Wei Xue

ORCID: 0000-0003-0759-4465
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Research Areas
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Photonic Crystals and Applications
  • Semiconductor materials and devices
  • Luminescence Properties of Advanced Materials
  • Quantum Dots Synthesis And Properties
  • Photonic and Optical Devices
  • Optical Coatings and Gratings
  • GaN-based semiconductor devices and materials
  • Chalcogenide Semiconductor Thin Films
  • Advancements in Semiconductor Devices and Circuit Design
  • Copper Interconnects and Reliability
  • Solid-state spectroscopy and crystallography
  • Organic Electronics and Photovoltaics
  • Liquid Crystal Research Advancements
  • Advanced Sensor and Energy Harvesting Materials
  • Radiation Detection and Scintillator Technologies
  • Advanced Fiber Optic Sensors
  • Advanced Optical Imaging Technologies
  • Advanced Fiber Laser Technologies
  • Conducting polymers and applications
  • Perovskite Materials and Applications
  • Advanced Antenna and Metasurface Technologies
  • Terahertz technology and applications
  • Metamaterials and Metasurfaces Applications

Xi'an Jiaotong University
2024

Wenzhou University
2023

Beijing Institute of Technology
2010-2020

Beijing Institute of Optoelectronic Technology
2009-2017

A highly efficient inverted polymer solar cell (PSC) has been successfully demonstrated by using a ZnO nanoparticle (NP) and poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyfluorene)] (PFN) bilayer structure as an effective electron collecting layer. This ZnO/PFN is designed to combine the advantages of both PFN, based on performance comparison ZnO-only, PFN-only, devices in our work. NPs can serve transport buffer layer for reduced series resistance, while PFN...

10.1021/acsami.5b11140 article EN ACS Applied Materials & Interfaces 2016-01-12

The structural, optical, and electrical characteristics of zinc sulfide (ZnS)/Ag/ZnS (ZAZ) multilayer films prepared by ion beam assisted deposition on k9 glass have been investigated as a function Ag layer thickness. ZAZ are significantly improved up insertion optimal thickness between ZnS layers. results show that due to bombardment Ar beam, distinct islands evolve into continuous at thin about 4 nm. thinner film 2 nm leads high sheet resistance low transmittance for the interface...

10.1063/1.3490787 article EN Journal of Applied Physics 2010-10-01

Abstract To improve the performance of inverted polymer solar cells based on a ternary blend polymerthieno [3,4-b] thiophene/benzodithiophene (PTB7), [6,6]-phenyl C 71 -butyric acid methyl ester (PC BM) and indene-C60-bisadduct (ICBA), two-layer structure zinc oxide (ZnO) Al-doped (AZO) nanoperticles is used to electron extraction. Comparing ZnO, AZO has lower work function thus provides larger built-in potential across organic heterojunction, resulting in more efficient photo-current...

10.1038/s41598-017-08613-7 article EN cc-by Scientific Reports 2017-08-21

In this study, indium oxide (In2O3) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness optical properties In2O3 thin-films the electrical characteristics TFTs studied at different annealing temperatures. Thermal higher leads to an increase in saturation mobility...

10.1088/1674-1056/27/4/048504 article EN Chinese Physics B 2018-04-01

In this paper, the effects of N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O plasma treatment (PT) at various temperatures on performances InMgZnO (IMZO) thin-film transistors (TFTs) were investigated. As a result, TFTs with plasma-treated (10 W) IMZO channel layers 100° for 10 min showed five times higher linear field-effect mobility compared to untreated IMZO. The PT did not cause any significant changes crystal structure, surface...

10.1109/ted.2017.2775637 article EN IEEE Transactions on Electron Devices 2017-11-30

Highly improved detectivity of Infrared photodetector by using three-dimensional self-assembly PbSe superlattices.

10.1039/c4tc01106f article EN Journal of Materials Chemistry C 2014-01-01

Degradation and self-recovery of polycrystalline Silicon (poly-Si) Thin film transistor (TFT) by using complementary metal oxide semiconductor (CMOS) inverter were investigated. Under DC stress, degradation mechanisms clarified comparing the Voltage transfer characteristics (VTC) fresh stressed inverters. It is determined that Negative bias temperature instability (NBTI) p-TFT dominates under zero stress. After removing VTC continues to be degraded, because interface trap-states grain...

10.1049/cje.2019.03.004 article EN Chinese Journal of Electronics 2019-07-01

Abstract This study examines the effect of mandatory corporate social responsibility (CSR) disclosure on outward foreign direct investment (OFDI) Chinese listed firms. We address potential endogeneity concerns by employing propensity score matching (PSM) and difference‐in‐differences (DID) methods. Our analysis reveals that firms subject to CSR exhibit a significantly higher engage in OFDI undertake greater number projects. positive is particularly pronounced for specific sub‐samples firms:...

10.1111/twec.13629 article EN World Economy 2024-08-22

Abstract The optoelectronic oscillator (OEO) has been widely investigated to generate ultrapure microwave signals. For many applications, signals with large bandwidth and multiple frequency bands, such as broadband comb (MFC) signals, are also needed. Conventional MFC generated by active mode-locking OEO (AML-OEO) using devices Mach–Zehnder modulators (MZM) delay fibers, which make the system structure more complicated take a long time build up stable oscillation at an mode. In this paper, A...

10.1088/1742-6596/2880/1/012007 article EN Journal of Physics Conference Series 2024-10-01
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