- Graphene research and applications
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Surface Modification and Superhydrophobicity
- Advancements in Battery Materials
- Shape Memory Alloy Transformations
- Advanced biosensing and bioanalysis techniques
- Quantum Dots Synthesis And Properties
- Thermal Expansion and Ionic Conductivity
- Magnetic and transport properties of perovskites and related materials
- Electrochemical sensors and biosensors
- Graphene and Nanomaterials Applications
- Perovskite Materials and Applications
- Carbon Nanotubes in Composites
- Carbon and Quantum Dots Applications
- 2D Materials and Applications
- Electrochemical Analysis and Applications
- Advanced Memory and Neural Computing
- Advanced Biosensing Techniques and Applications
- Semiconductor materials and devices
- Thermal properties of materials
- Supercapacitor Materials and Fabrication
- Organic Electronics and Photovoltaics
Sungkyunkwan University
2025
Hanyang University
2004-2023
Kyung Hee University
2013-2019
Korea University
2010-2019
Anyang University
2017
Yong In University
2017
Korea University of Science and Technology
2014
Dongguk University
2014
Sejong University
2012
Chosun University
2008
Graphene quantum dots (GQDs) have received much attention due to their novel phenomena of charge transport and light absorption/emission. The optical transitions are known be available up ~6 eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Thus, the demonstration photodetection gain with GQDs would basis a plenty applications not only as single-function device detecting signals but also key component optoelectronic integrated circuits. Here, we firstly report...
All-solid-state Li-rechargeable batteries using a 500 nm-thick LiCoO2 (LCO) film deposited on two NASICON-type solid electrolyte substrates, LICGC (OHARA Inc.) and Li1.3Al0.3Ti1.7(PO4)3 (LATP), are constructed. The postdeposition annealing temperature prior to the cell assembly is critical produce stable sharp LCO/electrolyte interface develop strong crystallographic texture in LCO film, conducive migration of Li ions. Although cells deliver limited discharge capacity, cycled stably for 50...
Porous silicon (PSi) is recognized as an attractive building block for photonic devices because of its novel properties including high ratio surface to volume and light absorption. We first report near-ultraviolet (UV)-sensitive graphene/PSi photodetectors (PDs) fabricated by utilizing graphene PSi a carrier collector photoexcitation layer, respectively. Thanks absorption enlarged energy-band gap PSi, the responsivity (Ri) quantum efficiency (QE) PDs are markedly enhanced in near-UV range....
Boron (B) (1.5 mol %) is introduced into Li[Ni0.95Co0.04Al0.01]O2 (NCA95) to create a radially oriented microstructure with strong crystallographic texture. The cathode allows dissipation of the abrupt lattice strain near charge end and improves cycling stability NCA95 (88% capacity retention after 100 cycles at 0.5 C). Transmission electron microscopy (TEM) analysis B-doped during lithiation reveals that highly provided by hydroxide precursor. prevents random agglomeration primary particles...
Graphene field-effect transistors (GFETs) were fabricated by photolithography and lift-off processes, subsequently heated in a rapid-thermal-annealing (RTA) apparatus at temperatures (TA) from 200 to 400 ° C for 10 min under nitrogen eliminate the residues adsorbed on graphene during GFET fabrication processes. Raman-scattering, current–voltage (I–V), sheet resistance measurements showed that, after annealing 250 C, GFETs regained its intrinsic properties, such as very small intensity ratios...
Formation and characterization of graphene p–n junctions are particular interest because the used in a wide variety electronic/photonic systems as building blocks. Graphene have been previously formed by using several techniques, but most studies based on lateral-type junctions, showing no rectification behaviors. Here, we report new type junction. We first fabricate characterize vertical-type with two terminals. One important characteristics vertical is asymmetric rectifying behavior an...
Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in size of QDs as well doping concentration graphene and consistent with quantum-confinement effect, is remarkably enhanced near-ultraviolet range compared commercially available bulk-Si photodetectors. photoresponse proves be dominated by carriertunneling mechanism.
Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale chemical vapour deposition and NWs are aligned metal-assisted etching of wafer. plays a key role preventing tips vertical from being bundled, thereby making stand on wafer separately each other under graphene, critical structural feature the uniform Schottky-type junction between...
Abstract Förster resonance energy transfer (FRET), referred to as the of photon absorbed in donor acceptor, has received much attention an important physical phenomenon for its potential applications optoelectronic devices well understanding some biological systems. If one-atom-thick graphene is used or it can minimize separation between and thereby maximizing FRET efficiency ( E ). Here, we report first fabrication a system composed silica nanoparticles (SNPs) quantum dots (GQDs) donors...
We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an catalyst. Chemical-vapor-deposition-grown transferred on a substrate is to mesh with nanohole arrays oxygen plasma anodic- aluminum-oxide mask. The prepared mesh/silicon immersed in mixture solution hydrofluoric acid and hydro peroxide various molecular fractions at optimized temperatures. underneath then selectively etched form aligned nanopillar arrays. morphology the nanostructured can...
Abstract The surfaces of commercially available polyester (PET) and polypropylene (PP) are superhydrophobically modified via the deposition polydimethylsiloxane (PDMS)‐coated SiO 2 nanoparticles (P‐SiO ) PDMS binder. adhesion P‐SiO is stronger on PET than PP due to a chemical interaction between PDMS, which attributed higher surface energy PP. waterproof ability oil separation rate ‐coated (dip‐PET) membranes studied as function membrane thickness, influence viscosity efficiency...
Single-layer graphene sheets grown on Cu foils by chemical vapor deposition were transferred 300 nm SiO2/n-type Si wafers and subsequently doped with 10 mM AuCl3 solution. The annealed at various temperatures (TA) under vacuum below 10−3 Torr for min characterized atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), 4-probe van der Pauw method. XPS studies show that the compositions of Cl Au3+ ions in increase slightly annealing 50 °C, but further TA above...
The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance performance graphene/porous Si solar cells.
Single-layer graphene sheets have been synthesized by using chemical vapor deposition, and subsequently doped with AgNO₃ at various doping concentrations (n(D)) from 5 to 50 mM. Atomic force microscopy field emission scanning electron images reveal the formation of ∼10-100 nm Ag particles on surface after doping. The type n is confirmed analyzing n(D)-dependent behaviors Raman scattering work function films. sheet resistance monotonically decreases ∼173 Ω/sq increase n(D) mM, transmittance...