A5046894994- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Photonic Crystals and Applications
- Semiconductor materials and devices
- Advanced Fiber Laser Technologies
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Advanced Fiber Optic Sensors
- Advanced Optical Sensing Technologies
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Advanced Power Amplifier Design
- Optical Coherence Tomography Applications
- Neural Networks and Reservoir Computing
- Optical Coatings and Gratings
- 3D IC and TSV technologies
- Advanced Surface Polishing Techniques
- Thin-Film Transistor Technologies
- Electronic Packaging and Soldering Technologies
Université Grenoble Alpes
2016-2025
CEA LETI
2016-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2024
CEA Grenoble
2016-2024
Institut polytechnique de Grenoble
1998-2023
STMicroelectronics (India)
2004-2020
Laboratoire d'Optique Appliquée
2019
Centre National de la Recherche Scientifique
1996-2016
STMicroelectronics (France)
2004-2015
STMicroelectronics (Switzerland)
2005-2006
Offering open-access silicon photonics-based technologies has played a pivotal role in unleashing this technology from research laboratories to industry. Fabless enterprises rely on the of these for their product development. In last decade, diverse set with medium and high readiness levels have emerged. This paper provides review nitride photonic IC offered by pilot lines European institutes companies. The also highlights upcoming features platforms discusses how they address long-term market needs.
In this work, we present two-dimensional beam steering in the near-infrared using a SiN integrated circuit, containing optical phased arrays. Beam was achieved over range of 17.6° × 3°, at fixed wavelength 905 nm. The first dimension steered via phase differences between array channels. second accessed by actively switching various sub-devices output diffraction gratings with different periods. characterisation performed on wafer-level test station.
Silicon photonics is one of the most prominent technology platforms for integrated and can support a wide variety applications. As we move towards mature industrial core technology, present integration silicon nitride (SiN) material to extend capabilities our platform. Depending on application being targeted, have developed several strategies incorporation SiN. We these processes, as well key components dedicated In particular, use SiN athermal multiplexing in optical transceivers datacom...
Germanium photodetectors are considered to be mature components in the silicon photonics device library.They critical for applications sensing, communications, or optical interconnects.In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions.This configuration takes advantage compatibility with contact process steps modulators,...
Abstract Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, propelled many advances in optoelectronics, information and communication technologies, sensing energy, to name a few. Silicon aims deliver compact high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, indirect bandgap,...
published or not.The documents may come from teaching and research institutions in France abroad, public private centers.L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de scientifiques niveau recherche, publiés ou non, émanant des établissements d'enseignement recherche français étrangers, laboratoires publics privés.25 Gbps low-voltage hetero-structured silicongermanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
In this paper, we present the hybrid III-V/Si photonic platform developed in CEA-LETI. The overall integration is done a fully CMOS compatible 200-mm technology, scalable to 300-mm wafers, leveraging large-scale capabilities of silicon photonics. III-V material integrated on top mature front-end wafer through direct molecular bonding enabling monolithic light sources. DFB and distributed Bragg reflector (DBR) laser reference designs are used as test vehicles for process validation. A modular...
The availability of low-loss optical interfaces to couple light between standard fibers and high-index-contrast silicon waveguides is essential for the development chip-integrated nanophotonics.Input output couplers based on diffraction gratings are attractive coupling solutions.Advanced grating coupler designs, with Bragg or metal mirror underneath, low-and high-index overlays, multi-level multi-layer layouts, have proven less useful due customized complex fabrication, however.In this work,...
Photodetectors are cornerstone components in integrated optical circuits and essential for applications underlying modern science engineering. Structures harnessing conventional crystalline materials typically at the heart of such devices. In particular, group-IV semiconductors as silicon germanium open up more possibilities high-performing on-chip photodetection thanks to their favorable electrical properties near-infrared wavelengths processing compatibility with chip manufacturing....
Optical interconnects are promising alternatives to copper-based wirings in on-chip communications. Recent advances integrated group-IV nanophotonics should address a range of challenges related with speed, energy consumption, and cost. Monolithically germanium pin photodetectors on silicon-on-insulator (SOI) waveguides indispensable devices this buoyant research field. Here, we comprehensively investigate the opto-electrical properties hetero-structured photodetectors. All were fabricated...
Fast, low-noise and sensitive avalanche photo-receivers are needed for surging short-reach photonic applications. Limitations concerning bandwidth, throughput energy consumption should be overcome. In this work, we comprehensively study the performance opportunities provided by p-i-n photodetectors with lateral silicon-germanium-silicon heterojunctions. Our aim is to circumvent need chip-bonded electronic amplifiers. particular, demonstrate that based on heterostructures yield reliable...
We experimentally demonstrate beam steering in an optical phased array (OPA) featuring a mixture of individual and cascaded phase modulator architecture embedded the binary splitter tree. show equivalent forming 16 channel OPA with separate applied voltages 16ch 6 control voltages. A 32ch 10 is also demonstrated. These results illustrate flexible means designing significantly fewer electrical connections than count, while minimizing impact waveguide errors on output quality.
The optimization of the small and large signal performances a radio frequency (RF)-LDMOS is presented via achievement novel LDMOS architecture. Specific process steps are introduced into 0.25-mum BiCMOS technology precisely described to realize fully salicided gate RF-LDMOS Significant improvement obtained on small-signal - f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> F xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> power...
We demonstrate high-bandwidth O-band Mach-Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 V⋅cm and a 3 dB bandwidth up to 30 GHz was observed for modulator length 250 μm at 0 V bias. Open eye patterns were 25 Gb/s.
A silicon photonics platform that uses a CMOS foundry line is described. Fabrication process following modular integration scheme which leads to flexible platform, allowing different device combinations. complete library demonstrated for 1310 nm applications with state of the art performances. PDK includes specific photonic features and compatible commercial EDA tools has been developed an MPW shuttle service. Finally evolutions such as offer extension 1550 or new modules introduction are presented.
We report ultra-low propagation losses in silicon sub-micrometric waveguides on a 200 mm CMOS compatible photonics platform. show median C-band (O-band) as low 0.1 dB/cm and 0.7 (0.14 1.1 dB/cm) monomode rib strip waveguides, respectively, thanks to H2 smoothing annealing. In addition the significant loss reduction, we that performance characteristic of main passive active components platform are preserved or even improved by process.
We present the wafer-level characterization of a 256-channel optical phased array operating at 1550 nm, allowing sequential testing different OPA circuits without any packaging steps. Using this, we establish that due to random fabrication variations, nominally identical must be individually calibrated. With this constraint in mind, methods significantly reduce time needed calibrate each circuit. In particular, show for an scale, genetic optimization algorithm is already >3x faster than...
Subwavelength grating (SWG) metamaterials have garnered a great interest for their singular capability to shape the material properties and propagation of light, allowing realization devices with unprecedented performance. However, practical SWG implementations are limited by fabrication constraints, such as minimum feature size, that restrict available design space or compromise compatibility high-volume technologies. Indeed, most successful realizations so far relied on electron-beam...
Silicon photonics on-chip spectrometers are finding important applications in medical diagnostics, pollution monitoring, and astrophysics. Spatial heterodyne Fourier transform (SHFTSs) provide a particularly interesting architecture with powerful passive error correction capability high spectral resolution. Despite having an intrinsically large optical throughput (étendue, also referred to as Jacquinot’s advantage), state-of-the-art silicon SHFTSs have not exploited this advantage yet. Here,...
In this paper, we demonstrate for the first time integration of a III-V/Si hybrid laser on back-side SOI wafer. This allows preserving compatibility with Si-waveguide and CMOS front-side metal interconnects, while leveraging passive active photonic device design.
Various aspects of grating coupler development are presented to illustrate how the performance and yield this key component our silicon photonics platform has improved over recent years. The device design concept, fabrication testing discussed in order give a more general insight into challenges faced increasing maturity level platforms. In particular, we will highlight some areas which tools solutions developed for CMOS electronics industry have proven inapplicable case photonics, requiring...
We discussed the X-rays permanent radiation effects on a variety of passive components developed using silicon photonics platform CEA-Leti. The objective is to assess vulnerability such devices at different total ionizing dose (TID) levels provide an overview main in this class components. In detail, we have irradiated room temperature grating couplers, microring resonators (MRRs), Mach–Zehnder interferometers (MZIs), Echelle de-multiplexers five doses, from 152 Gy(Si) 1.52 MGy(Si) with...