We have studied the electrocaloric response of archetypal antiferroelectric PbZrO3 as a function voltage and temperature in vicinity its antiferroelectric-paraelectric phase transition. Large effects opposite signs, ranging from an electro-cooling -3.5 K to electro-heating +5.5 K, were directly measured with infrared camera. show by calorimetric electromechanical measurements that large negative effect comes endothermic antiferroelectric-ferroelectric switching, contrast dipole...

This paper reports on the fabrication technology and packaging strategy for 300-V 5-A silicon carbide Schottky diodes with a wide temperature operation range capability (between -170 °C 300 °C). These have been designed harsh environment space applications such as inner Solar System exploration probes. Different endurance tests performed to evaluate diode behavior when working at high under severe thermal cycling conditions (ranged from 270 The radiation hardness has also tested. It found...

Currently, the demand by new application scenarios of increasing operating device temperatures in power systems is requiring die-attach materials with higher melting points and suitable thermomechanical properties. This makes material selection, die-attaching process, evaluation a real challenge nowadays packaging technology. paper presents comparative analysis performance high-temperature (sintered nano-Ag, AuGe, PbSnAg) under harsh thermal cycling tests. study carried out using test...

This paper studies by experimentation and physics-based simulation the Short-Circuit (SC) capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs): cascodes, p-GaN, GaN Metal-Insulator-Semiconductor HEMTs (MISHEMTs). As a result, cascodes present worst SC ruggedness. By contrast, p-GaN gate MISHEMTs provide higher thanks to their strong drain current reduction. In addition, valuable state-of-the-art about all commercially available...

This paper is an important step toward the development of complex integrated circuit (IC) control electronics that have to attend high-temperature environment power applications. We present in premiere a prototype set essential mixed-signal ICs on SiC capable controlling switches and lateral MESFET able operate at high temperatures, all embedded same chip. Also, we report for first time functionality standard Si-CMOS topologies master-slave data flip-flop (FF) data-reset FF digital building...

Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs studied under Short-Circuit (SC) by experiment physics-based simulations (drift-diffusion thermodynamic models). A strong drain current reduction (>70% after saturation peak) leakage (tens mA) observed. All withstand...

This paper analyzes the impact of a nonuniform temperature distribution inside insulated-gate bipolar transistor (IGBT) power modules on reliability railway inverters. The interaction between chosen cooling system (a heat-pipe-based one) and module is considered in detail. After showing experimental setup thermal conditions, mapping carried out. Then, effects cycles constitutive elements IGBT are pointed out when considering real mission profile. Finally, results from linked to problems...

This work analyzes, discusses, and proposes a solution to the problem of emissivity correction present in infrared thermography when coatings with known cannot be deposited on inspected surface. It is shown that conventional technique based two reference thermal images linearization blackbody radiation dependence temperature not reliable accurate compared coating procedure. In this scenario, new approach direct processing output signal camera (which proportional detected irradiance) proposed...

This paper studies the overload turnoff failure in insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted inducing current and temperature mismatch two IGBT cells. Results show that mismatches properties during transient operation can lead to uneven dissipation,...

Lateral n-channel enhancement-mode GaN metal-oxide-semiconductor (MOS) field-effect transistors and lateral capacitors have been fabricated on a p-type epi-GaN substrate semiconductor electrically characterized at different temperatures. A clear positive behavior of the inversion channel mobility with temperature has obtained. physics-based model charge trapped in interface states characteristics used to investigate dependence MOS mobility. The increase is due an reduction for given voltage...

Abstract BACKGROUND Predator–prey interactions are major drivers of species coevolution. Insectivorous bats emit ultrasonic pulses to orientate themselves and pursue prey in flight. Several nocturnal lepidopterans have developed auditory organs that allow them detect echolocating change their normal behaviour reduce predation risk, a phenomenon included within the ‘landscape fear’ concept. In this study, we assessed whether bat ultrasounds affect egg production tympanate moth Chilo...

The clamped inductive turnoff failure of nonpunchthrough insulated-gate bipolar transistors (IGBTs) is investigated under overcurrent and overtemperature events. First, their electrical physical signatures are experimentally determined. Second, TCAD simulations carried out considering the current mismatch among cells from chip core, gate runner, edge termination areas. As a result, secondary breakdown IGBT periphery at runner has been identified to be responsible for failure.

In this paper, a set-up based on the internal IR-laser deflection technique is described. This allows measurement of temperature gradient and free-carrier concentration inside power semiconductor devices with high spatial (35 µm) time (less than 1 µs) resolution. The consists in absorption an beam passing through biased device. After describing operational principle experimental set-up, postprocessing methodology followed to extract detailed. order show functionality, drift region 600 V...

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> 4H-SiC Junction Barrier Schottky (JBS) diodes (1.2 and 3.5 kV) have been processed using the same technology with two different layouts. From 4 A for whole temperature range, 3.5-kV exhibit a bipolar conduction independent of layout. However, behavior 1.2-kV depends on design. At 500 V–300 <formula formulatype="inline"> <tex>$^{\circ}\hbox{C}$</tex></formula>, leakage current is only 100 nA 10...

A comparative study of the electrical characteristics 3.3 kV SiC Schottky barrier (SBD), junction bipolar (JBS) and PiN diodes is presented. class 4H-SiC SBD, JBS have been fabricated with an analogous technology process on similar epi wafers. Diodes characterized in forward, reverse switching mode 25 °C–300 °C temperature range. The optimum performance depends adequate use unipolar or advantages established by final application specifications. In this respect, a recovery charge versus...

This paper reports on the life tests of silicon carbide Schottky diodes with high-temperature operation capability (up to 270degC). These 300-V-3-A have been designed meet BepiColombo requirements, a European Space Agency mission Mercury. The test consisted in dc current stress 5 A applied these at 270degC for 600 h or more. Different diode technologies tested and compared. On typical Ti Ni thick aluminum metal layer, reliability revealed degradation both interface top surface due diffusion....

This paper focuses on providing an improved and efficient alternative to electromechanical relays (EMRs) in view of the growing demand characteristics for effective power multiplexing induction heating applications. A major analytical approach design implementation bidirectional switches (BDSs) based different semiconductor technologies is presented, including thorough static dynamic characterizations. Emerging gallium nitride high-electron-mobility transistors (GaN HEMTs) silicon carbide...

This paper studies the thermal influence of a light-emitting diode (LED) driver on retrofit LED lamp, also reporting procedure for its characterization and multiscale modeling. In this analysis, temperature is measured by infrared thermography monitoring specific locations with thermocouples. Experimental results point out that increases considerably in all lamp parts when installed (up to 15% board). The simulation approach set parameters (thermal conductivity, emissivity, board resistance)...

A test bench is proposed to study, at die-level, the power losses and current distribution in devices. It based on an infrared camera a flexible half-bridge resonant inverter with tunable resonance frequency f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">res</sub> . With this setup, die surface temperature acquired steady state, while device under real operation. The are derived from mean value averaged, first, over few switching cycles and,...

The authors present a PWM ASIC that is part of general driving-and-control board an induction machine. Like the other ASICs, has to perform efficiently specific-and thus simple-job. It full digital design. So solution presented easily implemented inside ASIC. Some results show good performance obtained with this low-cost and easy-design IC.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>