A5061161117- Semiconductor materials and devices
- Radiation Effects in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- Advanced biosensing and bioanalysis techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Biosensors and Analytical Detection
- Radiation Detection and Scintillator Technologies
- Particle Detector Development and Performance
- Analytical Chemistry and Sensors
- Bacteriophages and microbial interactions
- Electrochemical Analysis and Applications
- Advanced Chemical Sensor Technologies
- Silicon Carbide Semiconductor Technologies
- Advanced Sensor and Energy Harvesting Materials
- Radiation Therapy and Dosimetry
- VLSI and Analog Circuit Testing
- Synthesis and Biological Evaluation
- Molecular Junctions and Nanostructures
- Child Nutrition and Water Access
- Semiconductor Lasers and Optical Devices
- Nanowire Synthesis and Applications
- Trypanosoma species research and implications
- Low-power high-performance VLSI design
- Photonic and Optical Devices
- Advanced MEMS and NEMS Technologies
University of Padua
2014-2025
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2018-2025
European Organization for Nuclear Research
2017-2023
Istituto Nazionale di Fisica Nucleare
2018-2021
Vanderbilt University
2019
KU Leuven
2019
IMEC
2019
The degradation induced by ultrahigh total ionizing dose in 65-nm MOS transistors is strongly gate-length dependent. current drive decreases during irradiation, and the threshold voltage often shifts significantly irradiation and/or high-temperature annealing, depending on transistor polarity, applied field, irradiation/annealing temperature. Ionization spacer oxide overlying silicon nitride layers above lightly doped drain extensions leads to charge buildup as well ionization release of...
Abstract This Technical Design Report presents a detailed description of all aspects the LUXE (Laser Und XFEL Experiment), an experiment that will combine high-quality and high-energy electron beam European with high-intensity laser, to explore uncharted terrain strong-field quantum electrodynamics characterised by both high energy intensity, reaching Schwinger field beyond. The further implications for search physics beyond Standard Model are also discussed.
Simplicity is one of the key feature for spread any successful technological product. Here, a method rapid and low-cost fabrication electrochemical biosensors presented. This "plug, print & play" involves inkjet-printing even in an office-like environment, without need highly specialized expertise or equipment, guaranteeing ultra-fast idea to (scaled) prototype production time. The printed can be connected smartphone through its audio input their impedance readout, demonstrating validity...
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs pMOSFETs irradiated up to 1 Grad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) annealed at high temperatures. TID sensitivity depends on the channel length, width, bias condition. Halo implantations improve radiation tolerance of shorter-channel transistors. Worst case for TID-induced degradation is...
In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation pMOSFETs depends not only on channel width but also length. Short-channel exhibit higher TID tolerance compared to long ones. We attributed effect presence halo implantations. For short-channel lengths, drain can overlap source one, increasing average bulk doping along channel. attenuates radiation-induced degradation, improving...
This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) then annealed for 24 h 100 °C. Irradiated devices show significant in transconductance OFF-state leakage currents slight subthreshold stretch-out negligible threshold voltage shifts. At...
In this work, we present a multiphysics modeling approach capable of simulating electrochemical impedance spectroscopy (EIS) responses screen-printed electrodes (SPEs) modified with self-assembled monolayers 11-Mercaptoundecanoic acid (MUA). Commercially available gold SPEs are electrochemically characterized through experimental cyclic voltammetry and EIS measurements 10 mM [Fe(CN)6]3−/4− redox couple in phosphate buffered saline before after the surface immobilization MUA at different...
Total-Ionizing Dose (TID) and Displacement Damage (DD) are investigated in SiC power MOSFETs at ultra-high doses with 10-keV X-ray 3-MeV protons. Significant parametric shifts the electrical responses of devices observed depending on bias condition fabrication technology. Worst TID degradation is measured when positive gate-bias applied during irradiation, due to charge trapping gate oxide. Devices built latest generation technology reveals a smaller subthreshold swing degradation, thanks...
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed high temperature under different bias conditions. The experimental results demonstrate the sensitivity of pMOSFETs to radiation-induced short-channel effects, related buildup defects in spacer dielectrics. We find that charge spacers insensitive applied source-to-drain electric field, but generation and/or annealing interface traps strongly depends on drain channel length. static dc...
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies dominated by ionization mechanisms thick isolation surrounding the transistors. Recent results 65-nm FETs demonstrated that performance degradation ultrahigh total ionizing dose (TID) experiments due defects shallow trench oxide or materials composing lightly doped drain spacers. These insulators are thick,...
Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate-stack. Transistors irradiated up to 500 krad(SiO ) and annealed at high temperatures. Irradiated devices show negative threshold-voltage Vth shifts, subthreshold stretch-out, leakage current increases. These result from positive charge trapping...
Today, many electronic circuits are required to be able work effectively, even in environments exposed ionizing radiation. This examines the effects of radiation on shift registers realized a bulk 16 nm FinFET technology, focusing Single-Event Upset (SEU). An SEU occurs when charged particle ionizes sensitive node circuit, causing stored bit flip from one logical state its opposite. study estimates saturation cross-section for technology and compares it with results 28 planar CMOS...
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced electrostatic control, and suppression of parasitic leakage current paths. nFETs pFETs show similar TID responses, making GAA NW technology an excellent candidate for IC applications in high-radiation environments. The slight degradation threshold voltage suggests limited charge buildup dielectrics. However,...
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA) FET technology using Si nanowire channels with diameter of 8 nm. n- and p-FETs irradiated up to 300 Mrad(SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) annealed at room temperature. TID negligible 10 ). At ultrahigh doses, the degradation depends on irradiation bias condition, more severe observed longer channel devices. The worst case...
This Technical Design Report presents a detailed description of all aspects the LUXE (Laser Und XFEL Experiment), an experiment that will combine high-quality and high-energy electron beam European with high-intensity laser, to explore uncharted terrain strong-field quantum electrodynamics characterised by both high energy intensity, reaching Schwinger field beyond. The further implications for search physics beyond Standard Model are also discussed.
The bovine serum albumin (BSA) protein is employed in genosensors as nonspecific binding blocker. In this work, the influence of BSA on electrochemical response a DNA-based biosensor explored by impedance spectroscopy (EIS) and double pulse voltammetry technique. Each buffer component hybridization studied bare gold electrodes single-stranded DNA (ssDNA)-functionalized electrodes. found to have higher sensor sensitivity. superficial modification induced greatly affects signal due steric...
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) and Si fin field-effect (FinFETs). In these cases, pre-existing defects the ultrathin gate dielectrics dominate device low-frequency 1/f (LFN). contrast, III–V MOS devices lower quality oxide/semiconductor interfaces show significant increases LFN at much...
We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different gate lengths irradiated 10-keV X-rays under biases. The largest degradation after irradiation occurs at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = -1 V. Radiation-induced trapped positive charge dominates TID response FinFET transistors, consistent previous results for multifin capacitors. Shorter gate-length devices show larger...