A5075350549- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Microwave Engineering and Waveguides
- Analytical Chemistry and Sensors
- VLSI and Analog Circuit Testing
- Advanced Sensor Technologies Research
- Advanced Power Amplifier Design
- Laser Design and Applications
- Advancements in PLL and VCO Technologies
- Low-power high-performance VLSI design
- Ultra-Wideband Communications Technology
- Radiation Effects in Electronics
- Molecular Junctions and Nanostructures
- Electrochemical Analysis and Applications
- Semiconductor Quantum Structures and Devices
- Superconducting and THz Device Technology
- Electrochemical sensors and biosensors
- Analog and Mixed-Signal Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- 3D IC and TSV technologies
- Sensor Technology and Measurement Systems
- Fuel Cells and Related Materials
- Electronic Packaging and Soldering Technologies
MPS España
2023
IMEC
2023
Broadcom (Spain)
2014-2015
Universitat Politècnica de Catalunya
2008-2014
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated order to maintain acceptable performance across all corners throughout temperature range. This paper proposes a new technique consisting compensation circuit that adapts generates appropriate bias...
This letter proposes a new sensor circuit to measure on-chip low-frequency temperature changes that have information about electrical high-frequency figures of merit radio frequency (RF) circuit. The proposed uses metal-oxide-semiconductor field-effect transistor (MOSFET) as sensing device, which is then connected band-pass filter amplifies the signal generated by RF under test (CUT). Simulations in 65 nm CMOS technology show such can extract center (2.47 GHz) power amplifier (PA) measuring at 1 kHz.
This letter introduces a novel on-chip measurement technique for the determination of central frequency and 3 dB bandwidth 60 GHz power amplifier (PA) by performing low temperature measurements. The sensor is embedded in same silicon die as PA, placed empty spaces next to it. Results confirm that sensors can be used functional built-in testers which serve reduce testing costs enhance yield part self-healing strategies.
Bioreactors are employed in many industries like food, beverage, chemical, and biopharmaceutical to grow biologically active compounds. range size from large industrial tanks for manufacturing small single-use vessels process flow development or research purposes vaccine discovery. To ensure optimal bioreactor operation, there is a need monitor various parameters, including temperature, acidity, oxidation-reduction potential (ORP), dissolved oxygen, ion concentrations, other metabolites...
In this paper an electro-thermal co-simulation methodology suitable for RF circuits is presented. It circumvents traditional transient simulation drawbacks that arise when signals or magnitudes whose frequencies are separated orders of magnitude present simultaneously in the simulated circuit. The accuracy proposed technique verified experimentally by comparing and measurements thermal coupling between integrated power amplifier (PA) a differential temperature sensor embedded same silicon...
In this paper we demonstrate that the steady state temperature increase due to power dissipated by circuit under test can be used as observable gain of a 2GHz linear class A Power Amplifier. As proof concept, use two strategies monitor temperature: sensor embedded within same silicon die, which for BIST approach, and an Infra Red camera, with applications failure analysis product debugging.
This letter shows how a temperature sensor and simple dc voltage multimeter can be used as instruments to determine the central frequency 3 dB bandwidth of 60 GHz linear power amplifier (PA). Compared previous works, monitoring now proposed requires much simpler convenient measurement set-up. In this example, is embedded in same silicon die PA. Being placed empty layout spaces next it, it built-in test circuit.
In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18 μm CMOS is presented. It consumes 42 mW operating at 560 Mbps datarate. The receiver and transmitter share most of the components reducing area. This design optimal for low-power low-cost short-range high-speed communications.
A recharging cycles characterization of a floating Gate PMOS radiation sensor is presented. The with an extra circuitry to emulate the environment in order discharge gate has been tested using automated measurement system. performance and reliability analyzed after those tests.
The use of CMOS short-channel effects for yield enhancement in analogue design is presented. Analytical and simulation results show the effectiveness this technique applied on a 2.4 GHz LNA designed 65nm technology. trade-off between power consumption discussed low current-reuse alternative
This research paper introduces a novel integrated circuit (IC) designed for bioreactor applications catering to multichannel electrochemical sensing. The proposed IC comprises 2x potentiometric, potentiostat, ISFET channels and 1x temperature channel. potentiostat channel utilizes current conveyor-based architecture with programmable mirroring ratio, enabling an extensive measurement range of 114 dB. potentiometric incorporates customized electrostatic discharge (ESD) protection achieve...
This paper presents a low power and cost front end for direct conversion 2.5 GHz ISM band receiver composed of 16 kV HBM ESD protected LNA, differential Gilbert-cell mixers, high-pass filters DC offset cancellation. The whole front-end is implemented in 2P6M 0.18 μm RFCMOS process. It exhibits voltage gain 24dB SSB noise figure 8.4dB which make it suitable most the wireless short-range communication transceivers. achieved consumption only 1.06mW from 1.2V supply.
This paper reports on the design solutions and different measurements we have done in order to characterize thermal coupling performance of differential temperature sensors embedded an integrated circuit implemented a 65 nm CMOS technology. The on-chip increases been generated using diode-connected MOS transistors behaving as heat sources. Temperature performed with sensor are corroborated infra-red camera laser interferometer used thermometer. A 2 GHz linear power amplifier (PA) is well...
In the present paper we analyze that DC temperature measurements of silicon surface can be used to monitor high frequency status and performances class A RF Power Amplifiers. As a proof concept, experimental results obtained with 65 nm CMOS IC contains 2 GHz linear Amplifier very simple differential sensor. Results show PA output power tracked from measurements.
Abstract This work presents the design procedure followed to obtain a low‐power voltage‐controlled oscillator (VCO) robust against high‐frequency substrate noise, using as demonstrator 2.5 GHz VCO with quadrature outputs (QVCO) based on 5‐GHz LC tank resonant (LC‐VCO) and frequency divider. A simple, intuitive, easy handle analytical model is proposed identify parameters that contribute performance degradation of LC‐VCOs due effect high noise. The guidelines obtained have been applied in...
This paper presents an overview of the work done so far related to use temperature sensors as performance monitors for RF and MMW circuits with goal implement built-in testing or self-calibration techniques. The strategy is embed small on same silicon die circuit under test, taking advantage empty spaces in layout. reviews physical principles, examples that reveal how can be used functional testers serving reduce costs enhance yield part self-healing strategies.
A large amount of materials processing is done using an industrial CO2 laser operating in the mid-infrared (IR) spectrum. Their high efficiency and tremendous power output have made them one most commonly known transition wavelength at 10,6 microns facilitates cutting, drilling marking a wide variety electronics medical industries. Because lasers are feedback systems, many their design parameters strongly interact with another, arriving optimum requires really thorough understanding just how...