaches for the realization future 5G systems. In this article, we overview technologies that will pave way a novel cellular architecture integrates high-data-rate access and backhaul networks based on millimeter-wave frequencies (57-66, 71-76, 81-86 GHz). We evaluate feasibility short- medium-distance links at these analyze requirements from transceiver technology, antennas, modulation scheme points view. Technical...

10.1109/mcom.2014.6894457 article EN IEEE Communications Magazine 2014-09-01

The media environment has changed dramatically in the last few years. Audience fragmentation and online advertising atomisation have transformed existing business models put into question traditional management practices. Now more than ever, policy makers editors are concerned about future of newspapers. In this changing scenario, there new that attempt to promote preserve public interest journalism. Among them, non-profit institutions community-funded platforms most innovative relevant...

10.1080/17512786.2012.667267 article EN Journalism Practice 2012-03-30

Consumer electronic equipments are becoming small, portable devices that provide users with a wide range of functionality, from communication to music playing. The battery technology and the power consumption device limit size, weight autonomous lifetime. One promising alternative batteries (and fuel cells, must be refueled as well) is use parasitic energy dissipated in movement wearer it. We analyze this work current state-of-the-art future prospect conversion mechanical human environment...

10.5188/ijsmer.10.34 article EN International Journal of the Society of Materials Engineering for Resources 2002-01-01

The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to Dirac point. With respect previous work, our approach extends modeling accuracy low-voltage biasing regime and improves prediction current saturation. These advantages are highlighted a comparison study drain current, transconductance, output conductance,...

10.1109/tnano.2014.2328782 article EN IEEE Transactions on Nanotechnology 2014-06-04

We present novel three-layer D-band linearly polarized transmitarrays entirely fabricated using standard printed circuit board (PCB) processes. Three flat lenses comprising 1600 elements are designed to generate broadside and scanned beams. All synthesized eight unit cells (3 bit phase quantization). The combination of probe-fed aperture-coupled patches is proposed overcome the design challenges due technological constraints achieve a wideband operation. minimum feature 80 μm. tradeoffs in...

10.1109/tap.2019.2938630 article EN IEEE Transactions on Antennas and Propagation 2019-09-06

Two phenoxyacid herbicides (2,4-D and MCPA) their six corresponding phenols were determined in soil by using gas chomatography with electron impact mass spectrometry (GC/MS) for confirmation/quantitation. An automatic extraction (leaching), preconcentration, cleanup (sorption) module was developed to extract the eight compounds from soil. The average recovery of all species, spiked at μg/kg-mg/kg levels, 95% (average standard deviation ± 5%). A plot agricultural clayey (∼12 m2) contaminated...

10.1021/es0107226 article EN Environmental Science & Technology 2001-10-02

This paper presents an original mmW frequency multiplier that provides the channel center frequencies of IEEE 802.15.3c standard from a much lower and fixed 2.16 GHz. It is composed voltage-controlled oscillator (VCO) whose supply periodically switched on-and-off by input signal, providing Periodically Repeated Oscillations Train (PROT). multi-harmonic signal injected into (ILO) locks onto harmonic interest, continuous wave sinusoidal in 60 GHz band. The CMOS 40 nm circuit consumes 32 mW...

10.1109/jssc.2015.2411623 article EN IEEE Journal of Solid-State Circuits 2015-04-03

Optical interconnects for system-in-package applications can be designed various bit rates. In this paper, an optimization study is conducted to find the optimal parameters electrooptical links, based on a silicon photonic technology. We focus rate achieve highest possible power efficiencies. This paper takes all elements of link into account: serialization stage, ring-resonator-based modulator, thermal stabilization, modulator driver, laser, receiver, deserialization and clock-phase...

10.1109/tvlsi.2016.2553673 article EN IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2016-04-29

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated order to maintain acceptable performance across all corners throughout temperature range. This paper proposes a new technique consisting compensation circuit that adapts generates appropriate bias...

10.1109/tcsi.2009.2031707 article EN IEEE Transactions on Circuits and Systems I Regular Papers 2009-12-21

In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of figure and 16 gain with 3-dB bandwidth 31.5 GHz (125.5-157 GHz). composed four stages capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high large bandwidth. consumes 75 mW from 1-V voltage supply, occupies compact active area 0.07 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/ims30576.2020.9224114 article EN 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 2020-08-01

A compact analytical model of short-channel AlGaN/GaN HEMTs in the presence a current collapse is presented. The based on an experimentally established trapping mechanism at gate edges and relies significant differences between characteristic carrier capture-escape times typical RF signal periods. For first time, we implement theory describing electric field distributions HEMT gate-to-drain spacing region, with without trapped charge distributions. By consequently accounting for velocity...

10.1109/ted.2007.915092 article EN IEEE Transactions on Electron Devices 2008-02-29

A voltage-controlled oscillator (VCO) with a central frequency of 56 GHz and 17% tuning range is presented. The oscillation tuned both by an analog input 3-bit digital control bus using the same type differential varactors. It achieves record figure merit, considering 186.8 dBc/Hz able to address full wireless high-definition multimedia interface band . VCO implemented in 65-nm bulk CMOS process dissipates 15 mW from 1.2-V supply. Both fixed parameterized electromagnetic models for...

10.1109/tmtt.2010.2042853 article EN IEEE Transactions on Microwave Theory and Techniques 2010-03-26

This paper presents an improved modeling of the effect random mismatch and current source transient switching behavior on performance current-steering CMOS digital-to-analog converters (DACs). The work considers two cell topologies, namely a simple cascoded cell, obtaining relation transistors design parameters to static dynamic models. On one hand, mismatching statistical analysis is applied all circuit, which allows define expressions relating circuit DAC specifications without need...

10.1109/tcsi.2003.821287 article EN IEEE Transactions on Circuits and Systems I Regular Papers 2004-01-01

Two popular approaches to building digital twins are pure data-based and physics/simulation-based methods. In this article, we present a framework for hybrid that combines the strengths of two approaches, sharing results demonstrating applicability flow network.

10.1109/ms.2021.3134042 article EN IEEE Software 2021-12-10

On-chip noise generation and coupling is an important issue in deep-submicron technologies. Advanced IC technology faces new challenges to ensure function performance integrity. Selecting adequate test techniques depends on the circuit, its implementation, possible physical failures parasitic models. This demand for practices precipitated investigation of dl/dt dV/dt propagation mechanisms.

10.1109/mdt.2002.1033789 article EN IEEE Design & Test of Computers 2002-09-01
Coming Soon ...