C. P. Saini

ORCID: 0000-0003-0912-3739
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Research Areas
  • ZnO doping and properties
  • Copper-based nanomaterials and applications
  • Advanced Memory and Neural Computing
  • Chalcogenide Semiconductor Thin Films
  • Electronic and Structural Properties of Oxides
  • Advanced Photocatalysis Techniques
  • Surface Modification and Superhydrophobicity
  • Fluid Dynamics and Thin Films
  • TiO2 Photocatalysis and Solar Cells
  • Semiconductor materials and devices
  • Quantum Dots Synthesis And Properties
  • Transition Metal Oxide Nanomaterials
  • Inorganic and Organometallic Chemistry
  • Autoimmune Neurological Disorders and Treatments
  • Chemical Synthesis and Reactions
  • Optical Coatings and Gratings
  • Neuroscience and Neural Engineering
  • Ion-surface interactions and analysis
  • Ga2O3 and related materials
  • Analytical Chemistry and Sensors
  • Silicon Nanostructures and Photoluminescence
  • Magnesium Oxide Properties and Applications
  • Drug-Induced Ocular Toxicity
  • Icing and De-icing Technologies
  • Advanced Nanomaterials in Catalysis

Jawaharlal Nehru University
2022-2023

Shiv Nadar University
2014-2022

University of Tennessee Health Science Center
2022

University of Delhi
2021

Inter-University Accelerator Centre
2018-2020

All India Institute of Medical Sciences
2017

Saha Institute of Nuclear Physics
2016

Institute of Physics, Bhubaneshwar
2016

Graphene oxide (GO) is a promising and remarkable nanomaterial that exhibits antimicrobial activity due to its specific surface–interface interactions. In the present work, for first time, we have reported antibacterial of GO-coated surfaces prepared by two different methods (Hummers' improved, i.e., GOH GOI) against bacterial biofilm formation. The toxicity deposited was investigated both Gram-negative (Escherichia coli) Gram-positive (Staphylococcus aureus) models bacteria. mechanism...

10.1021/acsomega.7b00371 article EN publisher-specific-oa ACS Omega 2017-07-03

The work function engineering in metal-oxide nanostructures by judicious doping of impurities is not straightforward as it introduces multiple defects the system. In this regard, understanding nitrogen (N) doping-induced modulation Fermi levels TiO2 nanotubes (TNTs) challenging for visible-range photocatalytic applications. Here, 50 keV N ions are implanted TNTs with a fluence range 1014–1016 ions/cm2. X-ray diffraction and micro-Raman analyses demonstrate formation anatase-TiO2 pristine...

10.1021/acsanm.2c03587 article EN ACS Applied Nano Materials 2023-01-02

Temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an evolution blue emission when exposed to 50 keV Ar+ ions. The origin observed PL has been examined by X-ray absorption near-edge spectroscopy (XANES) at Ti-K,L and O-K edges, revealing the reduction ligand field splitting owing formation oxygen vacancies (OVs) destroying TiO6 octahedral symmetry. Detailed XANES analyses suggest that fluence (ions/cm2) dependent increase in OVs not only boosts conduction electrons...

10.1021/acs.jpcc.7b02218 article EN The Journal of Physical Chemistry C 2017-05-04

Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature are compared with similar pristine-Si (without ripples). It is observed that morphology AZO driven by the underlying substrate morphology. For instance, for substrates, a granular evolves all films. On other hand, morphologies having chain-like arrangement (anisotropic in nature) up to thickness 20 nm, while...

10.1063/1.4930223 article EN Journal of Applied Physics 2015-09-11

Oxygen vacancy (OV) controlled hydrophobicity of self-assembled TiO2 nanorods (NRs) on chemically etched Si pyramids is investigated by irradiating with 50 keV Ar+-ions at room temperature. Apparent contact angle (CA) found to increase from 122° 141° up a fluence 1 × 1015 ions/cm2, followed gradual reduction 130° 1017 ions/cm2. However, the drop in apparent CA be associated decrease fractional surface area via transformation NRs an amorphous layer above though it still higher than that...

10.1021/acs.jpcc.6b08991 article EN The Journal of Physical Chemistry C 2016-12-13

Towards developing next generation scalable TiO2-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar+-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence 5 × 1016 ions/cm2 ambient temperature is presented. Although x-ray diffraction results suggest amorphization as-grown TiO2 layers, detailed transmission electron microscopy study reveals fluence-dependent evolution voids and eventual formation nano-channels between them....

10.1063/1.4936961 article EN Journal of Applied Physics 2015-12-08

Transformation of self-assembled crystalline TiO2 nanorods to amorphous layer, and the corresponding impact on optical-bandgap (Eg) Si pyramids are investigated by irradiating with 50 keV Ar+-ions. Initially, Eg is found be reduced from 3.23 2.94 eV up a fluence 1 × 1016 ions/cm2, discussed in terms rise oxygen vacancies (VO). However, sudden increase 3.38 detected at 1017 ions/cm2 through evolution voids over-saturating VO, manifesting appearance degenerate states shifting Fermi level above...

10.1063/1.4939662 article EN Applied Physics Letters 2016-01-04

Chemically textured Si with improved absorption in the complete range of solar spectrum is investigated by ultraviolet/visible/near-infrared (UV/Vis/NIR) spectroscopy, showing an average specular reflectance ∼0.4% wavelength 500–3000 nm. The pyramidal structures on such solar-blind can reduce further below 0.1% UV region conformal growth granular Al-doped ZnO (AZO) films. X-ray diffraction analyses suggest polycrystalline AZO faceted-Si. Moreover, marginal increase electrical conductivity...

10.1063/1.4896340 article EN Applied Physics Letters 2014-09-22

Herein, a high temperature-induced phase transformation (PT) in chemically grown CdO thin films is demonstrated, and its corresponding electronic origin further investigated by density functional theory. In particular, the cubic rocksalt to hexagonal wurtzite PT film annealed at 900 °C was confirmed X-ray diffraction (XRD), which consistent with high-resolution transmission electron microscopy (TEM) results. Moreover, atomic force scanning clearly evidenced morphological evolution via...

10.1039/c9nr01832h article EN Nanoscale 2019-01-01

The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2−x layers at an ion fluence of 5 × 1016 ions cm−2 is reported. A clear transformation from columnar to layered polycrystalline films revealed by transmission electron microscopy with increasing fluence, while the complementary energy loss spectroscopy suggests evolution oxygen vacancy (OV) matrix. This further verified determining density help x-ray reflectivity. Both local and device current–voltage...

10.1088/1361-6463/aaa559 article EN Journal of Physics D Applied Physics 2018-01-05

The variation of electron density in TiO2−x nanochannels, exhibiting resistive switching phenomenon, produced by Ar+ ion-irradiation at the threshold fluence 5 × 1016 ions/cm2 is demonstrated X-ray reflectivity (XRR). transmission microscopy reveals formation while energy dispersive spectroscopy confirms Ti enrichment near surface due to ion-irradiation, consistent with increase XRR measurements. Such a concentration indicates evolution oxygen vacancies (OVs) along and thus paves way explain...

10.1063/1.4954166 article EN Applied Physics Letters 2016-06-13

Herein, we present the cationic impurity-assisted band offset phenomena in NixCd1-xO (x = 0, 0.02, 0.05, 0.1, 0.2, 0.4, 0.8, and 1) thin films further discuss them based on orbital hybridization modification. The compositional structural studies revealed that substitution of Cd2+ by Ni2+ ions leads to a monotonic shift (220) diffraction peak, indicating suppression lattice distortion, while evolution local strain with an increase Ni concentration is mainly associated mismatch...

10.1039/c9nr05184h article EN Nanoscale 2019-12-12

An annealing temperature-driven appearance of a sharp dual-band edge in the ultraviolet–visible absorption spectrum electrochemically anodized TiO2 nanotubes (TNTs) and corresponding impact on photodegradation organic dyes is reported based evolution an anatase (A)/rutile (R) phase junction. Systematic X-ray diffraction followed by micro-Raman analysis illustrates between 500 900 °C promoting anatase-to-rutile transformation with higher degree crystallinity through intermediate mixed phase....

10.1021/acs.jpcc.0c11081 article EN The Journal of Physical Chemistry C 2021-02-17

Post-deposition annealing mediated evolution of self-decorated Au nanoparticles (NPs) on chemically etched Si pyramids is presented. A distinct transformation surfaces from hydrophilic to hydrophobic initially found after chemical texturing, showing an increase in contact angle (CA) 58° 98° (±1°). Further improvement hydrophobicity with CA up ∼118° has been established a 10 nm thick Au-coated at 400 °C that led the formation NPs facets along self-ordering pyramid edges. Detailed x-ray...

10.1063/1.4945379 article EN Journal of Applied Physics 2016-04-05

Room temperature transformation from anatase (A-TiO2) to rutile (R-TiO2) thin films through an intermediate mixed phase on stainless steel driven by a controlled oxygen flow rate (OFR) is investigated. Such OFR dependent transition confirmed X-ray diffraction and also consistent with absorption spectroscopy at Ti L O K-edges, showing long range ordering in TiO6 octahedral symmetry. photoelectron reveals gradual reduction Ti2O3 and/or TiO phases increasing OFR. Finally, enhanced...

10.1063/1.5040916 article EN Applied Physics Letters 2018-08-20

Nanoscale evidence of self-recovery in resistive switching (RS) behavior was found TiO2−x film by conductive atomic force microscopy when exposed to Ar+-ions above a threshold fluence 1 × 1016 ions cm−2. This revealed an evolution and gradual disappearance bipolar RS-loops, followed reappearance with increasing number voltage sweep. discussed the realm oxygen vacancy (OV) driven formation, dissolution reformation conducting filaments. The presence OVs ion-beam irradiated films evidenced...

10.1088/1361-6463/aa9013 article EN Journal of Physics D Applied Physics 2017-09-29

In the present work, undoped cadmium oxide (CdO)- and 1% Tin (Sn)-doped CdO thin films were prepared by sol–gel route. These samples have been analyzed temperature (T)-dependent (80–500 K) Raman spectroscopy studied for their lattice dynamics vibrational density of states. Results indicate that room T synthesized pure film manifests two prime second order features, is, 300.5 cm–1 transverse optical (TO) 488 longitudinal (LO) phonon modes. However, incorporation cationic-assisted impurity...

10.1021/acs.jpcc.0c06632 article EN The Journal of Physical Chemistry C 2020-09-22

Simultaneous superhydrophobic and visible range antireflective properties are demonstrated in hydrothermally grown ZnO nanorods (NRs) on chemically textured Si surfaces. A drastic transformation of micro-pyramids from hydrophobic to is observed by securing the formation polycrystalline NRs at surfaces, showing an increment apparent contact angle ∼102° ∼157° further explained light a decrease solid fractional surface area, according Cassie-Baxter model. Moreover, wurtzite phase confirmed...

10.1088/2053-1591/ab2f20 article EN Materials Research Express 2019-07-03

Alteration of transport properties any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role controlling resistive switching (RS) performance oxide-based memory devices. Therefore, judicious choice dopants and their atomic concentrations crucial for achieving an optimum Vo configuration. Here, we show that rational designing RS devices with cationic (Ta),...

10.1021/acsami.2c05089 article EN ACS Applied Materials & Interfaces 2022-07-22
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