A5101952484- GaN-based semiconductor devices and materials
- Gyrotron and Vacuum Electronics Research
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Semiconductor materials and devices
- Particle accelerators and beam dynamics
- Ionic liquids properties and applications
- ZnO doping and properties
- Nanocomposite Films for Food Packaging
- Magnetic confinement fusion research
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Advanced Thermoelectric Materials and Devices
- Particle Accelerators and Free-Electron Lasers
- Carbon Nanotubes in Composites
- Electrochemical Analysis and Applications
- Acoustic Wave Resonator Technologies
- Surfactants and Colloidal Systems
- Laser-Plasma Interactions and Diagnostics
- Pulsed Power Technology Applications
- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- Analytical chemistry methods development
- Advanced Memory and Neural Computing
Sichuan Agricultural University
2024
Stanford University
2013-2023
South China University of Technology
2021
South China Institute of Collaborative Innovation
2021
Tianjin University of Science and Technology
2021
Nanjing Tech University
2017-2019
Hanyang University
2017
Institute of Semiconductors
2008-2016
Chinese Academy of Sciences
2008-2016
Integrated Systems Solutions (United States)
2014
The Field Effect sensors are broadly used for detecting various target analytes in chemical and biological solutions. We report the conditions under which pH sensitivity of an Ion Sensitive transistor (ISFET) sensor can be significantly enhanced. Our theory simulations show that by using buffer solutions containing counter-ions beyond a specific size, shows higher exceed Nernst limit. validate measuring response extended gate ISFET sensor. consistency reproducibility measurement results have...
Single-wall carbon nanotubes (SWCNTs) have great potential to become the channel material for future high-speed transistor technology. However, as-made nanotube field effect transistors (CNFETs) are p-type in ambient, and a consistent reproducible n-type (CNT) doping technique has yet be realized. In addition, very large scale integration (VLSI) of CNT transistors, it is imperative use solid-state method that can applied on wafer scale. Herein we present novel, VLSI-compatible fabricate...
Here we present an analysis of the mobility-limiting mechanisms a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates surface impurities, roughness, non-polar optical phonons, and acoustic phonons are included. Using Schrodinger/Poisson solver, heavy hole, light split-off bands treated separately. To compare calculations with experimental data, Hall-effect structures were fabricated measured at temperatures ranging from 25 to 700 K, sheet densities 2...
Abstract Progress in wide bandgap, III–V material systems based on gallium nitride (GaN) has enabled the realization of high‐power and high‐frequency electronics. Since highly conductive, 2D electron gas (2DEG) at aluminum (AlGaN)/GaN interface is built‐in polarization fields confined to nanoscale thicknesses, its charge carriers exhibit much higher mobilities compared their doped counterparts. This study shows that such 2DEGs also offer unique ability manipulate electrical transport...
The influence of band bending and polarization on the valence offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, a modification method based modified self-consistent calculation proposed to eliminate thus increasing precision XPS. Considering spontaneous at surfaces interfaces different positions Fermi levels surfaces, we compare energy structures Al/Ga-polar AlN/GaN N-polar GaN/AlN heterojunctions, give corrections XPS-measured offsets. Other heterojunctions...
The theoretical electron mobility limited by dislocation scattering of a two-dimensional gas confined near the interface AlxGa1−xN∕GaN heterostructures was calculated. Based on model treating as charged line, an exponentially varied potential adopted to calculate mobility. estimated suggests that such choice can simplify calculation without introducing significant deviation from experimental data, and we obtained good fitting between calculated results. It found measured is dominated...
Forget inventory control in big-box stores---what if we had RFID chips to monitor $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}d\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}v\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}d\phantom{\rule{0}{0ex}}u\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}l$ $c\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}s$ a living body? A team of researchers has started us on this road, by creating radio-frequency...
In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on uniformity two-dimensional electron gas (2DEG) properties AlGaN/GaN high mobility transistor (HEMT) grown by metal-organic chemical vapor deposition (MOCVD) 4-inch Si substrate. High 2DEG (standard deviation down to 0.72%) across radius wafer has been achieved, up 1740.3 cm2/V⋅s at room temperature realized low C O concentrations due reduced ionized scattering. The is...
Abstract We have used two models based on the valence force field and regular solution model to study immiscibility of InAlN ternary alloy got spinodal binodal curves InAlN. Analyzing decomposition curves, we obtain appropriate concentration region for epitaxial growth InN-AlN pseudobinary alloy. At a temperature most common (1000 K), solubility InN is about 10%. Then introduce mismatch strain item into Gibbs free energy effect different substrates taken consideration. Considering Si, Al 2 O...
In this work, we developed a simple method to fabricate 12 × 4 mm2 large scale nanostructure arrays and investigated the feasibility of indium nanodot (ND) array with different diameters periods for refractive index sensing. Absorption resonances at multiple wavelengths from visible near-infrared range were observed various incident angles in variety media. Engineering ND centered square lattice, successfully enhanced sensitivity by 60% improved figure merit (FOM) 190%. The evolution...
In this paper, the electron mobility and sheet density of two-dimensional gas (2DEG) in both air argon environments at 600 °C were measured intermittently over a 5 h duration using unpassivated Al2O3-passivated AlGaN/GaN (with 3 nm GaN cap) van der Pauw test structures. The heterostructures annealed showed smallest decrease (∼8%) 2DEG while samples displayed largest drop (∼70%) based on Hall measurements. Photoluminescence atomic force microscopy that minimal strain relaxation surface...
All-AlGaN based high electron mobility transistors (HEMTs) are promising for increasing the power density in both RF and devices, improving overall efficiency. Nitrogen (N) polar GaN/AlGaN HEMTs offer lower contact resistance compared to its metal-polar counterpart. In this work, we report metal organic chemical vapor deposition (MOCVD)-based growth of N-polar AlGaN channel HEMT structures with a varying Al mole fraction AlxGa1−xN (x = 20%, 30%, 59%, 73%). We confirmed high-quality...
A theory of scattering by charged dislocation lines in a quasitriangle potential well AlxGa1−xN/GaN heterostructures is developed. The dependence mobility on carrier sheet density and obtained. results are compared with those obtained from perfect two-dimensional electron gas the reason for discrepancy given.
The growth conditions of two types indium-based III–V nanowires, InP and InN, are tailored such that instead yielding conventional wire-type morphologies, single-crystal conical structures formed with an enlarged diameter either near the base or tip. By using indium droplets as a catalyst, combined excess supply during growth, "ice cream cone" type nanowire "cone" cream" droplet on top for both InN. Surface polycrystallinity annihilation catalyst tip nanowires observed when is turned off...
Layer‐transferred high quality GaN and GaAs QMAT templates make LED efficiency enhancements for super thin (<2um) ultra‐fine (<5um) microLED structures. Templates have pre‐patterns which minimize sidewall loss, eliminate dry etch damage, intrinsically control street width die size.