A5025923506- Photonic and Optical Devices
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Advanced Fiber Optic Sensors
- Mechanical and Optical Resonators
- Optical Network Technologies
- Optical Coatings and Gratings
- Silicon Nanostructures and Photoluminescence
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
- Advanced MEMS and NEMS Technologies
- Semiconductor materials and devices
- Metamaterials and Metasurfaces Applications
- Fern and Epiphyte Biology
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Photorefractive and Nonlinear Optics
- Quantum Information and Cryptography
- Neural Networks and Reservoir Computing
- Advancements in Semiconductor Devices and Circuit Design
- Magneto-Optical Properties and Applications
- Integrated Circuits and Semiconductor Failure Analysis
Université Paris-Saclay
2016-2025
Centre de Nanosciences et de Nanotechnologies
2016-2025
Centre National de la Recherche Scientifique
2016-2025
National Research Council Canada
2024
Université Paris-Sud
2014-2023
Inria Saclay - Île de France
2021
Direction de la Recherche Fondamentale
2004-2020
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
1998-2020
CEA LETI
2017-2020
CEA Grenoble
2017-2020
Silicon photonics research can be dated back to the 1980s. However, previous decade has witnessed an explosive growth in field. is a disruptive technology that poised revolutionize number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon ability use CMOS-like fabrication resulting high-volume production at low cost. This enabling factor bringing range areas where costs implementation using traditional photonic...
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length reduced down to 15 microm using butt coupling configuration which sufficient totally absorb light at the wavelength of 1.55 microm. -3 dB bandwidth 42 GHz has been measured a 4V reverse bias with responsivity as high 1 A/W and low dark current density 60 mA/cm(2). At 1.52 microm, obtained under -0.5 V bias. process fully compatible CMOS technology.
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge using three kinds experimental set-ups. In addition, a responsivity 0.8 A/W 1550 nm measured. An open eye diagrams 40Gb/s were demonstrated under zero-bias wavelength 1.55 µm.
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with responsivity as high 1 A/W. technological processes are compatible complementary-metal-oxide-semiconductor (CMOS) technology.
Abstract Efficient and reliable on-chip optical amplifiers light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production for CMOS-compatible devices are still lacking. Here, we report ultra-high gain in erbium-based hybrid slot waveguides a monolithic, scalable atomic-layer deposition process....
come from teaching and research institutions in France or abroad, public private centers.L'archive ouverte pluridisciplinaire
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices based on the carrier depletion effect in a pipin diode to generate good compromise between high efficiency, speed and low loss. is embedded Mach-Zehnder interferometer, self-aligned fabrication process was used obtain precise localization of active p-doped region middle waveguide. Using 4.7 mm (resp. 0.95 mm) long phase shifter, modulator exhibits an extinction ratio 6.6 dB 3.2 dB), simultaneously with loss 6 4.5 dB)...
Germanium photodetectors are considered to be mature components in the silicon photonics device library.They critical for applications sensing, communications, or optical interconnects.In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions.This configuration takes advantage compatibility with contact process steps modulators,...
Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for first time, best our knowledge, realization an ultra-directional L-shaped grating...
Abstract Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, propelled many advances in optoelectronics, information and communication technologies, sensing energy, to name a few. Silicon aims deliver compact high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, indirect bandgap,...
Silicon-on-insulator (SOI) optical waveguides with high electromagnetic field confinement suffer from sidewall roughness which is responsible for strong scattering effects. This letter reports a numerical investigation on the size influence of ultrasmall SOI propagation loss due to roughness. It shown that smaller than 260 /spl times/ nm roughness-induced decreases. As mode reduced, very low light coupling and single-mode fiber can be achieved as 0.5 dB/cm 150 cross-sectional waveguide.
A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region lateral pin diode. This design allows good overlap between mode density variations. Insertion 5 dB measured with contrast ratio 14 for 3 bandwidth 10 GHz.
The evolution of silicon optical modulators is recalled, from the first effect demonstrations to characterization high-performance devices integrated in waveguides. Among possibilities achieve modulation silicon-based materials, carrier depletion has demonstrated good capacities. Carrier Si and SiGe/Si structures been theoretically experimentally investigated. Large phase efficiency, low loss, large cutoff frequency are obtained by considering simultaneously electrical structure...
We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the shows large spectral brightness of 400 pairs photons /s/MHz for 500 μW pump power, compatible with standard telecom dense wavelength division multiplexers. demonstrate high-purity entanglement, i.e., free photonic noise, near perfect raw visibilities (> 98%) between various channel C-band. Such compact stands as...
published or not.The documents may come from teaching and research institutions in France abroad, public private centers.L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de scientifiques niveau recherche, publiés ou non, émanant des établissements d'enseignement recherche français étrangers, laboratoires publics privés.25 Gbps low-voltage hetero-structured silicongermanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width 1μm . Corner mirrors that allow compact 90° turns between two perpendicular waveguides characterized. Measured propagation losses ~0.4 dB/cm ~0.5 for 380-nm 200-nm film, respectively, mirror ~1 dB This allows the development applications such as optical interconnects in integrated circuits over distances larger than several centimeters.
An experimental characterization of the grating couplers for sub-micrometer silicon-on-insulator (SOI) waveguides is presented. The have been designed, realized, and characterized +1 diffraction order at an operating wavelength 1.31 /spl mu/m TE polarization. At resonant angle, a coupling efficiency higher than 55% has measured. angular range tolerance evaluated to 3/spl deg/ 20 nm, respectively. coupler followed by taper, about 50% input power coupled into rib strip SOI waveguides. ration...
Silicon-on-insulator (SOI) optical waveguides insure high electromagnetic field confinement but suffer both from sidewall roughness responsible of scattering effects and leakage toward the silicon substrate. These two mechanisms are main sources loss in such waveguides. Considering case single-mode ultrasmall square SOI waveguides, propagation is calculated at telecommunication wavelengths taking into account these contributions. Leakage substrate strongly depend on waveguide size as well...
High efficiency surface grating couplers for silicon nitride waveguides have been designed, fabricated, and characterized.Coupling efficiencies exceeding 60 % are reported at a wavelength of 1.31 µm, as well angular -3 dB tolerances 4° 50 nm, respectively.When the is increased from 1310 nm to 1450 coupling progressively decreases but remains above 20 nm.The influence duty ratio has also investigated: maximum was obtained ratio.
We demonstrate a novel type of slow light photonic crystal waveguide which can produce unusual "U" group index - frequency curves with constant n(g) over large bandwidth. By shifting the boundaries this waveguide, flexible control (10 <n(g)< 210) bandwidth (1nm<Deltalambda<43nm centered at 1550nm) and normalized Delay-Bandwidth Product (0.1363<DBP<0.3143) are achieved. Additionally, depending on chosen geometry, extremely low velocity dispersion (GVD<0.5 ps x nm(-1) mm(-1)), controllable...
We report new results about the improvement of delay-bandwidth product in photonic crystal slow light waveguides. Previous studies have obtained large at price small average group index. It is pointed out here that radius and distance between two boundary rows holes a key contribution for product. show possibility improving this factor merit meanwhile maintaining same succeed normal from 0.15 to 0.35, keeping time index unchanged high value 90. This optimization approach may be applicable...
We present the realization of an optical sensor based on infiltrated high-Q slot photonic crystal cavity in a nonfreestanding membrane configuration. Successive infiltrations by liquids with refractive indices ranging from 1.345 to 1.545 yield sensitivity S 235 nm/RIU (refractive index unit), while Q-factor is comprised between 8000 and 25,000, giving figure merit up 3700. This has detection limit 1.25×10⁻⁵. The operation this device silicon-on-insulator (SOI) substrate allows...
We experimentally investigate refractive index sensing in silicon slot waveguide ring resonators by the detection of giant shift transmission spectrum envelope enabled following specific conditions: cross section as well couplers have been designed to lead a V-shaped microring resonator modulated classical frequency comb and exhibiting quality factor peaks 2000-6000 around λ=1.5 μm. By tracking wavelength shift, sensitivity up S=1,300 nm per refraction unit (RIU) is reported when slots are...
This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications. 200 mm wafers and production tools were used to fabricate the devices. Yields over 97% obtained three different compact (10×10 μm intrinsic region width of 0.5, 0.7, 1 μm) within same batch wafers. Those exhibit low dark currents under reverse bias with median values 74, 62, 61 nA widths 1 μm, respectively, a full wafer. Responsivities up 0.78 A/W at 1550 nm zero...